1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density
1993 ◽
Vol 32
(Part 1, No. 10)
◽
pp. 4393-4397
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2011 ◽
Vol 88
(6)
◽
pp. 872-876
◽
2015 ◽
Keyword(s):
Keyword(s):
2005 ◽
Vol 44
(No. 48)
◽
pp. L1460-L1462
◽