First Synthesis of Diindeno[1,2-g:1',2'-s]rubicene Derivatives and their Evaluation as Semiconductors

2012 ◽  
Vol 65 (2) ◽  
pp. 145 ◽  
Author(s):  
Mark Bown ◽  
Christopher J. Dunn ◽  
Craig M. Forsyth ◽  
Peter Kemppinen ◽  
Th. Birendra Singh ◽  
...  

Solution-processable derivatives 4a–d of the novel diindeno[1,2-g:1′,2′-s]rubicene ring system have been prepared in three steps from 1,5-dichloroanthraquinone. Charge extraction by linearly increasing voltage measurements indicates that 4a–d have bulk mobilities <10–7 cm2 V–1 s–1. Consistent with these low mobility values, field-effect transistors fabricated from 4a–d show poor performance. X-ray crystallographic analyses indicate that in the crystalline state, molecules of compounds 4b–d pack in a manner that hinders π–π stacking, thus preventing strong electronic coupling between molecules that is essential for high charge mobility semiconductor performance.

2015 ◽  
Vol 51 (38) ◽  
pp. 8120-8122 ◽  
Author(s):  
Kwang Hun Park ◽  
Kwang Hee Cheon ◽  
Yun-Ji Lee ◽  
Dae Sung Chung ◽  
Soon-Ki Kwon ◽  
...  

The selenophene-substitution can lead to a higher crystalline order as well as a high charge carrier mobility in isoindigo-based polymers.


2015 ◽  
Vol 51 (3) ◽  
pp. 503-506 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Wenhua Zhang ◽  
Shiqiang Bai ◽  
Kuo-Wei Huang ◽  
...  

Two stable dianthraceno[a,e]pentalenes were synthesized and DAP2 exhibited a high charge carrier mobility of 0.65 cm2 V−1 s−1 due to its dense packing.


Polymers ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 563 ◽  
Author(s):  
Yong Jeong ◽  
Jeong Oh ◽  
Ho Song ◽  
Tae An

In this work, we characterized poly(quinacridone-diphenylquinoxaline) (PQCTQx). PQCTQx was synthesized by a Suzuki coupling reaction and the synthesized PQCTQx was used as a polymeric semiconducting material in organic field-effect transistors (OFETs) to research the potential of using quinacridone derivatives. The measured field-effect mobility of the pristine PQCTQx film was 6.1 × 10−3 cm2/(V·s). A PQCTQx film heat-treated at 150 °C exhibited good field-effect performances with a hole mobility of 1.2 × 10−2 cm2/(V·s). The improved OFET behaviors resulting from the mild thermal treatment was attributed to improved packing of the molecules in the film, as determined using X-ray diffraction, and to decreased channel resistance.


2011 ◽  
Vol 679-680 ◽  
pp. 338-341 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Shinya Kotake ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki

We report on electrical and physical investigations aimed to clarify the mechanisms behind the high channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors processed with POCl3 annealing. By low-temperature capacitance–voltage analysis, we found that the shallow interface traps are effectively removed by P incorporation. Using x-ray photoelectron spectroscopy, we found that the three-fold coordinated P atoms exist at the oxide/4H-SiC interface. The overall results suggest that P atoms directly remove the Si–Si bonds and thus eliminate the near-interface traps.


2015 ◽  
Vol 106 (25) ◽  
pp. 251604 ◽  
Author(s):  
Naoka Nagamura ◽  
Yuta Kitada ◽  
Junto Tsurumi ◽  
Hiroyuki Matsui ◽  
Koji Horiba ◽  
...  

2014 ◽  
Vol 2 (47) ◽  
pp. 10110-10115 ◽  
Author(s):  
Jessica Wade ◽  
Florian Steiner ◽  
Dorota Niedzialek ◽  
David T. James ◽  
Youngsuk Jung ◽  
...  

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