Amorphous organic devices degenerate semiconductors

2002 ◽  
Vol 14 (42) ◽  
pp. 9913-9924 ◽  
Author(s):  
Yevgeni Preezant ◽  
Yohai Roichman ◽  
Nir Tessler
Keyword(s):  
Degenerate Semiconductors ◽  
Organic Devices

Interface-controlled pulsed-laser deposited polymer films in organic devices

2010 ◽  
Vol 160 (23-24) ◽  
pp. 2501-2504 ◽  
Author(s):  
D. Adil ◽  
N.B. Ukah ◽  
R.K. Gupta ◽  
K. Ghosh ◽  
S. Guha
Keyword(s):  
Polymer Films ◽  
Pulsed Laser ◽  
Organic Devices

scholarly journals Improved Morphology of Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) Thin Films for All-Electrospray-Coated Organic Photovoltaic Cells

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Yingjie Liao ◽  
Takeshi Fukuda ◽  
Norihiko Kamata
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Photovoltaic Cells ◽  
Spray Coating ◽  
Organic Photovoltaic ◽  
Organic Photovoltaic Cells ◽  
Ambient Conditions ◽  
Deposition Parameters ◽  
Coating Methods ◽  
Organic Devices

Spray coating technique has been established as a promising substitute for the traditional coating methods in the fabrication of organic devices in many reports recently. Control of film morphology at the microscopic scale is critical if spray-coated devices are to achieve high performance. Here we investigate electrospray deposition protocols for the fabrication of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films with a single additive system under ambient conditions at room temperature. Critical deposition parameters including solution composition, applied voltage, and relative humidity are discussed systematically. Optimized process for preparing homogenous PEDOT:PSS thin films is applied to all-electrospray-coated organic photovoltaic cells and contributes to a power conversion efficiency comparable to that of the corresponding all-spin-coated device.

Origin of Enhanced Hole Injection in Inverted Organic Devices with Electron Accepting Interlayer

2012 ◽  
Vol 22 (15) ◽  
pp. 3261-3266 ◽  
Author(s):  
Cephas E. Small ◽  
Sai-Wing Tsang ◽  
Junji Kido ◽  
Shu Kong So ◽  
Franky So
Keyword(s):  
Hole Injection ◽  
Organic Devices

scholarly journals Revealing molecular conformation–induced stress at embedded interfaces of organic optoelectronic devices by sum frequency generation spectroscopy

2021 ◽  
Vol 7 (16) ◽  
pp. eabf8555
Author(s):  
Zhongwu Wang ◽  
Hongzhen Lin ◽  
Xi Zhang ◽  
Jie Li ◽  
Xiaosong Chen ◽  
...  
Keyword(s):  
Molecular Conformation ◽  
Optoelectronic Devices ◽  
Sum Frequency Generation ◽  
Interface Stress ◽  
Sum Frequency ◽  
Device Stability ◽  
Induced Stress ◽  
Organic Optoelectronic Devices ◽  
Organic Devices ◽  
Organic Optoelectronic

Interface stresses are pervasive and critical in conventional optoelectronic devices and generally lead to many failures and reliability problems. However, detection of the interface stress embedded in organic optoelectronic devices is a long-standing problem, which causes the unknown relationship between interface stress and organic device stability (one key and unsettled issue for practical applications). In this study, a kind of previously unknown molecular conformation–induced stress is revealed at the organic embedded interface through sum frequency generation (SFG) spectroscopy technique. This stress can be greater than 10 kcal/mol per nm2 and is sufficient to induce molecular disorder in the organic semiconductor layer (with energy below 8 kcal/mol per nm2), finally causing instability of the organic transistor. This study not only reveals interface stress in organic devices but also correlates instability of organic devices with the interface stress for the first time, offering an effective solution for improving device stability.

Temperature Dependence of the Diffusivity–Mobility Ratio in Degenerate Semiconductors in the Presence of a Large Magnetic Field

1973 ◽  
Vol 51 (4) ◽  
pp. 491-492 ◽  
Author(s):  
A. N. Chakravarti ◽  
D. P. Parui
Keyword(s):  
Magnetic Field ◽  
Temperature Dependence ◽  
Low Temperatures ◽  
Mobility Ratio ◽  
Degenerate Semiconductors ◽  
Large Magnetic Field ◽  
Increasing Temperature

The diffusivity–mobility ratio in degenerate semiconductors in the presence of a large magnetic field is found to increase with increasing temperature at a rate which is dependent on temperature at relatively low temperatures. It is also found that, at any given temperature, the ratio is increased by the application of the field.

The conduction band non-parabolicity of degenerate AZO semiconductors: k.p method

2018 ◽  
Vol 83 (3) ◽  
pp. 30101
Author(s):  
Asghar Esmaeili ◽  
Mehdi Faraji ◽  
Somayyeh Karimi
Keyword(s):  
Conduction Band ◽  
Fermi Energy ◽  
Classical Equation ◽  
Absolute Error ◽  
Analytical Expression ◽  
Degenerate Semiconductors ◽  
Doped Zno ◽  
K.P Method

We present a discussion regarding the conduction band non-parabolicity and the Fermi energy of Al doped ZnO (AZO) degenerate semiconductors using the higher orders of Fermi–Dirac (F-D) integrals. We find an analytical expression for Fermi energy, based on two-band k.p theory and modified Boltzmann's classical equation. We examine the accuracy of resulted expression using absolute error value.

Sign in / Sign up

Export Citation Format

Share Document