scholarly journals Contamination Particle Behavior of Aerosol Deposited Y2O3 and YF3 Coatings under NF3 Plasma

Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 310 ◽  
Author(s):  
Je-Boem Song ◽  
Eunmi Choi ◽  
Seong-Geun Oh ◽  
Jin-Tae Kim ◽  
Ju-Young Yun
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Protective Coatings ◽  
Etching Rate ◽  
Physical Damage ◽  
Plasma Damage ◽  
Coating Materials ◽  
Zero Bias ◽  
Aerosol Deposition Method ◽  
Y2o3 Coating

The internal coatings of chambers exposed to plasma over a long period of time are subject to chemical and physical damage. Contamination particles that are produced by plasma damage to coatings are a major contribution to poor process reliability. In this study, we investigated the behavior of contamination particles produced from plasma damage to Y2O3 and YF3 protective coatings, which were applied by an aerosol deposition method. The coating materials were located at the powered electrode, the grounded electrode, and the grounded wall, which were exposed to a NF3 plasma. The mass loss at the powered electrode, which was exposed to the NF3 plasma etching under an applied bias, showed that the YF3 etching rate was higher than that of Y2O3. Conversely, the mass of coating increased at the grounded electrode and the grounded wall, which were exposed to NF3 plasma etching under zero bias. The mass of the Y2O3 coating increased more than that of the YF3 coating. X-ray photoelectron spectroscopy analysis showed that the Y2O3 coating corroded to YOxFy in the NF3 plasma, and YF3 existed as YFx. Light scattering sensor analysis showed that the YF3 coating produced fewer contamination particles than did the Y2O3 coating.

scholarly journals Contamination Particles and Plasma Etching Behavior of Atmospheric Plasma Sprayed Y2O3 and YF3 Coatings under NF3 Plasma

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 102 ◽  
Author(s):  
Je-Boem Song ◽  
Jin-Tae Kim ◽  
Seong-Geun Oh ◽  
Ju-Young Yun
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Protective Coatings ◽  
Etching Rate ◽  
Atmospheric Plasma ◽  
Transmission Electron ◽  
Transmission Electron Microscope Analysis ◽  
Electron Microscope Analysis ◽  
Plasma Sprayed

Yttrium oxide (Y2O3) and yttrium oxyfluoride (YO0.6F2.1) protective coatings were prepared by an atmospheric plasma spraying technique. The coatings were exposed to a NF3 plasma. After the NF3 plasma treatment, the mass loss of the coatings showed that the etching rate of YO0.6F2.1 was larger than that of the Y2O3. X-ray photoelectron spectroscopy revealed that YO0.5F1.9 was present in the Y2O3 coating, whereas YO0.4F2.2 was present in the YO0.6F2.1 coating. Transmission electron microscope analysis conducted on contamination particles generated during the plasma etching showed that both coatings were mainly composed of YFx. The contamination particles estimated by in-situ particle monitoring sensor revealed that the YO0.6F2.1 compared with the Y2O3 coatings produced 65% fewer contamination particles.

Chemical Topography of Si Etching in a Cl2 Plasma, Studied by X-RAY Photoelectron Spectroscopy and Laser-Induced Thermal Desorption

1993 ◽  
Vol 334 ◽  
Author(s):  
V. M. Donnelly ◽  
K. V. Guinn ◽  
C. C. Cheng ◽  
I. P. Herman
Keyword(s):  
Thermal Desorption ◽  
Plasma Etching ◽  
Discharge Tube ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Laser Induced Fluorescence ◽  
Xps Analysis ◽  
X Ray ◽  
Si Films ◽  
Positive Ion

AbstractThis paper describes x-ray photoelectron spectroscopy (XPS) studies of etching of Si in high-density Cl2 plasmas. Polycrystalline Si films, masked with photoresist stripes, are etched and then transferred in vacuum to the XPS analysis chamber. Shadowing of photoelectrons by adjacent stripes and differential charging of the photoresist and poly-Si were used to separate contributions from the top of the mask, the side of the mask, the etched poly-Si sidewall, and the bottom of the etched trench. In pure Cl2 plasmas, surfaces are covered with about one monolayer of Cl. If oxygen is introduced into the plasma, either by addition of O2 or by erosion of the glass discharge tube, then a thin Si-oxide layer forms on the sides of both the poly-Si and the photoresist. Laser-induced thermal desorption (LITD) was used to study etching in real time. LITD of SiCI was detected by laser-induced fluorescence. These studies show that the Si-chloride layer formed during plasma etching is stable after the plasma is extinguished, so the XPS measurements are representative of the surface during etching. LITD measurements as a function of pressure and discharge power show that the etching rate is limited by the positive ion flux to the surface, and not by the supply of Cl2, at pressures above 0.5 mTorr and for ion fluxes of σ4× 1016cm−2 s−1.

Plasma Etching of Hydrogen-Silsesquioxane

1998 ◽  
Vol 511 ◽  
Author(s):  
Youfan Liu ◽  
Chris McMillan ◽  
Fred Dall
Keyword(s):  
Dielectric Constant ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Silicon Substrates ◽  
Hydrogen Silsesquioxane ◽  
Xps Spectra ◽  
X Ray ◽  
Lower Dielectric Constant ◽  
Fluorocarbon Polymer

ABSTRACTCF4 plasma etching of hydrogen-silsesquioxane films on bare silicon substrates was conducted. An increase in average etching rate and a decrease in dielectric constant from 2.9 to 2.7 were observed after a top layer was removed from the surface of the film, indicating that a negative density depth gradient in the film was developed during the cure processing, A small part of the reduction in dielectric constant may be attributed to structural change resulting from the plasma interaction with the films since a small amount of Si-F bonds were identified in the surface layer of the film after plasma etching. There are indications in the x-ray photoelectron spectroscopy (XPS) spectra that traces of fluorocarbon polymer residue have been generated during the plasma etching. The results of this study also indicate a possibility of obtaining a lower dielectric constant HSQ film by plasma etching.

Plasma Etching of SiON Films Using Liquefied C7F14 Gas as Perfluorocarbon Alternative

2020 ◽  
Vol 12 (5) ◽  
pp. 641-646
Author(s):  
Jaemin Lee ◽  
Jihun Kim ◽  
Junmyung Lee ◽  
Hyun Woo Lee ◽  
Kwang-Ho Kwon
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Film Surface ◽  
Optical Emission ◽  
Mixed Gas ◽  
Force Microscopy ◽  
Physicochemical Changes ◽  
Etching Profile ◽  
Langmuir Probe Measurements

In this study, we evaluated the possibility of replacing existing perfluorocarbon gas with C7F14, which can be recovered in its liquid state from room-temperature air. We performed plasma etching of SiON films using the CF4 + X + O2 mixed gas, where X = CHF3, C4F8, or C7F14, and examined the etching characteristics of the films (e.g., etching rate, etching profile, and selectivity over Si). Using contact angle goniometry, atomic force microscopy, and X-ray photoelectron spectroscopy, we analyzed the physicochemical changes in the etched SiON film surface. Moreover, optical emission spectroscopy and double Langmuir probe measurements were carried out for plasma diagnosis. Compared with the conventional CHF3 and C4F8 mixed plasma, the C7F14 mixed plasma exhibited a more perpendicular etching profile with higher SiON/Si selectivity and a smoother surface.

scholarly journals Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma

Coatings ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 105
Author(s):  
Seung Hyun Park ◽  
Kyung Eon Kim ◽  
Sang Jeen Hong
Keyword(s):  
Photoelectron Spectroscopy ◽  
Yttrium Aluminum Garnet ◽  
Silicon Oxide ◽  
Ceramic Materials ◽  
High Plasma ◽  
Coating Materials ◽  
Continuous Increase ◽  
X Ray ◽  
Bonding Structure ◽  
Manufacturing Environments

Coating the inner surfaces of high-powered plasma processing equipment has become crucial for reducing maintenance costs, process drift, and contaminants. The conventionally preferred alumina (Al2O3) coating has been replaced with yttria (Y2O3) due to the long-standing endurance achieved by fluorine-based etching; however, the continuous increase in radio frequency (RF) power necessitates the use of alternative coating materials to reduce process shift in a series of high-powered semiconductor manufacturing environments. In this study, we investigated the fluorine-based etching resistance of atmospheric pressure-sprayed alumina, yttria, yttrium aluminum garnet (YAG), and yttrium oxyfluoride (YOF). The prepared ceramic-coated samples were directly exposed to silicon oxide etching, and the surfaces of the plasma-exposed samples were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. We found that an ideal coating material must demonstrate high plasma-induced structure distortion by the fluorine atom from the radical. For endurance to fluorine-based plasma exposure, the bonding structure with fluoride was shown to be more effective than oxide-based ceramics. Thus, fluoride-based ceramic materials can be promising candidates for chamber coating materials.

Effect of Surface Chemistry on Ruthenium Wet Etching

2021 ◽  
Vol 314 ◽  
pp. 302-306
Author(s):  
Quoc Toan Le ◽  
E. Kesters ◽  
M. Doms ◽  
Efrain Altamirano Sánchez
Keyword(s):  
Surface Roughness ◽  
Photoelectron Spectroscopy ◽  
Etching Rate ◽  
Wet Etching ◽  
X Ray ◽  
Force Microscopy ◽  
Metal Free ◽  
Atomic Force ◽  
Different Types ◽  
Effect Of Surface

Different types of ALD Ru films, including as-deposited, annealed Ru, without and with a subsequent CMP step, were used for wet etching study. With respect to the as-deposited Ru, the etching rate of the annealed Ru film in metal-free chemical mixtures (pH = 7-9) was found to decrease substantially. X-ray photoelectron spectroscopy characterization indicated that this behavior could be explained by the presence of the formation of RuOx (x = 2,3) caused by the anneal. A short CMP step applied to the annealed Ru wafer removed the surface RuOx, at least partially, resulting in a significant increase of the etching rate. The change in surface roughness was quantified using atomic force microscopy.

scholarly journals Thermally Assisted Machine Hammer Peening of Arc-Sprayed ZnAl-Based Corrosion Protective Coatings

2021 ◽  
Vol 5 (4) ◽  
pp. 109
Author(s):  
Andreas Wirtz ◽  
Mohamed Abdulgader ◽  
Michael P. Milz ◽  
Wolfgang Tillmann ◽  
Frank Walther ◽  
...  
Keyword(s):  
Residual Stresses ◽  
Protective Coatings ◽  
Fatigue Behavior ◽  
Wind Waves ◽  
Offshore Wind ◽  
Coating Materials ◽  
Corrosive Media ◽  
Machine Hammer Peening ◽  
Hammer Peening ◽  
Compressive Residual Stresses

Structural elements of offshore facilities, e.g., offshore wind turbines, are subject to static and dynamic mechanical and environmental loads, for example, from wind, waves, and corrosive media. Protective coatings such as thermal sprayed ZnAl coatings are often used for protection, mainly against corrosive stresses. The Machine Hammer Peening (MHP) process is an innovative and promising technique for the post-treatment of ZnAl coating systems that helps reducing roughness and porosity and inducing compressive residual stresses. This should lead to an enhancement of the corrosion fatigue behavior. In this paper, the effect of a thermally assisted MHP process was investigated. The softening of the coating materials will have a direct effect on the densification, residual porosity and the distribution of cracks. The investigation results showed the influence of thermally assisted MHP on the surface properties, porosity, residual stresses, and hardness of the post-treated coatings. The best densification of the coating, i.e., the lowest porosity and roughness and the highest compressive residual stresses, were achieved at a process temperature of 300 °C. A further increase in temperature on the other hand caused a higher porosity and, in some cases, locally restricted melting of the coating and consequently poorer coating properties.

Advanced Die Saw Technology for WLCSP Reliability Enhancement

2019 ◽  
Vol 2019 (1) ◽  
pp. 000323-000326
Author(s):  
Ching Chia Chen ◽  
Yu-Po Wang ◽  
Jensen Tsai ◽  
Hsin Long Chen
Keyword(s):  
Plasma Etching ◽  
Dielectric Material ◽  
Side Wall ◽  
Bending Test ◽  
Process Time ◽  
Portable Devices ◽  
Coating Materials ◽  
Reliability Enhancement ◽  
Surrounding Areas ◽  
Low K

Abstract As consumer and portable devices get thinner and more functionality. Chips which are made by less than 28 nm node wafer with extreme Low-k (ELK) inter metal dielectric material is a trend in order to contain more transistors and to lower power consumption. However, side wall crack (SWC) for WLCSP is one of the major challenges since ELK layer getting brittle. Laser grooving is applied to remove metal before blade saw, but the high temperature during laser grooving usually easily generates HAZ (heat-affected zone) which can induce stress concentration and lower chip strength. The laser ablation also leaves metal-silicon residue (or recast) from the re-deposition of silicon to the groove and surrounding areas. Therefore, SWC (sidewall crack) is a huge potential risk waiting to happen after pick and place, during shipment and during SMT process. In the industry, HAZ size and SWC rate could be reduced by adjusting process parameters, or by exploring new alternatives to eliminate HAZ and silicon recast is one of driving factors of this paper. In this study, plasma etching was applied as surface treatment on the scribe line after laser grooving process with ELK wafer. Plasma could etch HAZ and recast area and expected to increase chip strength and reduce SWC rate. Plasma applied with various process time and power, and different types of mask coating materials were studied. Different plasma gases and effectiveness will be discussed. Conventional blade dicing process will be compared to different plasma etching conditions for mechanical properties of die using 3-point bending test to check die strength, and SEM and OM to verify quality of sidewall of the die. Finally drop test was performed to confirm the reliability enhancement.

scholarly journals Structural and Fluorine Plasma Etching Behavior of Sputter-Deposition Yttrium Fluoride Film

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 936 ◽  
Author(s):  
Wei-Kai Wang ◽  
Yu-Xiu Lin ◽  
Yi-Jie Xu
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Heating Temperature ◽  
Working Pressure ◽  
Etching Depth ◽  
Yttrium Fluoride ◽  
X Ray ◽  
Substrate Heating ◽  
Etching Behavior ◽  
Etched Surface

Yttrium fluoride (YF3) films were grown on sapphire substrate by a radio frequency magnetron using a commercial ceramic target in a vacuum chamber. The structure, composition, and plasma etching behavior of the films were systematically investigated. The YF3 film was deposited at a working pressure of 5 mTorr and an RF power of 150 W. The substrate-heating temperature was increased from 400 to 700 °C in increments of 100 °C. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction results confirmed an orthorhombic YF3 structure was obtained at a substrate temperature of 700 °C for 2 h. X-ray photoelectron spectroscopy revealed a strongly fluorinated bond (Y–F bond) on the etched surface of the YF3 films. HRTEM analysis also revealed that the YF3 films became yttrium-oxyfluorinated after exposure to fluorocarbon plasma. The etching depth was three times lower on YF3 film than on Al2O3 plate. These results showed that the YF3 films have excellent erosion resistance properties compared to Al2O3 plates.

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