Temperature dependence of terahertz optical characteristics and carrier transport dynamics in p-type transparent conductive CuCr1−xMgxO2 semiconductor films

2014 ◽  
Vol 104 (1) ◽  
pp. 012103 ◽  
Keyword(s):  
Temperature Dependence ◽  
Carrier Transport ◽  
Optical Characteristics ◽  
Semiconductor Films ◽  
Transport Dynamics ◽  
P Type

Temperature Dependent Study of Carrier Diffusion in Photon Enhanced Thermionic Emission Solar Converters

2013 ◽  
Vol 772 ◽  
pp. 634-639
Author(s):  
Yang Yang ◽  
Wen Zheng Yang ◽  
Wei Dong Tang ◽  
Chuan Dong Sun
Keyword(s):  
Solar Energy ◽  
Temperature Dependence ◽  
Carrier Transport ◽  
Elevated Temperatures ◽  
Thermionic Emission ◽  
Back Surface ◽  
Optical Parameters ◽  
Material Parameters ◽  
Novel Concept ◽  
P Type

Photon Enhanced Thermionic Emission (PETE) is a novel concept in solar energy conversion, which can efficiently harvest solar energy at elevated temperatures. However, the temperature dependence of material parameters has not been clearly stated so far. In this study, a model for carrier transport is presented based on one dimension diffusion equation. Material data of GaAs are used to testify the temperature impact on material parameters. We find that for higher doped p-type GaAs which is suitable for PETE cathode material, its electron diffusion length shows weak temperature dependence. Carrier transport efficiency can be boosted by optimizing the geometry of the cathode and the optical parameters of the material. Finally, we propose a design of reflective mode cathode with reflective back surface and nanostructure emissive surface for PETE application.

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Temperature Dependency ◽  
Transport Mechanisms ◽  
Schottky Rectifiers ◽  
P Type

scholarly journals Characteristics of P-Type and N-Type Photoelectrochemical Biosensors: A Case Study for Esophageal Cancer Detection

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1065
Author(s):  
Joseph-Hang Leung ◽  
Hong-Thai Nguyen ◽  
Shih-Wei Feng ◽  
Sofya B. Artemkina ◽  
Vladimir E. Fedorov ◽  
...  
Keyword(s):  
Esophageal Cancer ◽  
Cancer Cells ◽  
Carrier Transport ◽  
X Ray Diffraction ◽  
Photoelectrochemical Response ◽  
Carrier Separation ◽  
Human Esophageal Cancer ◽  
P Type ◽  
Esophageal Cancer Cells

P-type and N-type photoelectrochemical (PEC) biosensors were established in the laboratory to discuss the correlation between characteristic substances and photoactive material properties through the photogenerated charge carrier transport mechanism. Four types of human esophageal cancer cells (ECCs) were analyzed without requiring additional bias voltage. Photoelectrical characteristics were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV–vis reflectance spectroscopy, and photocurrent response analyses. Results showed that smaller photocurrent was measured in cases with advanced cancer stages. Glutathione (L-glutathione reduced, GSH) and Glutathione disulfide (GSSG) in cancer cells carry out redox reactions during carrier separation, which changes the photocurrent. The sensor can identify ECC stages with a certain level of photoelectrochemical response. The detection error can be optimized by adjusting the number of cells, and the detection time of about 5 min allowed repeated measurement.

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

scholarly journals Energized Ca2+ transport by hepatopancreatic basolateral plasma membranes of Homarus americanus.

1998 ◽  
Vol 201 (2) ◽  
pp. 211-220 ◽  
Author(s):  
Z Zhuang ◽  
G A Ahearn
Keyword(s):  
Transport System ◽  
Carrier Transport ◽  
Plasma Membranes ◽  
Basolateral Membrane ◽  
Membrane Vesicles ◽  
Homarus Americanus ◽  
Molt Cycle ◽  
Apparent Affinity ◽  
Carrier Mechanism ◽  
P Type

Ca2+ transport by hepatopancreatic basolateral membrane vesicles of Atlantic lobster (Homarus americanus) occurred by at least two independent processes: (1) an ATP-dependent carrier transport system, and (2) a Na+-gradient-dependent carrier mechanism. The sensitivity of ATP-dependent Ca2+ transport to vanadate indicated that it was probably due to a P-type ATPase. This system exhibited an extremely high apparent affinity for Ca2+ (Kt=65.28+/-14.39 nmol l-1; Jmax=1. 07+/-0.06 pmol microg-1 protein 8 s-1). The Na+-gradient-dependent carrier transport system exhibited the properties of a Ca2+/Na+ antiporter capable of exchanging external Ca2+ with intravesicular Na+ or Li+. Kinetic analysis of the Na+-dependence of the antiport indicated that at least three Na+ were exchanged with each Ca2+ (n=2. 91+/-0.22). When Li+ replaced Na+ in exchange for 45Ca2+, the apparent affinity for Ca2+ influx was not significantly affected (with Na+, Kt=14.57+/-5.02 micromol l-1; with Li+, Kt=20.17+/-6.99 micromol l-1), but the maximal Ca2+ transport velocity was reduced by a factor of three (with Na+, Jmax=2.72+/-0.23 pmol microg-1 protein 8 s-1; with Li+, Jmax=1.03+/-0.10 pmol microg-1 protein 8 s-1). It is concluded that Ca2+ leaves hepatopancreatic epithelial cells across the basolateral membrane by way of a high-affinity, vanadate-sensitive Ca2+-ATPase and by way of a low-affinity Ca2+/Na+ antiporter with an apparent 3:1 exchange stoichiometry. The roles of these transporters in Ca2+ balance during the molt cycle are discussed.

Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air

2015 ◽  
Vol 45 (4) ◽  
pp. 2087-2091 ◽  
Author(s):  
Shirong Zhao ◽  
Heather McFavilen ◽  
Shuo Wang ◽  
Fernando A. Ponce ◽  
Chantal Arena ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Ohmic Contact ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
P Type

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Sign in / Sign up

Export Citation Format

Share Document