Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

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Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD

Surfaces and Interfaces ◽

10.1016/j.surfin.2021.101559 ◽

2021 ◽

pp. 101559

Author(s):

M.G. Ambartsumov ◽

V.A. Tarala ◽

M.S. Nikova ◽

S.O. Krandievsky ◽

L.V. Kozhitov

Keyword(s):

Thin Films ◽

Optical Properties ◽

Low Temperature ◽

Aluminum Nitride ◽

Coating Thickness ◽

Silicon Substrates

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Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

Journal of Applied Physics ◽

10.1063/1.4748048 ◽

2012 ◽

Vol 112 (4) ◽

pp. 044905 ◽

Cited By ~ 25

Author(s):

T. S. Pan ◽

Y. Zhang ◽

J. Huang ◽

B. Zeng ◽

D. H. Hong ◽

...

Keyword(s):

Thin Films ◽

Thermal Conductivity ◽

Aluminum Nitride ◽

Interface Structure ◽

Polycrystalline Aluminum ◽

Enhanced Thermal Conductivity

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Flexible and high thermal conductivity thin films based on polymer: Aminated multi-walled carbon nanotubes/micro-aluminum nitride hybrid composites

Composites Part A Applied Science and Manufacturing ◽

10.1016/j.compositesa.2012.06.009 ◽

2012 ◽

Vol 43 (11) ◽

pp. 1860-1868 ◽

Cited By ~ 41

Author(s):

Seran Choi ◽

Hyungu Im ◽

Jooheon Kim

Keyword(s):

Thin Films ◽

Thermal Conductivity ◽

Carbon Nanotubes ◽

Aluminum Nitride ◽

Hybrid Composites ◽

High Thermal Conductivity ◽

Multi Walled Carbon Nanotubes ◽

Walled Carbon Nanotubes

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High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films

ACS Nano ◽

10.1021/acsnano.0c09915 ◽

2021 ◽

Author(s):

Md Shafkat Bin Hoque ◽

Yee Rui Koh ◽

Jeffrey L. Braun ◽

Abdullah Mamun ◽

Zeyu Liu ◽

...

Keyword(s):

Thin Films ◽

Thermal Conductivity ◽

Aluminum Nitride

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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Materials ◽

10.3390/ma13153387 ◽

2020 ◽

Vol 13 (15) ◽

pp. 3387 ◽

Cited By ~ 1

Author(s):

Yong Chan Jung ◽

Su Min Hwang ◽

Dan N. Le ◽

Aswin L. N. Kondusamy ◽

Jaidah Mohan ◽

...

Keyword(s):

Thin Films ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Aluminum Nitride ◽

Nitrogen Source ◽

Atomic Layer ◽

Good Alternative ◽

Low Oxygen ◽

Composition Ratio ◽

Layer Deposition

Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor and nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides a higher growth per cycle (GPC), which is approximately 2.3 times higher at a deposition temperature of 300 °C and, also exhibits a low impurity concentration in as-deposited films. Low temperature AlN films deposited at 225 °C with a capping layer had an Al to N composition ratio of 1:1.1, a close to ideal composition ratio, with a low oxygen content (7.5%) while exhibiting a GPC of 0.16 nm/cycle. We suggest that N2H4 as a replacement for NH3 is a good alternative due to its stringent thermal budget.

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