Characteristics of silicon nitride deposited by plasma‐enhanced chemical vapor deposition using a dual frequency radio‐frequency source

1992 ◽  
Vol 71 (4) ◽  
pp. 1838-1841 ◽  
Author(s):  
C. W. Pearce ◽  
R. F. Fetcho ◽  
M. D. Gross ◽  
R. F. Koefer ◽  
R. A. Pudliner
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Radio Frequency ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dual Frequency ◽  
Frequency Source

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Synthesis of carbon nanosheets by inductively coupled radio-frequency plasma enhanced chemical vapor deposition

Carbon ◽  
2004 ◽  
Vol 42 (14) ◽  
pp. 2867-2872 ◽  
Author(s):  
Jianjun Wang ◽  
Mingyao Zhu ◽  
Ron A. Outlaw ◽  
Xin Zhao ◽  
Dennis M. Manos ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Radio Frequency ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Radio Frequency Plasma ◽  
Carbon Nanosheets ◽  
Inductively Coupled ◽  
Frequency Plasma
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