Spectroscopic ellipsometry and x‐ray photoelectron spectroscopy studies of the annealing behavior of amorphous Si produced by Si ion implantation

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

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X-ray photoelectron spectroscopy studies of Fe3O4 films on Si and MgO substrates grown by pulsed laser deposition

10.1063/1.5028880 ◽

2018 ◽

Author(s):

Inderpal Singh ◽

Sunil K. Arora ◽

M. G. Moinuddin ◽

R. J. Choudhary

Keyword(s):

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Laser Deposition ◽

X Ray ◽

Spectroscopy Studies

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Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

MRS Proceedings ◽

10.1557/proc-262-1079 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 7

Author(s):

D. Y. C. Lie ◽

A. Vantomme ◽

F. Eisen ◽

M. -A. Nicolet ◽

V. Arbet-Engels ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystals ◽

Room Temperature ◽

Defect Concentration ◽

Double Crystal ◽

X Ray ◽

Positive Strain ◽

Independent Coefficient ◽

The Relationship ◽

Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

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X-ray photoelectron spectroscopy studies of laterite standard reference material

Journal of Molecular Catalysis A Chemical ◽

10.1016/j.molcata.2004.09.040 ◽

2005 ◽

Vol 228 (1-2) ◽

pp. 151-162 ◽

Cited By ~ 16

Author(s):

J. Mendialdua ◽

R. Casanova ◽

F. Rueda ◽

A. Rodríguez ◽

J. Quiñones ◽

...

Keyword(s):

Reference Material ◽

Standard Reference Material ◽

Photoelectron Spectroscopy ◽

X Ray ◽

Spectroscopy Studies

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Термодинамические свойства оксипентафторида ванадия (IV), (NH-=SUB=-4-=/SUB=-)-=SUB=-3-=/SUB=-VOF-=SUB=-5-=/SUB=-

Физика твердого тела ◽

10.21883/ftt.2020.07.49485.008 ◽

2020 ◽

Vol 62 (7) ◽

pp. 1123

Author(s):

Е.В. Богданов ◽

Е.И. Погорельцев ◽

А.В. Карташев ◽

М.В. Горев ◽

М.С. Молокеев ◽

...

Keyword(s):

Phase Transitions ◽

Photoelectron Spectroscopy ◽

Single Phase ◽

Dielectric Studies ◽

X Ray Diffraction ◽

X Ray ◽

Limits Of Stability ◽

Three Phase ◽

Temperature Dependences ◽

Spectroscopy Studies

Abstract The (NH_4)_3VOF_5 crystals have been synthesized and their homogeneity and single-phase structure has been established by the X-ray diffraction, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy studies. The investigations of the temperature dependences of specific heat, entropy, strain, and pressure susceptibility show the occurrence of three phase transitions caused by the structural transformations in the (NH_4)_3VOF_5 crystals. The T – p phase diagram shows the temperature limits of stability of the crystalline phases implemented in (NH_4)_3VOF_5. The optical and dielectric studies disclose the ferroelastic nature of the phase transitions. An analysis of the experimental data together with the data on the isostructural (NH_4)_3VO_2F_4 crystal makes it possible to distinguish the physical properties of oxyfluorides containing vanadium of different valences (IV and V).

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