Investigation of SiC doped Sb3Te alloy for high-speed and high-thermal stability phase change random access memory applications

ABSTRACTNanoscale superlattice-like (SLL) dielectric was employed to reduce the power consumption of the Phase-change random access memory (PCRAM) cells. In this study, we have simulated and found that the cells with the SLL dielectric have a higher peak temperature compared to that of the cells with the SiO2 dielectric after constant pulse activation, due to the interface scattering mechanism. Scaling of the SLL dielectric has resulted in higher peak temperatures, which can be even higher after material/structural modifications. Furthermore, the SLL dielectric has good material properties that enable the cells to have high endurance. This shows the effectiveness of the SLL dielectric for advanced memory applications.

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Thermal Stability of Co-Sputtered Ru-Ti Alloy Electrodes for Dynamic Random Access Memory Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l1247 ◽

1998 ◽

Vol 37 (Part 2, No. 10B) ◽

pp. L1247-L1250 ◽

Cited By ~ 3

Author(s):

Ray-Hua Horng ◽

Dong-Sing Wuu ◽

Luh-Huei Wu ◽

Ming-Kwei Lee ◽

Shih-Hsiung Chan ◽

...

Keyword(s):

Thermal Stability ◽

Random Access ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Ti Alloy ◽

Access Memory ◽

Memory Applications ◽

Thermal Stability Of

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Device Characteristics of a Ge-doped SbTe alloy for High-speed Phase-change Random Access Memory

Journal of the Korean Physical Society ◽

10.3938/jkps.59.466 ◽

2011 ◽

Vol 59 (2(1)) ◽

pp. 466-469 ◽

Cited By ~ 6

Author(s):

Youngseok Kwon ◽

Jin-hyock Kim ◽

Sujin Chae ◽

Youngho Lee ◽

Soo Gil Jachun ◽

...

Keyword(s):

Phase Change ◽

High Speed ◽

Random Access ◽

Random Access Memory ◽

Access Memory

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Effect of surface cleaning on contact resistivity of amorphous GeCu2Te3 to a W electrode

MRS Advances ◽

10.1557/adv.2016.310 ◽

2016 ◽

Vol 1 (39) ◽

pp. 2731-2736 ◽

Cited By ~ 2

Author(s):

S. Shindo ◽

Y. Sutou ◽

J. Koike ◽

Y. Saito ◽

Y.-H. Song

Keyword(s):

Phase Change ◽

Random Access ◽

Surface Oxidation ◽

Random Access Memory ◽

Surface Cleaning ◽

High Thermal Stability ◽

Contact Resistivity ◽

Access Memory ◽

Change Material ◽

Effect Of Surface

ABSTRACTThe contact resistivity, ρc, between phase change material (PCM) and an electrode plays an important role in the operation of highly scaled phase change random access memory (PCRAM). We investigated the effect of surface cleaning on the ρc between a W electrode and amorphous GeCu2Te3 (GCT) which shows high thermal stability. The surface cleaning of the amorphous GCT was conducted by Ar reverse sputtering. The ρc of the amorphous GCT whose surface was cleaned with Ar reverse sputtering was 6.7×10-3Ω cm2. Meanwhile, the ρc of the amorphous GCT with no surface cleaning was 8.0×10-5Ω cm2. The low ρc in the amorphous GCT with no surface cleaning was apparently due to the existence of a low resistance Cu-rich underlayer which was formed as a consequence of surface oxidation of the amorphous GCT. These results indicate that the surface of a PCM must be treated carefully to accurately measure the contact resistivity between the PCM and electrodes.

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