Time dependent dielectric breakdown of amorphous ZrAlxOy high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor

2009 ◽  
Vol 106 (4) ◽  
pp. 044104 ◽  
Author(s):  
Dayu Zhou ◽  
U. Schroeder ◽  
G. Jegert ◽  
M. Kerber ◽  
S. Uppal ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Random Access ◽  
Random Access Memory ◽  
Time Dependent ◽  
Access Memory ◽  
Metal Insulator ◽  
Time Dependent Dielectric Breakdown ◽  
High K ◽  
Metal Insulator Metal ◽  
High K Dielectric

(Invited) Metal-Insulator-Metal Devices with High-K Dielectric for Nonvolatile or Dynamic Random Access Memories

2015 ◽  
Vol 67 (1) ◽  
pp. 99-110 ◽  
Author(s):  
A. Bsiesy ◽  
P. Gonon ◽  
C. Vallee ◽  
J. Pointet ◽  
C. Mannequin
Keyword(s):  
Random Access ◽  
Metal Insulator ◽  
High K ◽  
Metal Insulator Metal ◽  
High K Dielectric

TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

2011 ◽  
Vol 109 (3) ◽  
pp. 033712 ◽  
Author(s):  
Jungho Shin ◽  
Insung Kim ◽  
Kuyyadi P. Biju ◽  
Minseok Jo ◽  
Jubong Park ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Cross Point ◽  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Peculiarities of time-dependent-dielectric breakdown characteristics of pure and doped Ta2O5 stacks

2013 ◽  
Vol 26 (3) ◽  
pp. 281-296
Author(s):  
E. Atanassova ◽  
A. Paskaleva
Keyword(s):  
Dielectric Breakdown ◽  
Interface Layer ◽  
Time Dependent ◽  
Relative Impact ◽  
Time Dependent Dielectric Breakdown ◽  
Breakdown Mechanism ◽  
Number Of Factors ◽  
High K ◽  
Induced Defects

The effect of both the process-induced defects and the dopant on the time-dependent-dielectric breakdown in Ta2O5 stacks is discussed. The breakdown degradation is analyzed in terms of specific properties of high-k stacks which make their dielectric breakdown mechanism completely different from that of classical SiO2. The relative impact of a number of factors constituting the reliability issues in Ta2O5-based capacitors (trapping in pre-existing traps, stress-induced new traps generation, the presence of interface layer at Si and the role of the dopant) is clarified.

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