Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors

2014 ◽  
Vol 116 (21) ◽  
pp. 214504 ◽  
Author(s):  
Thanh Thuy Trinh ◽  
Kyungsoo Jang ◽  
Vinh Ai Dao ◽  
Junsin Yi
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Conductivity ◽  
Field Effect Mobility ◽  
Amorphous Ingazno

scholarly journals Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 119 ◽  
Author(s):  
Jihwan Park ◽  
Do-Kyung Kim ◽  
Jun-Ik Park ◽  
In Man Kang ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Effective Mass ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Electron Mass ◽  
Simulation Methods ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Electron Effective Mass ◽  
Amorphous Ingazno

We have investigated the effect of electron effective mass (me*) and tail acceptor-like edge traps density (NTA) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through numerical simulation. To examine the credibility of our simulation, we found that by adjusting me* to 0.34 of the free electron mass (mo), we can preferentially derive the experimentally obtained electrical properties of conventional a-IGZO TFTs through our simulation. Our initial simulation considered the effect of me* on the electrical characteristics independent of NTA. We varied the me* value while not changing the other variables related to traps density not dependent on it. As me* was incremented to 0.44 mo, the field-effect mobility (µfe) and the on-state current (Ion) decreased due to the higher sub-gap scattering based on electron capture behavior. However, the threshold voltage (Vth) was not significantly changed due to fixed effective acceptor-like traps (NTA). In reality, since the magnitude of NTA was affected by the magnitude of me*, we controlled me* together with NTA value as a secondary simulation. As the magnitude of both me* and NTA increased, µfe and Ion deceased showing the same phenomena as the first simulation. The magnitude of Vth was higher when compared to the first simulation due to the lower conductivity in the channel. In this regard, our simulation methods showed that controlling me* and NTA simultaneously would be expected to predict and optimize the electrical characteristics of a-IGZO TFTs more precisely.

scholarly journals Influence of active layer thickness, device architecture and degradation effects on the contact resistance in organic thin film transistors

2017 ◽  
Vol 30 (3) ◽  
pp. 46-50
Author(s):  
Cesar Adrian Pons Flores ◽  
Israel Mejía ◽  
Manuel Quevedo-Lopez ◽  
Clemente Alvarado Beltran ◽  
Luis Martín Reséndiz
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Active Layer Thickness ◽  
Field Effect Mobility ◽  
Device Architecture ◽  
Order Of Magnitude ◽  
Top Contact

We analyze the influence of three combined effects on the contact resistance in organic- based thin film transistors: a) the active layer thickness, b) device architecture and c) semiconductor degradation. Transfer characteristics and parasitic series resistance were analyzed in devices with three different active layer thicknesses (50, 100 and 150 nm) using top contact (TC) and bottom contact (BC) thin film transistor (TFT) configurations. In both configurations, the lowest contact resistance (2.49 × 106 ?) and the highest field-effect mobility (4.8 × 10-2 cm2/V·s) was presented in devices with the thicker pentacene film. Top contact thin film transistors presented field-effect mobility values one order of magnitude higher (4.8 × 10-2 cm2/V·s) than bottom contact ones (1 × 10-3 cm2/V·s). Threshold voltage for top-contact thin film transistors was -3.1 V. After 2 months, performance in the devices degraded and presented an increase of one order of magnitude   (105 - 106 ?) for BC-TFTs and two orders of magnitude (106 - 108 ?) for TC-TFTs in contact resistance.

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOxGate Insulator

2018 ◽  
Vol 39 (3) ◽  
pp. 371-374 ◽  
Author(s):  
Ravindra Naik Bukke ◽  
Christophe Avis ◽  
Mude Narendra Naik ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Remarkable Increase

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

scholarly journals Improving the electrical performance of solution processed oligothiophene thin-film transistors via structural similarity blending

2017 ◽  
Vol 5 (21) ◽  
pp. 5048-5054 ◽  
Author(s):  
Tim Leydecker ◽  
Laura Favaretto ◽  
Duc Trong Duong ◽  
Gabriella Zappalà ◽  
Karl Börjesson ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Structural Similarity ◽  
Single Component ◽  
Electrical Performance ◽  
Field Effect Mobility ◽  
Solution Processed

Here we show that the blending of structurally similar oligothiophene molecules is an effective approach to improve the field-effect mobility and Ion/Ioff as compared to single component based transistors.

Instability of OTFT with Organic Gate Dielectrics

2007 ◽  
Vol 124-126 ◽  
pp. 407-410
Author(s):  
Sang Chul Lim ◽  
Seong Hyun Kim ◽  
Gi Heon Kim ◽  
Jae Bon Koo ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Dielectric Thickness ◽  
Inverter Circuit

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

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