Electrical characteristics of tantalum and tantalum carbide Schottky diodes on n- and p-type silicon carbide as a function of temperature

2002 ◽  
Author(s):  
T. Jang ◽  
L.M. Porter
Keyword(s):  
Silicon Carbide ◽  
Schottky Diodes ◽  
Tantalum Carbide ◽  
Electrical Characteristics ◽  
Type Silicon ◽  
P Type

UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

1999 ◽  
Vol 2 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Carl-Mikael Zetterling ◽  
Mikael Östling ◽  
Chris I Harris ◽  
Peter C Wood ◽  
S.Simon Wong
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Type Silicon ◽  
P Type ◽  
Uv Ozone

scholarly journals The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices

2017 ◽  
Vol 897 ◽  
pp. 747-750 ◽  
Author(s):  
Peter M. Gammon ◽  
Fan Li ◽  
C.W. Chan ◽  
Ana M. Sanchez ◽  
Steven A. Hindmarsh ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Diodes ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Device Layer ◽  
Band Bending ◽  
Transmission Electron ◽  
Type Semiconductor ◽  
P Type ◽  
New Generation

A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to semi-insulating 4H silicon carbide (SiC) leading to a Si/SiC substrate solution that promises to combine the benefits of silicon-on-insulator (SOI) technology with that of SiC. Here, details of a process are given to produce thin films of silicon 1 and 2 μm thick on the SiC. Simple metal-oxide-semiconductor capacitors (MOS-Cs) and Schottky diodes in these layers revealed that the Si device layer that had been expected to be n-type, was now behaving as a p-type semiconductor. Transmission electron microscopy (TEM) of the interface revealed that the high temperature process employed to transfer the Si device layer from the SOI to the SiC substrate caused lateral inhomogeneity and damage at the interface. This is expected to have increased the amount of trapped charge at the interface, leading to Fermi pinning at the interface, and band bending throughout the Si layer.

Effects of Si interlayer conditions on platinum ohmic contacts for p-type silicon carbide

2002 ◽  
Vol 31 (5) ◽  
pp. 506-511 ◽  
Author(s):  
T. Jang ◽  
J. W. Erickson ◽  
L. M. Porter
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Type Silicon ◽  
P Type

Irradiation and annealing of p-type silicon carbide

2014 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Elena V. Bogdanova ◽  
Maria V. Grigor'eva ◽  
Sergey P. Lebedev ◽  
Vitaly V. Kozlovski
Keyword(s):  
Silicon Carbide ◽  
Type Silicon ◽  
P Type

Long term stability of gate-oxides on n- and p-type silicon carbide studied by charge injection techniques

1997 ◽  
Vol 46 (1-3) ◽  
pp. 263-266 ◽  
Author(s):  
E.G. Stein von Kamienski ◽  
C. Leonhard ◽  
F. Portheine ◽  
A. Gölz ◽  
H. Kurz
Keyword(s):  
Silicon Carbide ◽  
Charge Injection ◽  
Gate Oxides ◽  
Term Stability ◽  
Long Term Stability ◽  
Type Silicon ◽  
Injection Techniques ◽  
P Type
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