Gate-tunable graphene-organic interface barrier for vertical transistor and logic inverter

The glycocalyx layer on the surface of an endothelial cell is an interface barrier for uptake of macromolecules, such as low-density lipoprotein and albumin, in the cell. The shear-dependent uptake of macromolecules thus might govern the function of the glycocalyx layer. We therefore studied the effect of glycocalyx on the shear-dependent uptake of macromolecules into endothelial cells. Bovine aorta endothelial cells were exposed to shear stress stimulus ranging from 0.5 to 3.0 Pa for 48 h. The albumin uptake into the cells was then measured using confocal laser scanning microscopy, and the microstructure of glycocalyx was observed using electron microscopy. Compared with the uptake into endothelial cells under static conditions (no shear stress stimulus), the albumin uptake at a shear stress of 1.0 Pa increased by 16% and at 3.0 Pa decreased by 27%. Compared with static conditions, the thickness of the glycocalyx layer increased by 70% and the glycocalyx charge increased by 80% at a shear stress of 3.0 Pa. The albumin uptake at a shear stress of 3.0 Pa for cells with a neutralized (no charge) glycocalyx layer was almost twice that of cells with charged layer. These findings indicate that glycocalyx influences the albumin uptake at higher shear stress and that glycocalyx properties (thickness and charge level) are involved with the shear-dependent albumin uptake process.

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Balanced carrier injection of quantum dots light-emitting diodes: the case of interface barrier of bilayer ZnO electron transport layer

Nanotechnology ◽

10.1088/1361-6528/aae0b8 ◽

2018 ◽

Vol 29 (48) ◽

pp. 485203 ◽

Cited By ~ 3

Author(s):

Yufei Tu ◽

Shujie Wang ◽

Yidong Zhang ◽

Ling Chen ◽

Yan Fang ◽

...

Keyword(s):

Quantum Dots ◽

Electron Transport ◽

Light Emitting Diodes ◽

Transport Layer ◽

Electron Transport Layer ◽

Carrier Injection ◽

Light Emitting ◽

Interface Barrier

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All-organic vertical transistor in an analogous n-semiconductor/metal/p-semiconductor trilayer structure

Organic Electronics ◽

10.1016/j.orgel.2014.01.004 ◽

2014 ◽

Vol 15 (3) ◽

pp. 738-742 ◽

Cited By ~ 7

Author(s):

Ana C.B. Tavares ◽

José P.M. Serbena ◽

Ivo A. Hümmelgen ◽

Michelle S. Meruvia

Keyword(s):

Vertical Transistor ◽

Trilayer Structure

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Theoretical Study on Recombination Efficiency at S-DPVBi/Alq3 Interface in OLED

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.629.44 ◽

2012 ◽

Vol 629 ◽

pp. 44-48

Author(s):

Young Wook Hwang ◽

Kwang Sik Kim ◽

Tae Young Won

Keyword(s):

Indium Tin Oxide ◽

Numerical Study ◽

Organic Light Emitting Diodes ◽

Transport Layer ◽

Electron Transport Layer ◽

The Finite Element Method ◽

Light Emitting ◽

Recombination Efficiency ◽

Interface Barrier ◽

Recombination Kinetics

In this paper, we report our numerical study on the electrical-optical properties of the organic light emitting diodes (OLEDs) devices with n-doped layer, which is inserted in an effort to reduce the interface barrier between the cathode and the ETL(electron transport layer). In order to anlayze the electrical and optical characteristics such as the transport behavior of carriers, recombination kinetics, and emission property, we undertake the finite element method (FEM) in OLEDs. Our model includes Poisson’s equation, continuity equation to account for behavior of electrons and holes and the exciton continuity/transfer equation to account for recombination of carriers. We employ the multilayer structure that consists of indium tin oxide (ITO); 2, 2’, 7, 7’ –tetrakis (N, N-diphenylamine) - 9, 9’- spirobi-fluorene (S-TAD); 4, 4’- bis (2,2’- diphenylvinyl) - 1,1’- spirobiphenyl (S-DPVBi); tris (8-quinolinolato) aluminium (Alq3); calsium(Ca).

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