Enhancement in ion beam current with layered-glows in a constricted dc plasma ion source

In s.i.m.s. the sample surface is ion bombarded and the emitted secondary ions are mass analysed. When used in the static mode with very low primary ion beam current densities (10 -11 A/mm 2 ), the technique analyses the outermost atomic layers with the following advantages (Benninghoven 1973, I975): the structural—chemical nature of the surface may be deduced from the masses of the ejected ionized clusters of atoms; detection of hydrogen and its compounds is possible; sensitivity is extremely high (10 -6 monolayer) for a number of elements. Composition profiles are obtained by increasing the primary beam current density (dynamic mode) or by combining the technique in the static mode with ion beam machining with a separate, more powerful ion source. The application of static s.i.m.s. in metallurgy has been explored by analysing a variety of alloy surfaces after fabrication procedures in relation to surface quality and subsequent performance. In a copper—silver eutectic alloy braze it was found that the composition of the solid surface depended markedly on its pretreatment. Generally there was a surface enrichment of copper relative to silver in melting processes while sawing and polishing enriched the surface in silver

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SPES: EXOTIC BEAMS FOR NUCLEAR PHYSICS STUDIES

International Journal of Modern Physics Conference Series ◽

10.1142/s2010194514601458 ◽

2014 ◽

Vol 27 ◽

pp. 1460145 ◽

Cited By ~ 1

Author(s):

ALBERTO ANDRIGHETTO ◽

MATTIA MANZOLARO ◽

STEFANO CORRADETTI ◽

DANIELE SCARPA ◽

JESU VASQUEZ ◽

...

Keyword(s):

Nuclear Physics ◽

Ion Beam ◽

Ion Source ◽

Beam Power ◽

Critical Element ◽

Laser Ion Source ◽

The Status ◽

Direct Target ◽

Neutron Rich Isotopes ◽

Plasma Ion Source

The SPES project at Laboratori di Legnaro of INFN (Italy) is concentrating on the production of neutron-rich radioactive nuclei for nuclear physics experiments using uranium fission at a rate of 1013 fission/s. The emphasis on neutron-rich isotopes is justified by the fact that this vast territory has been little explored. The Radioactive Ion Beam (RIB) will be produced by the ISOL technique using proton induced fission on a direct target of UCx. The most critical element of the SPES project is the Multi-Foil Direct Target. Up to the present time, the proposed target represents an innovation in terms of its capability to sustain the primary beam power. This talk will present the status of the project financed by INFN, which is actually in the construction phase at Legnaro. In particular, developments related to the target and the ion-source activities using the surface ion source, plasma ion source, and laser ion source techniques will be reported.

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Characterization of plasma ion source utilizing anode spot with positively biased electrode for stable and high-current ion beam extraction

Review of Scientific Instruments ◽

10.1063/1.3664616 ◽

2011 ◽

Vol 82 (12) ◽

pp. 123303 ◽

Cited By ~ 8

Author(s):

Yeong-Shin Park ◽

Yuna Lee ◽

Kyoung-Jae Chung ◽

Y. S. Hwang

Keyword(s):

Ion Beam ◽

Ion Source ◽

Beam Extraction ◽

High Current ◽

Anode Spot ◽

Plasma Ion Source

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Beam emittance measurements of transformer coupled plasma ion source for focused ion beam

Review of Scientific Instruments ◽

10.1063/1.1702124 ◽

2004 ◽

Vol 75 (5) ◽

pp. 1681-1683 ◽

Cited By ~ 4

Author(s):

Yoon Jae Kim ◽

I. S. Hong ◽

H. S. Kim ◽

Y. S. Hwang

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Ion Source ◽

Beam Emittance ◽

Plasma Ion Source

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Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification

Revue de Physique Appliquée ◽

10.1051/rphysap:01989002403029500 ◽

1989 ◽

Vol 24 (3) ◽

pp. 295-308 ◽

Cited By ~ 6

Author(s):

C. Lejeune ◽

J.P. Grandchamp ◽

J.P. Gilles ◽

E. Collard ◽

P. Scheiblin

Keyword(s):

Surface Modification ◽

Ion Beam ◽

Ion Source ◽

Ion Beam Etching ◽

Plasma Ion Source ◽

Reactive Ion Beam Etching

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Development of a pulsed ion-beam system with laser-plasma ion source.

Ion Implantation Technology–92 ◽

10.1016/b978-0-444-89994-1.50112-5 ◽

1993 ◽

pp. 511-515

Author(s):

V.V. Simonov ◽

A.I. Holopkin ◽

B.N. Mashcovtsev

Keyword(s):

Laser Plasma ◽

Ion Beam ◽

Ion Source ◽

Beam System ◽

Plasma Ion Source

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Developing Ultra Small-Scale Radiocarbon Sample Measurement at the University of Tokyo

Radiocarbon ◽

10.1017/s0033822200045355 ◽

2010 ◽

Vol 52 (2) ◽

pp. 310-318 ◽

Cited By ~ 55

Author(s):

Yusuke Yokoyama ◽

Mamito Koizumi ◽

Hiroyuki Matsuzaki ◽

Yosuke Miyairi ◽

Naohiko Ohkouchi

Keyword(s):

Ion Beam ◽

Measurement Techniques ◽

Beam Current ◽

Ion Source ◽

Small Samples ◽

Small Scale ◽

Target Holder ◽

Vacuum Line ◽

The Difference ◽

Beam Currents

We have developed accelerator mass spectrometry (AMS) measurement techniques for ultra small-size samples ranging from 0.01 to 0.10 mg C with a new type of MC-SNICS ion source system. We can generate 4 times higher ion beam current intensity for ultra-small samples by optimization of graphite position in the target holder with the new ionizer geometry. CO2 gas graphitized in the newly developed vacuum line is pressed to a depth of 1.5 mm from the front of the target holder. This is much deeper than the previous position at 0.35 mm depth. We measured 12C4+ beam currents generated by small standards and ion beam currents (15–30 μA) from the targets in optimized position, lasting 20 min for 0.01 mg C and 65 min for 0.10 mg C. We observed that the measured 14C/12C ratios are unaffected by the difference of ion beam currents ranging from 5 to 30 μA, enabling measurement of ultra-small samples with high precision. Examination of the background samples revealed 1.1 μg of modern and 1 μg of dead carbon contaminations during target graphite preparation. We make corrections for the contamination from both the modern and background components. Reduction of the contamination is necessary for conducting more accurate measurement.

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FABRICATION AND MODELING OF MICROCHANNEL MILLING USING FOCUSED ION BEAM

International Journal of Nanoscience ◽

10.1142/s0219581x03001425 ◽

2003 ◽

Vol 02 (04n05) ◽

pp. 375-379 ◽

Cited By ~ 5

Author(s):

A. A. TSENG ◽

B. LEELADHARAN ◽

B. LI ◽

I. INSUA ◽

C. D. CHEN

Keyword(s):

Numerical Model ◽

Silicon Wafer ◽

Focused Ion Beam ◽

Ion Beam ◽

Beam Current ◽

Ion Source ◽

Experimental Measurements ◽

Model Predictions

The capability of using Focused Ion Beam (FIB) for milling microchannels is experimentally and theoretically investigated. Microchannel structures are fabricated by a NanoFab 150 FIB machine, using an Arsenic (As2+) ion source. A beam current of 5 pA at 90 keV accelerating energy is used. Several microchannel patternings are milled at various dwell times at pixel spacing of 14.5 nm on top of a 60 nm gold-coated silicon wafer. An analytical/numerical model is developed to predict the FIB milling behavior. By comparing with the experimental measurements, the model predictions have been demonstrated to be reliable for guiding and controlling the milling processes.

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