Nickel oxide superconductor has cuprate-like electronic properties

Physics Today ◽  
2020 ◽  
Vol 2020 (1) ◽  
pp. 0214a
2018 ◽  
Vol 1 (7) ◽  
pp. 3113-3122 ◽  
Author(s):  
Florian Ullrich ◽  
Sabina Hillebrandt ◽  
Sebastian Hietzschold ◽  
Valentina Rohnacher ◽  
Tomasz Marszalek ◽  
...  

2017 ◽  
Vol 19 (4) ◽  
pp. 3366-3383 ◽  
Author(s):  
R. H. Aguilera-del-Toro ◽  
F. Aguilera-Granja ◽  
L. C. Balbás ◽  
A. Vega

We report a comprehensive theoretical study of the structural and electronic properties of neutral and charged nickel oxide clusters, NinOm0/± (n = 3–8 and m = 1–10), in the context of recent experiments of photodissociation and Ion Mobility Mass Spectrometry.


RSC Advances ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 5882-5890 ◽  
Author(s):  
P. Dubey ◽  
Netram Kaurav ◽  
Rupesh S. Devan ◽  
G. S. Okram ◽  
Y. K. Kuo

A thermal decomposition route with different sintering temperatures was employed to prepare non-stoichiometric nickel oxide (Ni1−δO) from Ni(NO3)2·6H2O as a precursor.


2017 ◽  
Vol 9 (20) ◽  
pp. 17201-17207 ◽  
Author(s):  
Raisul Islam ◽  
Gang Chen ◽  
Pranav Ramesh ◽  
Junkyo Suh ◽  
Nobi Fuchigami ◽  
...  

Author(s):  
M. T. Tinker ◽  
L. W. Hobbs

There is considerable technological interest in oxidation of nickel because of the importance of nickel-base superalloys in high-temperature oxidizing environments. NiO scales on nickel grow classically, by outward diffusion of nickel through the scale, and are among the most studied of oxidation systems. We report here the first extensive characterization by transmission electron microscopy of nickel oxide scales formed on bulk nickel substrates and sectioned both parallel and transversely to the Ni/NiO interface.Electrochemically-polished nickel sheet of 99.995% purity was oxidized at 1273 K in 0.1 MPa oxygen partial pressure for times between 5 s and 25 h. Parallel sections were produced using a combination of electropolishing of the nickel substrate and ion-beam thinning of the scale to any desired depth in the scale. Transverse sections were prepared by encasing stacked strips of oxidized nickel sheet in epoxy resin, sectioning transversely and ion-beam thinning until thin area spanning one or more interfaces was obtained.


Author(s):  
C.M. Teng ◽  
T.F. Kelly ◽  
J.P. Zhang ◽  
H.M. Lin ◽  
Y.W. Kim

Spherical submicron particles of materials produced by electrohydrodynamic (EHD) atomization have been used to study a variety of materials processes including nucleation of alternative crystallization phases in iron-nickel and nickel-chromium alloys, amorphous solidification in submicron droplets of pure metals, and quasi-crystal formation in nickel-chromium alloys. Some experiments on pure nickel, nickel oxide single crystals, the nickel/nickel(II) oxide interface, and grain boundaries in nickel monoxide have been performed by STEM. For these latter studies, HREM is the most direct approach to obtain particle crystal structures at the atomic level. Grain boundaries in nickel oxide have also been investigated by HREM. In this paper, we present preliminary results of HREM observations of NiO growth on submicron spheres of pure nickel.Small particles of pure nickel were prepared by EHD atomization. For the study of pure nickel, 0.5 mm diameter pure nickel wire (99.9975%) is sprayed directly in the EHD process. The liquid droplets solidify in free-flight through a vacuum chamber operated at about 10-7 torr.


Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.


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