Detection of percolating paths in polyhedral segregated network composites using electrostatic force microscopy and conductive atomic force microscopy

Recently, there have been a number of variations of electrostatic force microscopy (EFM) that allow for the measurement of time-varying forces arising from phenomena such as ion transport in battery materials or charge separation in photovoltaic systems. These forces reveal information about dynamic processes happening over nanometer length scales due to the nanometer-sized probe tips used in atomic force microscopy. Here, we review in detail several time-resolved EFM techniques based on non-contact atomic force microscopy, elaborating on their specific limitations and challenges. We also introduce a new experimental technique that can resolve time-varying signals well below the oscillation period of the cantilever and compare and contrast it with those previously established.

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Nanostructured Thermoset Composites Containing Conductive TiO2 Nanoparticles

Materials Science Forum ◽

10.4028/www.scientific.net/msf.714.147 ◽

2012 ◽

Vol 714 ◽

pp. 147-152 ◽

Cited By ~ 1

Author(s):

Junkal Gutierrez ◽

Agnieszka Tercjak ◽

Iñaki Mondragon

Keyword(s):

Atomic Force Microscopy ◽

Optical Properties ◽

Block Copolymer ◽

Electrostatic Force ◽

Sol Gel ◽

Electrostatic Force Microscopy ◽

Force Microscopy ◽

Thermoset Composites ◽

Atomic Force ◽

Conductive Properties

Novel transparent multiphase nanostructured thermosetting composites with different block copolymer and sol-gel contents have been developed. Morphology of designed systems has been investigated by atomic force microscopy (AFM). Electrostatic force microscopy (EFM) has been used in order to study the conductive properties of prepared hybrid inorganic/organic nanostructured thermosetting systems. Moreover taking into account the optical properties of TiO2 nanoparticles UV-vis measurements indicate that TiO2 nanoparticles clearly enhance the UV-shielding efficiency of the inorganic/organic nanostructured thermosetting systems without losing high-visible light transparency.

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High-aspect ratio metal tips attached to atomic force microscopy cantilevers with controlled angle, length, and radius for electrostatic force microscopy

Review of Scientific Instruments ◽

10.1063/1.2805513 ◽

2007 ◽

Vol 78 (11) ◽

pp. 113706 ◽

Cited By ~ 10

Author(s):

Lynda Cockins ◽

Yoichi Miyahara ◽

Romain Stomp ◽

Peter Grutter

Keyword(s):

Atomic Force Microscopy ◽

Aspect Ratio ◽

High Aspect Ratio ◽

Electrostatic Force ◽

Electrostatic Force Microscopy ◽

Force Microscopy ◽

Atomic Force

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Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0606 ◽

2017 ◽

Author(s):

Lucile C. Teague Sheridan ◽

Linda Conohan ◽

Chong Khiam Oh

Keyword(s):

Atomic Force Microscopy ◽

Cmos Technology ◽

Fault Isolation ◽

Contrast Imaging ◽

Conductive Atomic Force Microscopy ◽

Isolation Technique ◽

Conductive Afm ◽

Force Microscopy ◽

Atomic Force ◽

Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

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Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2003p0413 ◽

2003 ◽

Author(s):

Jon C. Lee ◽

J. H. Chuang

Keyword(s):

Atomic Force Microscopy ◽

Integrated Circuits ◽

Fault Localization ◽

Electrical Characterization ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force ◽

Optical Electron ◽

Defect Isolation ◽

Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

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