Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling

2008 ◽  
Vol 600-603 ◽  
pp. 83-88
Author(s):  
Michel Pons ◽  
Shin Ichi Nishizawa ◽  
Peter J. Wellmann ◽  
Elisabeth Blanquet ◽  
Didier Chaussende ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Process Equipment ◽  
Physical Vapor Transport ◽  
Growth Technique ◽  
As Doping ◽  
Bulk Growth ◽  
New Process

Modeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD), are sufficiently mature to help building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions.

Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping

2017 ◽  
Vol 897 ◽  
pp. 3-6 ◽  
Author(s):  
Hiromasa Suo ◽  
Kazuma Eto ◽  
Tomohisa Kato ◽  
Kazutoshi Kojima ◽  
Hiroshi Osawa ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray ◽  
Co Doping ◽  
Bulk Growth ◽  
Dislocation Densities ◽  
Growth Method ◽  
Co Doped

The growth of n-type 4H-SiC crystal was performed by physical vapor transport (PVT) growth method by using nitrogen and aluminum (N-Al) co-doping. Resistivity of N-Al co-doped 4H-SiC was as low as 5.8 mΩcm. The dislocation densities of N-Al co-doped substrates were evaluated by synchrotron radiation X-ray topography (SXRT). In addition, epitaxial growth was performed on the N-Al co-doped substrates by chemical vapor deposition (CVD). No double Shockley type stacking fault was observed in the epitaxial layer.

Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling

2006 ◽  
Vol 911 ◽  
Author(s):  
Michel Pons ◽  
Shin-Ichi Nishizawa ◽  
Peter Wellmann ◽  
Elisabeth Blanquet ◽  
Didier Chaussende ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Design Tool ◽  
Fine Tuning ◽  
Process Equipment ◽  
Growth Machine ◽  
Training Tool ◽  
As Doping ◽  
Bulk Growth ◽  
Hybrid Techniques

AbstractModeling and simulation of the SiC growth processes, Physical Vapor Transport (PVT), Chemical Vapor Deposition (CVD) and hybrid techniques, are sufficiently mature to be used as a training tool for engineers as well as a growth machine design tool, e.g. when building new process equipment or up-scaling old ones. It is possible (i) to simulate accurately temperature and deposition distributions, as well as doping (ii) to quantify the limiting phenomena, (iii) to understand the important role of different precursors in CVD and hydrogen additions in PVT. The first conclusion of this paper is the importance of the "effective" C/Si ratio during CVD epitaxy in hot-wall reactors and its capability to explain the doping concentrations. The second conclusion is the influence of the C/Si ratio in alternative bulk growth technique involving gas additions. Preliminary results show that fine tuning of H2 or precursor additions allow a better control of concentrations of residual and intentional doping.

Characterization of Semi-insulating SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Nguyen Tien Son ◽  
Patrick Carlsson ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Vapor Deposition ◽  
Thermal Activation ◽  
Deep Level ◽  
Chemical Vapor ◽  
Activation Energies ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

AbstractElectron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

Study of the Role of Small Additions of Zr in the CVD- FBR Aluminization Process

2009 ◽  
Vol 289-292 ◽  
pp. 293-300
Author(s):  
L. Sánchez ◽  
F.J. Bolívar ◽  
M.P. Hierro ◽  
F.J. Pérez
Keyword(s):  
Fluidized Bed ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fluidized Bed Reactor ◽  
Iron Aluminide ◽  
Martensitic Steels ◽  
Aluminide Coatings ◽  
Deposition Parameters ◽  
Zirconium Powder

In this work, iron aluminide coatings were developed by Chemical Vapor Deposition in Fluidized Bed Reactor (CVD-FBR) on ferritic-martensitic steels. Small additions of zirconium powder were introduced in the fluidized bed; as a consequence, the obtained coatings are thicker than that without zirconium additions. When Zr powders are added in the fluidized bed, the deposition atmosphere drastically changes, leading to increase the deposition rate. Thermodynamic calculations were carried out to simulate the modifications in the CVD atmosphere in the Al/Zr deposition system in comparison to the single aluminization. In order to optimize the conditions of the deposition, parameters such as temperature and concentration of zirconium introduced into the bed were evaluated and compared with the results obtained for the single aluminum deposition.

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions

2005 ◽  
Vol 483-485 ◽  
pp. 25-30 ◽  
Author(s):  
Peter J. Wellmann ◽  
Thomas L. Straubinger ◽  
Patrick Desperrier ◽  
Ralf Müller ◽  
Ulrike Künecke ◽  
...  
Keyword(s):  
Temperature Field ◽  
Phase Composition ◽  
Gas Phase ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Process Conditions ◽  
Growth Technique ◽  
Experimental Implementation ◽  
P Type

We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the MPVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9⋅1019cm-3 and ρ<0.2Ωcm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8⋅1017cm-3.

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