Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping

2017 ◽  
Vol 897 ◽  
pp. 3-6 ◽  
Author(s):  
Hiromasa Suo ◽  
Kazuma Eto ◽  
Tomohisa Kato ◽  
Kazutoshi Kojima ◽  
Hiroshi Osawa ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray ◽  
Co Doping ◽  
Bulk Growth ◽  
Dislocation Densities ◽  
Growth Method ◽  
Co Doped

The growth of n-type 4H-SiC crystal was performed by physical vapor transport (PVT) growth method by using nitrogen and aluminum (N-Al) co-doping. Resistivity of N-Al co-doped 4H-SiC was as low as 5.8 mΩcm. The dislocation densities of N-Al co-doped substrates were evaluated by synchrotron radiation X-ray topography (SXRT). In addition, epitaxial growth was performed on the N-Al co-doped substrates by chemical vapor deposition (CVD). No double Shockley type stacking fault was observed in the epitaxial layer.

Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling

2008 ◽  
Vol 600-603 ◽  
pp. 83-88
Author(s):  
Michel Pons ◽  
Shin Ichi Nishizawa ◽  
Peter J. Wellmann ◽  
Elisabeth Blanquet ◽  
Didier Chaussende ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Process Equipment ◽  
Physical Vapor Transport ◽  
Growth Technique ◽  
As Doping ◽  
Bulk Growth ◽  
New Process

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.

Characterization of Semi-insulating SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Nguyen Tien Son ◽  
Patrick Carlsson ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Vapor Deposition ◽  
Thermal Activation ◽  
Deep Level ◽  
Chemical Vapor ◽  
Activation Energies ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

AbstractElectron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

2018 ◽  
Vol 924 ◽  
pp. 15-18
Author(s):  
Masashi Sonoda ◽  
Kentaro Shioura ◽  
Takahiro Nakano ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Morphology ◽  
Defect Structure ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

Preparation of Visible-Light-Responsive Nitrogen-carbon Co-doped Titania by Chemical Vapor Deposition

2010 ◽  
Vol 224 (06) ◽  
pp. 843-856 ◽  
Author(s):  
Yao-Hsuan Tseng ◽  
Chien-Sheng Kuo ◽  
Chia-Hung Huang ◽  
Yuan-Yao Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Visible Light ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Doped Titania ◽  
Co Doped

AbstractNitrogen-doped titania (N-doped TiO2) and nitrogen-carbon co-doped titania (N-C-doped TiO2) were prepared in metal-organic chemical vapor deposition (MOCVD) processes under the controlled reaction atmosphere. The N-doped TiO2 and N-C-doped TiO2 with anatase phase were prepared at 600Â oC under N2-O2-NH3 and N2-NH3 atmospheres respectively. The N-C-doped TiO2 exhibited the high photocatalytic activity for the oxidation of NO under visible-light illuminations. The chamber atmosphere in the MOCVD process plays an important role on the surface lattice structure and nitrogen and carbon content of TiO2. The nitrogen and carbonaceous species on the TiO2 surface, evidenced from X-ray diffractometry (XRD), UV-VIS, and Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS), were inferred as important factors for narrowing band gap of titania and enhancement of its visible-light-responsive activity.

New Electroluminescence Spectrum from Co-doped ZnS:(Mn, Si) Films Prepared by Chemical Vapor Deposition with Laser Ablation

2004 ◽  
Vol 829 ◽  
Author(s):  
Makoto Ozawa ◽  
Tomomasa Satoh ◽  
Takashi Hirate
Keyword(s):  
Chemical Vapor Deposition ◽  
Laser Ablation ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Emission Peak ◽  
Electroluminescence Spectrum ◽  
Co Doping ◽  
Si Films ◽  
Co Doped

ABSTRACTCo-doped ZnS:(Mn, Si) films were fabricated. The ZnS was synthesized by a low-pressure thermal chemical vapor deposition. Metal Zn vapor and H2S gas were used as the CVD-precursors. Mn and Si were doped using a laser ablation technique during the ZnS growth. A solid MnSi alloy (Mn:Si = 1:1) was used as the laser ablation target. The films were deposited at the range from 650°C to 750°C. At the deposition temperature of 650°C, only a EL emission peak at 585 nm same as conventional ZnS:Mn films appeared, i.e., the Si co-doping had no effects on the EL spectrum. At the deposition temperature of 700°C, the Si co-doping to ZnS:Mn film caused the shift of the EL emission peak at 585 nm to shorter wavelength by 15 nm and provided new EL emission at 760 nm. The film deposited at 750°C exhibited new UV and blue EL emissions at 390 nm and 450 nm, respectively, although the host material of the film differed from usual ZnS.

High-Quality AlGaN/GaN HFET Structures Grown by MOCVD Using Intermediate High Temperature AlGaN/GaN Superlattices

2002 ◽  
Vol 743 ◽  
Author(s):  
Alexander Demchuk ◽  
Don Olson ◽  
Minseub Shin ◽  
Dan Olson ◽  
Peter Nussbaum ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
High Quality ◽  
X Ray ◽  
Dislocation Densities ◽  
Afm Analysis ◽  
Gan Hfet ◽  
Van Der Pauw

ABSTRACTWe report on device quality Al0.28Ga0.72N/GaN heterostructures growth by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using intermediate AlxGa1-xN/GaN superlattices (SL) with x<0.15. High-quality Al0.28Ga0.72N/GaN heterostructures have been confirmed with HRXRD analysis by measurement of mosaic twist and tilt in growth films, SEM with selective etching and Van der Pauw Hall measurements. The edge and threading dislocations were efficiently filtered by the AlGaN/GaN SL resulting in further reduction dislocation densities at the channel. Additionally, the superlattice served to improve the planarity of the channel heterointerface as evidenced by x-ray and AFM analysis. The increase of 2-DEG mobility from ∼1187 cm2/V s to ∼1443 cm2/V s was obtained at the carrier density of 1.0 to 1.2×1013 cm−2 on heterostructures with intermediate AlGaN/GaN SL grown on sapphire.

Characterization ofa‐SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x‐ray mask application

1992 ◽  
Vol 72 (7) ◽  
pp. 3110-3115 ◽  
Author(s):  
A. Jean ◽  
M. Chaker ◽  
Y. Diawara ◽  
P. K. Leung ◽  
E. Gat ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray
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