Light emission despite doubly-forbidden radiative transitions in AlP/GaP quantum wells: Role of localized states

Laser-localized structures have been observed in several experiments based on broad-area semiconductor lasers. They appear as bounded regions of laser light emission which can exist independently of each other and are expected to be commuted via external optical perturbations. In this work, we perform a statistical analysis of time-resolved commutation experiments in a system of coupled lasers and show the role of wavelength, polarization and pulse energy in the switching process. Furthermore, we also analyse the response of the system outside of the stability region of laser-localized states in search of an excitable response. We observe not only a threshold separating two types of responses, but also a strong variability in the system's trajectory when returning to the initial stable fixed point.

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Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer

Applied Physics Letters ◽

10.1063/1.1637959 ◽

2004 ◽

Vol 84 (1) ◽

pp. 49-51 ◽

Cited By ~ 22

Author(s):

Yuanping Sun ◽

Yong-Hoon Cho ◽

E.-K. Suh ◽

H. J. Lee ◽

R. J. Choi ◽

...

Keyword(s):

Quantum Wells ◽

High Efficiency ◽

Light Emission ◽

Green Light ◽

Indium Content ◽

Carrier Dynamics ◽

Carrier Transfer ◽

Green Light Emission ◽

Effective Carrier

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The critical role of the coordination sphere in the high-efficiency blue-light emission from aminopyrazine metal-organic polymers

Dyes and Pigments ◽

10.1016/j.dyepig.2020.109025 ◽

2021 ◽

Vol 186 ◽

pp. 109025

Author(s):

João Humberto Dias Campos ◽

Meiry Edivirges Alvarenga ◽

Maykon Alves Lemes ◽

José Antônio do Nascimento Neto ◽

Freddy Fernandes Guimarães ◽

...

Keyword(s):

Blue Light ◽

Coordination Sphere ◽

High Efficiency ◽

Light Emission ◽

Critical Role ◽

Organic Polymers ◽

Blue Light Emission ◽

Metal Organic

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Role of dislocations in nitride laser diodes with different indium content

Scientific Reports ◽

10.1038/s41598-020-79528-z ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Agata Bojarska-Cieślińska ◽

Łucja Marona ◽

Julita Smalc-Koziorowska ◽

Szymon Grzanka ◽

Jan Weyher ◽

...

Keyword(s):

Quantum Wells ◽

Defect Density ◽

Laser Diodes ◽

Diffusion Path ◽

Vapour Phase ◽

Indium Content ◽

Nonradiative Recombination ◽

Light Emitters ◽

Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

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