Bias-dependent interface roughening and its effect on electric bistability of organic devices

2014 ◽  
Vol 104 (1) ◽  
pp. 011603 ◽  
Author(s):  
Q. Zeng ◽  
Y. T. You ◽  
F. F. Ye ◽  
W. B. Li ◽  
X. Q. Chen ◽  
...  
1991 ◽  
Vol 1 (10) ◽  
pp. 1139-1146 ◽  
Author(s):  
Mogens H. Jensen ◽  
Itamar Procaccia
Keyword(s):  

2021 ◽  
Vol 182 (3) ◽  
Author(s):  
Gernot Münster ◽  
Manuel Cañizares Guerrero

AbstractRoughening of interfaces implies the divergence of the interface width w with the system size L. For two-dimensional systems the divergence of $$w^2$$ w 2 is linear in L. In the framework of a detailed capillary wave approximation and of statistical field theory we derive an expression for the asymptotic behaviour of $$w^2$$ w 2 , which differs from results in the literature. It is confirmed by Monte Carlo simulations.


2010 ◽  
Vol 160 (23-24) ◽  
pp. 2501-2504 ◽  
Author(s):  
D. Adil ◽  
N.B. Ukah ◽  
R.K. Gupta ◽  
K. Ghosh ◽  
S. Guha

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Yingjie Liao ◽  
Takeshi Fukuda ◽  
Norihiko Kamata

Spray coating technique has been established as a promising substitute for the traditional coating methods in the fabrication of organic devices in many reports recently. Control of film morphology at the microscopic scale is critical if spray-coated devices are to achieve high performance. Here we investigate electrospray deposition protocols for the fabrication of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films with a single additive system under ambient conditions at room temperature. Critical deposition parameters including solution composition, applied voltage, and relative humidity are discussed systematically. Optimized process for preparing homogenous PEDOT:PSS thin films is applied to all-electrospray-coated organic photovoltaic cells and contributes to a power conversion efficiency comparable to that of the corresponding all-spin-coated device.


2002 ◽  
Vol 14 (42) ◽  
pp. 9913-9924 ◽  
Author(s):  
Yevgeni Preezant ◽  
Yohai Roichman ◽  
Nir Tessler

2012 ◽  
Vol 22 (15) ◽  
pp. 3261-3266 ◽  
Author(s):  
Cephas E. Small ◽  
Sai-Wing Tsang ◽  
Junji Kido ◽  
Shu Kong So ◽  
Franky So

2021 ◽  
Vol 7 (16) ◽  
pp. eabf8555
Author(s):  
Zhongwu Wang ◽  
Hongzhen Lin ◽  
Xi Zhang ◽  
Jie Li ◽  
Xiaosong Chen ◽  
...  

Interface stresses are pervasive and critical in conventional optoelectronic devices and generally lead to many failures and reliability problems. However, detection of the interface stress embedded in organic optoelectronic devices is a long-standing problem, which causes the unknown relationship between interface stress and organic device stability (one key and unsettled issue for practical applications). In this study, a kind of previously unknown molecular conformation–induced stress is revealed at the organic embedded interface through sum frequency generation (SFG) spectroscopy technique. This stress can be greater than 10 kcal/mol per nm2 and is sufficient to induce molecular disorder in the organic semiconductor layer (with energy below 8 kcal/mol per nm2), finally causing instability of the organic transistor. This study not only reveals interface stress in organic devices but also correlates instability of organic devices with the interface stress for the first time, offering an effective solution for improving device stability.


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