scholarly journals The electrical properties of carrier transport between lead selenide polycrystallites manipulated by iodine concentration

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085316 ◽  
Author(s):  
Hao Yang ◽  
Xiaojiang Li ◽  
Guodong Wang ◽  
Jianbang Zheng
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Lead Selenide ◽  
Iodine Concentration

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

Carrier Transport and Lateral Conductivity in Nanocrystalline Silicon Layers

2000 ◽  
Vol 638 ◽  
Author(s):  
H. B. Kim ◽  
L. Montes ◽  
R. Krishnan ◽  
P. M. Fauchet ◽  
L. Tsybeskov
Keyword(s):  
Electrical Properties ◽  
Direct Current ◽  
Coulomb Blockade ◽  
Carrier Transport ◽  
Nanocrystalline Silicon ◽  
Conductivity Measurements ◽  
Si Nanocrystals ◽  
Ac Conductivity Measurements ◽  
Size Controlled ◽  
Nanocrystalline Si

AbstractWe have studied carrier transport and lateral electrical properties of nanocrystalline Si layers containing size controlled Si nanocrystals. Using results from direct current (dc) and alternating current (ac) conductivity measurements, the charging of Si nanocrystals and Coulomb blockade effect are discussed.

Temperature effect on the electrical properties of lead selenide thin films

1995 ◽  
Vol 149 (2) ◽  
pp. 611-618 ◽  
Author(s):  
M. S. Ali ◽  
K. A. Khan ◽  
M. S. R. Khan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Temperature Effect ◽  
Lead Selenide

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

2016 ◽  
Vol 45 (11) ◽  
pp. 5655-5662 ◽  
Author(s):  
M. Siva Pratap Reddy ◽  
Peddathimula Puneetha ◽  
V. Rajagopal Reddy ◽  
Jung-Hee Lee ◽  
Seong-Hoon Jeong ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Transport Mechanisms ◽  
Temperature Dependent ◽  
Mis Diode

ELECTRICAL PROPERTIES OF Si1-X-YGeXCY FILMS GROWN BY ION IMPLANTATION AND SOLID PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4234-4237
Author(s):  
XUEQIN LIU ◽  
CONGMIAN ZHEN ◽  
YINYUE WANG ◽  
JING ZHANG ◽  
YUEJIAO PU ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Transport Properties ◽  
Hall Mobility ◽  
Carrier Transport ◽  
Lattice Strain ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Strained Si ◽  
Carrier Transport Properties

Si 0.875-y Ge 0.125 C y ternary alloy films were grown on Si by ion implantation of C into Si 0.875 Ge 0.125 layers and subsequent solid phase epitaxy. It was shown that C atoms were nearly incorporated into substitutional sites and no SiC was formed in the SiGeC films by optimal two-step annealing. There is a prominent effect of C contents on carrier transport properties. Compared with strained Si 0.875 Ge 0.125 film, enhanced Hall mobility has been obtained in partially and fully strain compensated Si 0.875-y Ge 0.125 C y layer due to the reduction of lattice strain.

scholarly journals Correlation of Electrical Properties With Defects in A Homoepitaxial Chemical-Vapor-Deposited Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
S. Han ◽  
G. Rodriguez ◽  
A. Taylori ◽  
M. A. Plano ◽  
M. D. Moyer ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Diamond Film ◽  
Carrier Transport ◽  
Defect Density ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Limiting Factor ◽  
X Ray Diffraction ◽  
Density Region ◽  
X Ray

ABSTRACTA high-quality, low-stress 200 gim epitaxial diamond film has been grown on a 400 μm thick high-temperature-high-pressure Ila diamond. X-ray diffraction images of the film indicate that a large region of the film is fairly defect free and individual dislocations have been imaged in this region. Depth-resolved Raman results indicate that the region of the film with a low density of defects also has lower stress than in the higher defect density region. Transient photoconductivity measurements were performed on the high and low line defect density regions of the homoepitaxial diamond film to determine the effects of the stress and defect density on the combined electron-hole mobility and carrier lifetime. The correlation between the electrical properties and the x-ray diffraction imaging suggests that line defects may not be the limiting factor in the carrier transport at the present film quality

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

2008 ◽  
Vol 608 ◽  
pp. 55-109 ◽  
Author(s):  
Jaroslaw Dąbrowski ◽  
Seiichi Miyazaki ◽  
S. Inumiya ◽  
G. Kozłowski ◽  
G. Lippert ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Dielectric Material ◽  
Electrical Breakdown ◽  
Charge Trapping ◽  
Basic Knowledge ◽  
Dielectric Films ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

scholarly journals Electrical Properties and Carrier Transport Mechanism of Au/n-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

2014 ◽  
Vol 55 (5) ◽  
pp. 758-762 ◽  
Author(s):  
V. Janardhanam ◽  
I. Jyothi ◽  
Ji-Hyun Lee ◽  
Jae-Yeon Kim ◽  
V. Rajagopal Reddy ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Schottky Contact ◽  
Carrier Transport Mechanism
Sign in / Sign up

Export Citation Format

Share Document