Impact of metal silicide nanocrystals on the resistance ratio in resistive switching of epitaxial Fe3O4 films on Si substrates

TiO2/LaAlO3(TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/OFF resistance ratio can be greatly improved by introducing the LAO layer. The observed resistive switching characteristics are discussed as a function of LAO thickness and explained by the preferential formation and rupture of conductive filaments, composed of oxygen vacancies, in the LAO layer.

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Low temperature synthesis of amorphous La0.7Zn0.3MnO3 films grown on p+-Si substrates and its resistive switching properties

Journal of Wuhan University of Technology-Mater Sci Ed ◽

10.1007/s11595-016-1437-1 ◽

2016 ◽

Vol 31 (4) ◽

pp. 727-730 ◽

Cited By ~ 2

Author(s):

Qisong Chen ◽

Hua Wang ◽

Jiwen Xu ◽

Changcheng Wei ◽

Xiaowen Zhang ◽

...

Keyword(s):

Low Temperature ◽

Resistive Switching ◽

Low Temperature Synthesis ◽

Temperature Synthesis ◽

Si Substrates

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Fabrication and Resistance-Switching Behaviors of NiO Thin Films by Thermal Oxidation of Evaporated Ni Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.66.131 ◽

2009 ◽

Vol 66 ◽

pp. 131-134

Author(s):

X. Cao ◽

Xiao Min Li ◽

Wei Dong Yu ◽

Rui Yang ◽

Xin Jun Liu

Keyword(s):

Thin Films ◽

Thermal Oxidation ◽

Resistive Switching ◽

Resistance Switching ◽

Si Substrates ◽

Current Compliance

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.

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Influence of SiO2 Layer on Resistive Switching Properties of SiO2/CuXO Stack Structure

Materials Science Forum ◽

10.4028/www.scientific.net/msf.687.106 ◽

2011 ◽

Vol 687 ◽

pp. 106-111

Author(s):

Chih Yi Liu ◽

Yu Chen Li ◽

Chun Hung Lai ◽

Shih Kun Liu

Keyword(s):

Resistive Switching ◽

High Resistance State ◽

Switching Behavior ◽

Forming Process ◽

Dc Voltage ◽

Si Substrates ◽

Non Volatile Memory ◽

Resistance State ◽

The Difference ◽

Switching Characteristics

CuxO and SiO2thin films were deposited using a radio-frequency magnetron sputter on Pt/Ti/SiO2/Si substrates to form SiO2/CuxO/Pt and CuxO/Pt structures. The current-voltage characteristics were measured by DC voltage sweeping using a tungsten (W) probe. The two structures needed a large voltage to initiate the first resistive switching; this sweep was called the forming process. Afterwards, the resistances of the two structures could be switched reversibly between the low-resistance-state (LRS) and high-resistance-state (HRS) by applying a DC voltage. The conduction mechanisms of the LRS and the HRS were dominated by Ohmic conduction. Structures with non-destructive readout characteristics and long retention time were suitable for use in non-volatile memory. The difference between resistive switching in W-probe/SiO2/CuxO/Pt and W-probe/CuxO/Pt structures was investigated. The additional SiO2layer decreased the switching voltages and currents; this should be due to the presence of pinholes within the SiO2layer. The influence of SiO2thickness on the resistive switching characteristics was also investigated. The switching voltages and currents, except the forming voltage, decreased as the thickness of SiO2decreased. The conducting filament model with a thermochemical reaction was suggested to best explain the resistive switching behavior that was observed.

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