On the crossing behavior of forward current-voltage characteristics of Ni/SiO2/p-Si/Al MIS diode

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

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Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

Solid-State Electronics ◽

10.1016/0038-1101(95)00093-9 ◽

1996 ◽

Vol 39 (1) ◽

pp. 83-87 ◽

Cited By ~ 79

Author(s):

Enise Ayyildiz ◽

Abdulmecit Türüt ◽

Hasan Efeoğlu ◽

Sebahattin Tüzemen ◽

Mustafa Sağlam ◽

...

Keyword(s):

Interfacial Layer ◽

Series Resistance ◽

Schottky Diodes ◽

Forward Current ◽

Current Voltage ◽

Current Voltage Characteristics

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Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.749 ◽

2016 ◽

Vol 858 ◽

pp. 749-752 ◽

Cited By ~ 4

Author(s):

Anatoly M. Strel'chuk ◽

Viktor V. Zelenin ◽

Alexei N. Kuznetsov ◽

Joseph Tringe ◽

Albert V. Davydov ◽

...

Keyword(s):

Series Resistance ◽

Degradation Mechanism ◽

Schottky Diodes ◽

Defect Structures ◽

Induced Current ◽

Forward Current ◽

Current Voltage ◽

Before And After ◽

Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

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Computer technique for solving schottky barrier from dark forward current-voltage characteristics

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1980.0050 ◽

1980 ◽

Vol 127 (5) ◽

pp. 250

Author(s):

C. Boutrit ◽

J.C. Georges ◽

S. Ravelet

Keyword(s):

Schottky Barrier ◽

Computer Technique ◽

Forward Current ◽

Current Voltage ◽

Current Voltage Characteristics

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High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.963 ◽

2009 ◽

Vol 615-617 ◽

pp. 963-966 ◽

Cited By ~ 9

Author(s):

Taku Horii ◽

Tomihito Miyazaki ◽

Yu Saito ◽

Shin Hashimoto ◽

Tatsuya Tanabe ◽

...

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Figure Of Merit ◽

Schottky Barrier Diodes ◽

Field Plate ◽

Forward Current ◽

Low Dislocation Density ◽

Current Voltage ◽

Dislocation Densities ◽

Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

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