scholarly journals Evolution of structural topology of forming nanocrystalline silicon film by atomic-scale-mechanism-driven model based on realistic network

AIP Advances ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 095321
Author(s):  
Yixiong Zhang ◽  
Hong Wang ◽  
Shaoji Jiang
Keyword(s):  
Silicon Film ◽  
Nanocrystalline Silicon ◽  
Atomic Scale ◽  
Structural Topology ◽  
Model Based

Research on Nanocrystalline Silicon Film Solar Cells

2011 ◽  
Vol 347-353 ◽  
pp. 870-873
Author(s):  
Chun Rong Xue
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Band Gap ◽  
Optical Band Gap ◽  
Volume Fraction ◽  
Silicon Film ◽  
Nanocrystalline Silicon ◽  
Processing Parameters ◽  
Crystalline Volume Fraction ◽  
Hydrogen Dilution

Nanocrystalline silicon film has become the research hit of today’ s P-V solar technology. It’s optical band gap was controlled through changing the grain size and crystalline volume fraction for the quanta dimension effect. The crystalline volume fraction in nc-Si:H is modulated by varying the hydrogen concentration in the silane plasma. Also, the crystallinity of the material increases with increasing hydrogen dilution ratio, the band tail energy width of the nc-Si:H concurrently decreases. Two sets of nc-Si:H solar cells were made with different layer thicknesss, their electronic and photonic bandgap, absorption coefficient, optical band gap, nanocrystalline grain size(D), and etc have been stuied. In addition, we discussed the relationship between the stress of nc-Si thin films and H2 ratio. At last nc-Si:H solar cells have been designed and prepared successfully in the optimized processing parameters.

scholarly journals 3D Atomic Scale Quantification of Nanostructures and their Dynamics Using Model-based STEM

2020 ◽  
Vol 26 (S2) ◽  
pp. 2606-2608
Author(s):  
Sandra Van Aert ◽  
Annick De Backer ◽  
Annelies De wael ◽  
Jarmo Fatermans ◽  
Thomas Friedrich ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Model Based

Excimer Laser Crystallization of Nanocrystalline Silicon Thin Films

2015 ◽  
Vol 1120-1121 ◽  
pp. 361-368
Author(s):  
Li Jie Deng ◽  
Wei He ◽  
Zheng Ping Li
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Silicon Film ◽  
Threshold Energy ◽  
Nanocrystalline Silicon ◽  
Lateral Growth ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Excimer Laser Crystallization

Nanocrystalline silicon (nc-Si) thin film on glass substrate is subjected to excimer laser crystallized by varying the laser energy density in the range of 50~600 mJ/cm2. The effect of excimer laser crystallization on the structure of silicon film is investigated using Raman spectroscopy, X-ray diffraction, atomic force microscopy and scanning electron microscopy. The results show that polycrystalline silicon thin films can be obtained by excimer laser crystallization of nc-Si films. A laser threshold energy density of 200 mJ/cm2 is estimated from the change of crystalline fraction and surface roughness of the treated films. The growth of grain is observed and the crystallization mechanism is discussed based on the super lateral growth model. The nanocrystalline silicon grains in the films act as seeds for lateral growth to large grains.

Kinetics of Precipitation: Comparison between Monte Carlo Simulations, Cluster Dynamics and the Classical Laws

2005 ◽  
Vol 237-240 ◽  
pp. 671-676 ◽  
Author(s):  
Philippe Maugis ◽  
Frédéric Soisson ◽  
Ludovic Lae
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Diffusion Mechanism ◽  
Interface Energy ◽  
Atomic Scale ◽  
Atomistic Simulations ◽  
Model Based ◽  
Kinetics Of Precipitation ◽  
Kinetics Of ◽  
Nucleation Growth

We test the main approximations of the classical laws for nucleation, growth and coarsening by comparison with atomistic simulations of the kinetics of precipitation. We investigate the kinetics of phase separation in dilute A-B solid solutions by precipitation of B atoms in the Arich matrix. Classically, the kinetics is represented by the time evolution of the total number of particles and their mean radius. In this work, the kinetics is predicted by three types of models: (a) an Atomic-scale Kinetic Monte Carlo (AKMC) model based on a vacancy diffusion mechanism, (b) a Cluster Dynamics model, and (c) the MultiPreci model, based on the coupling of the classical laws of nucleation, growth and coarsening. Cluster Dynamics and the Multipreci model have been parameterized such that the thermodynamic and kinetic parameters (solubility, diffusion coefficient, interface energy) be identical to that of the AKMC. Under these conditions we find that the classical laws are in good agreement with the atomistic simulations as long as the thermodynamics of the solid solution remains strictly regular. As expected, Cluster Dynamics compares better with the atomistic simulations, especially if a precise description of the energetics of the smallest clusters is applied.

The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity

2009 ◽  
Vol 610-613 ◽  
pp. 367-371
Author(s):  
Hao Liu ◽  
Wei Jia Zhang ◽  
Shi Liang Jia ◽  
Wei Guo ◽  
Jin Wu
Keyword(s):  
Silicon Substrate ◽  
Electron Probe ◽  
Deposition Temperature ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Deposition Pressure ◽  
Boron Doped ◽  
High Deposition Temperature ◽  
Electron Probe Microanalyser

Boron-doped nanocrystalline silicon film was prepared through plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and glass substrate under the high deposition pressure (332.5-399Pa) and the high deposition temperature (320-360°C). The film was investigated by Raman, electron probe microanalyser, conductivity and mobility experimenting techniques. The conductivity of the boron-doped nanocrystalline silicon film was 2.97×102Ω-1cm-1. The results showed that the interface between the film and the silicon substrate might have quantum spot and small size effect, causing the increasing of conductivity.

Nanocrystalline Silicon Film Passively Q-Switched Laser Diode Pumped Nd:YAG/LBO Blue Laser

2010 ◽  
Vol 37 (6) ◽  
pp. 1564-1568
Author(s):  
王加贤 Wang Jiaxian ◽  
凌朝东 Ling Chaodong ◽  
韩磊 Han Lei
Keyword(s):  
Laser Diode ◽  
Silicon Film ◽  
Nanocrystalline Silicon ◽  
Blue Laser ◽  
Diode Pumped
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