Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Cited By ~ 3

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.110202 ◽

2011 ◽

Vol 50 ◽

pp. 110202 ◽

Cited By ~ 25

Author(s):

Sen Huang ◽

Shu Yang ◽

John Roberts ◽

Kevin J. Chen

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Instability ◽

Electron Mobility Transistors

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Measurement and characterization of interface state tunneling in metal-insulator-semiconductor structures

Solid-State Electronics ◽

10.1016/0038-1101(86)90140-1 ◽

1986 ◽

Vol 29 (6) ◽

pp. 597-606 ◽

Cited By ~ 8

Author(s):

Sanjay Jain ◽

Walter E. Dahlke

Keyword(s):

Interface State ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Chinese Physics B ◽

10.1088/1674-1056/20/2/027304 ◽

2011 ◽

Vol 20 (2) ◽

pp. 027304 ◽

Cited By ~ 9

Author(s):

Xiao-Hua Ma ◽

Cai-Yuan Pan ◽

Li-Yuan Yang ◽

Hui-You Yu ◽

Ling Yang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

Gate Recess

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Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al[sub 2]O[sub 3] and ZnO for Transparent Thin Film Transistor Applications

Journal of The Electrochemical Society ◽

10.1149/1.3421680 ◽

2010 ◽

Vol 157 (7) ◽

pp. H727 ◽

Cited By ~ 7

Author(s):

Sung-Min Yoon ◽

Sang-Hee Ko Park ◽

Chun-Won Byun ◽

Shin-Hyuk Yang ◽

Chi-Sun Hwang

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Electrical Characterization ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Transparent Thin Film Transistor

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