Recombination of Shockley partial dislocations by electron beam irradiation in wurtzite GaN

2019 ◽  
Vol 126 (16) ◽  
pp. 165702 ◽  
Author(s):  
I. Belabbas ◽  
I. G. Vasileiadis ◽  
J. Moneta ◽  
J. Smalc-Koziorowska ◽  
G. P. Dimitrakopulos
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Shockley Partial ◽  
Partial Dislocations

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation

2012 ◽  
Vol 725 ◽  
pp. 45-48
Author(s):  
Yong Zhao Yao ◽  
Yoshihiro Sugawara ◽  
Yukari Ishikawa ◽  
Katsunori Danno ◽  
Hiroshi Suzuki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Basal Plane ◽  
Electron Beam Irradiation ◽  
Minimum Energy ◽  
Dislocation Line ◽  
Induced Current ◽  
Beam Irradiation ◽  
Etch Pit ◽  
Partial Dislocations ◽  
Electron Beam Induced Current

Electron beam induced current (EBIC) and etch pit method have been used to study the dissociation behavior of basal plane dislocations (BPDs) in 4H-SiC under electron beam irradiation. When 20 kV scanning electron beam was applied for 1 h, it has been found that BPDs whose dislocation lines were along [11-20] off-cut direction dissociated into partial dislocations (PDs) forming a stacking fault (SF) between them; while no dissociation was found for BPDs extending along other directions. These results are discussed in terms of different formation energy of SFs expanding from a pure screw type and a mixed type BPD. In addition, the angle between dislocation line of a BPD and the [11-20] off-cut direction might also play a role in determining the minimum energy for SF formation.

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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