Photoinduced behavior of the VCCSi− pair defect in 4H-SiC grown by physical vapor transport and halide chemical vapor deposition

2009 ◽  
Vol 106 (6) ◽  
pp. 064908
Author(s):  
M. E. Zvanut ◽  
G. Ngetich ◽  
J. Dashdorj ◽  
N. Y. Garces ◽  
E. R. Glaser
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Pair Defect

Characterization of Semi-insulating SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Nguyen Tien Son ◽  
Patrick Carlsson ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Vapor Deposition ◽  
Thermal Activation ◽  
Deep Level ◽  
Chemical Vapor ◽  
Activation Energies ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

AbstractElectron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping

2017 ◽  
Vol 897 ◽  
pp. 3-6 ◽  
Author(s):  
Hiromasa Suo ◽  
Kazuma Eto ◽  
Tomohisa Kato ◽  
Kazutoshi Kojima ◽  
Hiroshi Osawa ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray ◽  
Co Doping ◽  
Bulk Growth ◽  
Dislocation Densities ◽  
Growth Method ◽  
Co Doped

The growth of n-type 4H-SiC crystal was performed by physical vapor transport (PVT) growth method by using nitrogen and aluminum (N-Al) co-doping. Resistivity of N-Al co-doped 4H-SiC was as low as 5.8 mΩcm. The dislocation densities of N-Al co-doped substrates were evaluated by synchrotron radiation X-ray topography (SXRT). In addition, epitaxial growth was performed on the N-Al co-doped substrates by chemical vapor deposition (CVD). No double Shockley type stacking fault was observed in the epitaxial layer.

Structural analysis of silicon carbon nitride films prepared by vapor transport-chemical vapor deposition

2010 ◽  
Vol 107 (3) ◽  
pp. 033517 ◽  
Author(s):  
Y. Awad ◽  
M. A. El Khakani ◽  
M. Scarlete ◽  
C. Aktik ◽  
R. Smirani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Analysis ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride

Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling

2008 ◽  
Vol 600-603 ◽  
pp. 83-88
Author(s):  
Michel Pons ◽  
Shin Ichi Nishizawa ◽  
Peter J. Wellmann ◽  
Elisabeth Blanquet ◽  
Didier Chaussende ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Process Equipment ◽  
Physical Vapor Transport ◽  
Growth Technique ◽  
As Doping ◽  
Bulk Growth ◽  
New Process

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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