Binary information storage at zero bias in quantum‐well diodes

1994 ◽  
Vol 76 (9) ◽  
pp. 5552-5560 ◽  
Author(s):  
F. A. Buot ◽  
A. K. Rajagopal
2021 ◽  
Vol 12 (1) ◽  
pp. 73-81
Author(s):  
Oliver Pabst ◽  
Øystein Magnus Sørebø ◽  
Karoline Sjøen Andersen ◽  
Erlend Lemva Ousdal ◽  
Sean William Bråthen ◽  
...  

Abstract Human skin has been classified as a non-volatile memristor and it is shown that information can be stored within for at least three minutes. Here we investigate whether it is possible to store information up to 20 minutes. Furthermore, we investigate whether the information can be based on four different states, not just two (binary). We stored the information into the skin of the forehead of the test subjects under three different electrodes, which allows in principle for 64 different combinations (3 electrodes, 4 states) and one can think of numbers on the base of four. For this experiment, we decided on the numbers 1234 and 3024 (that correspond to numbers 27 and 50 in the decimal system). Writing of the different states was done by the application of DC voltage pulses that cause electro-osmosis in the sweat ducts (nonlinear electrical measurements). Based on our results, we were not able to distinguish between four different states. However, we can show that binary information storage in human skin is possible for up to 20 minutes.


1993 ◽  
Vol 29 (2) ◽  
pp. 138 ◽  
Author(s):  
H. Nobuhara ◽  
K. Nakajima ◽  
K. Tanaka ◽  
T. Odagawa ◽  
T. Fujii ◽  
...  

2021 ◽  
Author(s):  
Frank Z. Wang

Abstract This study is the first use of Heisenberg's energy-time uncertainty principle to define information quantitatively from a measuring perspective: the smallest error in any measurement is a bit of information, i.e., 1 (bit)=(2∆E ∆t)⁄ℏ. If the input energy equals the Landauer bound, the time needed to write a bit of information is 1.75x10-14 s. Newton's cradle was used to experimentally verify the information-energy-mass equivalences deduced from the aforementioned concept. It was observed that the energy input during the creation of a bit of (binary) information is stored in the information carrier in the form of the doubled momentum or the doubled “momentum mass” (mass in motion) in both classical position-based and modern orientation-based information storage. Furthermore, the experiments verified our new definition of information in the sense that the higher the energy input is, the shorter the time needed to write a bit of information is. Our study may help understand the fundamental concept of information and the deep physics behind it.


1996 ◽  
Vol 441 ◽  
Author(s):  
J. Therrien ◽  
S. Mil'shtein ◽  
A. Chin

AbstractHeterojunction Quantum Well Lasers were tested under forward and reverse bias, by Scanning Electron Microscopy (SEM) working in Differential Voltage Contrast(DVC) mode. DVC utilizes the impact of electrical potential across a device on the emission of secondary electrons. DVC consists of storing and subtracting two digitized images of the tested device under zero bias and in an operational regime. Calibration of the resultant image provides for quantitative measurements of the potential across the device. The question of whether the DVC technique measures the electron affinity of a material or its work function or the thermodynamic potential has been addressed in recent papers, however questions remained regarding discrepancies between the expected Quasi Fermi Energy (QFE) and the measured values. The experimental part of our work concentrated on taking (QFE) profiles by DVC across a single quantum well laser operating in inverse population, threshold, and high power emission modes of photoemission. The intensity was measured by a calibrated photodetector aligned with the laser in the SEM chamber. The cleaved and yet operational lasers have as a central part a layer of In0.2Ga0.8As 600nm thick between two undoped layers of Al0.3Ga0.7As 0.1 μm thick each with cladding layer of n-type Al0.6Ga0.4As on one side and a similar p-type layer on the other. The shape of QFE indicated that eletrons and photons contribute to total energy over the intrinsic area. This QFE profiling across the laser reveals areas of electron and photon confinement.


2002 ◽  
Vol 721 ◽  
Author(s):  
N. X. Sun ◽  
A. M. Crawford ◽  
S. X. Wang

AbstractHigh performance magnetic heads, inductors and transformers, indispensable to information technology encompassing from information storage, portable power delivery, to wireless communication, require soft magnetic films with low coercivities, high permeability, and large ferromagnetic resonance frequencies.The Fe-Co-N-based films have a ferromagnetic resonance frequency of >1 GHz at zero-bias field, showing great promise for applications in write heads and integrated inductors in a frequency range of >1 GHz. Magnetization dynamics measurements at sub-nanosecond scale have been performed on Fe-Co-N high saturation soft magnetic films with Permalloy nanolayer seeds having a saturation magnetization of 24 kG. The high frequency behavior appears to be affected by magnetic anisotropy dispersion.One of the biggest challenges facing integration of magnetic material onto silicon is the compatibility of magnetics with standard silicon processing techniques. Integrated inductors were realized using ground planes of Co-Ta-Zr (p=100μΩ-cm). The magnetic properties of Co-Ta-Zr showed no change even after undergoing high temperature processing. Inductors with 1μm Co-Ta-Zr produced inductance values up to 60% higher than the air core inductors at frequencies up to 1.4 GHz.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Madeline Van Winkle ◽  
Harper O. W. Wallace ◽  
Niquana Smith ◽  
Andrew T. Pomerene ◽  
Michael G. Wood ◽  
...  

Abstract Optical polarizers encompass a class of anisotropic materials that pass-through discrete orientations of light and are found in wide-ranging technologies, from windows and glasses to cameras, digital displays and photonic devices. The wire-grids, ordered surfaces, and aligned nanomaterials used to make polarized films cannot be easily reconfigured once aligned, limiting their use to stationary cross-polarizers in, for example, liquid crystal displays. Here we describe a supramolecular material set and patterning approach where the polarization angle in stand-alone films can be precisely defined at the single pixel level and reconfigured following initial alignment. This capability enables new routes for non-binary information storage, retrieval, and intrinsic encryption, and it suggests future technologies such as photonic chips that can be reconfigured using non-contact patterning.


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