Irradiation and annealing of p-type silicon carbide

2014 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Elena V. Bogdanova ◽  
Maria V. Grigor'eva ◽  
Sergey P. Lebedev ◽  
Vitaly V. Kozlovski
Keyword(s):  
Silicon Carbide ◽  
Type Silicon ◽  
P Type

UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

1999 ◽  
Vol 2 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Carl-Mikael Zetterling ◽  
Mikael Östling ◽  
Chris I Harris ◽  
Peter C Wood ◽  
S.Simon Wong
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Type Silicon ◽  
P Type ◽  
Uv Ozone

Effects of Si interlayer conditions on platinum ohmic contacts for p-type silicon carbide

2002 ◽  
Vol 31 (5) ◽  
pp. 506-511 ◽  
Author(s):  
T. Jang ◽  
J. W. Erickson ◽  
L. M. Porter
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Type Silicon ◽  
P Type

Long term stability of gate-oxides on n- and p-type silicon carbide studied by charge injection techniques

1997 ◽  
Vol 46 (1-3) ◽  
pp. 263-266 ◽  
Author(s):  
E.G. Stein von Kamienski ◽  
C. Leonhard ◽  
F. Portheine ◽  
A. Gölz ◽  
H. Kurz
Keyword(s):  
Silicon Carbide ◽  
Charge Injection ◽  
Gate Oxides ◽  
Term Stability ◽  
Long Term Stability ◽  
Type Silicon ◽  
Injection Techniques ◽  
P Type

Growth and Nitridation of Silicon-Dioxide Films on Silicon-Carbide

1997 ◽  
Vol 470 ◽  
Author(s):  
Denis Sweatman ◽  
Sima Dimitrijev ◽  
Hui-Feng Li ◽  
Philip Tanner ◽  
H. Barry Harrison
Keyword(s):  
Silicon Carbide ◽  
Silicon Dioxide ◽  
Wide Bandgap ◽  
Device Fabrication ◽  
Nitrogen Doped ◽  
Wide Bandgap Semiconductor ◽  
Type Silicon ◽  
Boron Doped ◽  
P Type ◽  
Mos Device

ABSTRACTSilicon-carbide offers great potential as a wide bandgap semiconductor for electronic applications. A good quality oxide dielectric will allow MOS device fabrication and in particular N-channel mosfets for their higher electron mobility. To date oxides on N-type silicon-carbide (nitrogen doped) have exhibited excellent characteristics while on P-type (aluminium or boron doped) the characteristics are poor. This paper presents results for the oxidation and subsequent nitridation of N and P-type silicon-carbide. It illustrates the role that nitrogen at the interface has in improving the trap densities and that nitric oxide provides the nitrogen well. Nitrous oxide, previously used to nitride silicon dioxide on silicon, is shown to substantially deteriorate the interface density of states for both N and P-type substrates.

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