High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy

2008 ◽  
Vol 1068 ◽  
Author(s):  
Agam Prakash Vajpeyi ◽  
G. Tsiakatouras ◽  
A Adikimenakis ◽  
K. Tsagaraki ◽  
M Androulidaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
High Surface ◽  
Thermal Strain ◽  
Average Diameter ◽  
Optical Quality ◽  
Average Height ◽  
High Optical Quality ◽  
Mismatch Strain

ABSTRACTThe spontaneous growth of GaN nanopillars on (111) Si by plasma assisted molecular beam epitaxy has been investigated. The growth of GaN nanopillars on Si is driven by the lattice mismatch strain energy on Si and the high surface energy of the nitrogen stabilized (0001) GaN surface. A higher growth rate of nanopillars compared to a compact GaN film suggests the diffusion of Ga atoms from the uncovered substrate areas to the nucleated GaN nanopillars. The GaN nanopillars were characterized by field-emission scanning electron microscopy (FE-SEM), photoluminescence, and micro Raman spectroscopy. SEM image revealed that average diameter of GaN nanopillars was in the range of 70-100nm and an average height of 600nm. The photoluminescence (PL) spectra indicate the good emission property of the nanopillars. The low temperate PL spectrum exhibited an emission peak at 3.428eV besides a sharp excitonic peak. PL and Raman spectra indicate that GaN nanopillars are fully relaxed from lattice and thermal strain.

Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates

2008 ◽  
Vol 1 ◽  
pp. 091202 ◽  
Author(s):  
Yoshio Nishimoto ◽  
Ken Nakahara ◽  
Daiju Takamizu ◽  
Atsushi Sasaki ◽  
Kentaro Tamura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
High Optical Quality

scholarly journals GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Andrea Ballabio ◽  
Sergio Bietti ◽  
Andrea Scaccabarozzi ◽  
Luca Esposito ◽  
Stefano Vichi ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Thermal Strain ◽  
Gaas Layer ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Phase Boundaries ◽  
High Optical Quality ◽  
Quantum Well Structures ◽  
Si Substrates

AbstractWe demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

Extremely uniform GaAs-AlGaAs heterostructure layers with high optical quality by molecular beam epitaxy

1983 ◽  
Vol 61 (2) ◽  
pp. 393-396 ◽  
Author(s):  
T. Fujii ◽  
S. Hiyamizu ◽  
O. Wada ◽  
T. Sugahara ◽  
S. Yamakoshi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
High Optical Quality

Optical and electrical properties of semi-insulating GaN:C grown by MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
R. Armitage ◽  
Qing Yang ◽  
H. Feick ◽  
S. Y. Tzeng ◽  
J. Lim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Transport Model ◽  
Growth Conditions ◽  
Optical Quality ◽  
Optical And Electrical Properties ◽  
High Optical Quality ◽  
Pair Defect ◽  
Additional Support

ABSTRACTSemi-insulating wurtzite GaN:C of high optical quality is obtained with CCl4or CS2 doping sources in plasma-assisted molecular-beam epitaxy in Ga-rich growth conditions. The highest resistivity (107Ω-cm) is found for [C] in the low 1018cm−3range. An increasing fraction of carbon appears to form electrically inactive pair defects for higher doping levels causing the concentration of uncompensated residual donors to be higher in films with [C] in the 1019cm−3range compared with [C] in the 1018cm−3range. Blue (2.9 eV) and yellow (2.2 eV) luminescence bands are associated with carbon-related defects, and additional support is provided for the association of the blue luminescence with the carbon-acceptor deactivating pair defect. Finally, the temperature dependence of the resistivity is described within the grain-boundary controlled transport model of Salzmanet al., Appl. Phys. Lett.76, 1431 (2000).

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy

1987 ◽  
Vol 50 (1) ◽  
pp. 37-39 ◽  
Author(s):  
K. Mohammed ◽  
D. A. Cammack ◽  
R. Dalby ◽  
P. Newbury ◽  
B. L. Greenberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch
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