Preparation of Cu/ZrW2O8 structures by chemical deposition from formaldehyde-free solution

2021 ◽  
pp. 1-7
Author(s):  
N. Mirchev ◽  
D. Lazarova ◽  
M. Georgieva ◽  
M. Petrova ◽  
D. Tachev ◽  
...  
Keyword(s):  
Chemical Deposition ◽  
Free Solution

Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
A. Goullet ◽  
R. Silva ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Spectroscopic Ellipsometry ◽  
Chemical Deposition ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Signal To Noise ◽  
Rectification Factor ◽  
Mis Devices ◽  
The Ideal

AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

Chemical deposition of hard composite coatings Ni–Cu–P–Cr2O3

2020 ◽  
pp. 179-181
Author(s):  
A.A. Abrashov A.A. ◽  
E.G. Vinokurov ◽  
M.A. Egupova ◽  
V.D. Skopintsev
Keyword(s):  
Chromium Oxide ◽  
Alkaline Solution ◽  
Composite Coatings ◽  
Chemical Deposition ◽  
Alkaline Solutions ◽  
Functional Surface ◽  
Heat Treated ◽  
Weakly Acid Solution ◽  
Coating Composition ◽  
Weakly Acidic Solution

The technological (deposition rate, coating composition) and functional (surface roughness, microhardness) characteristics of chemical composite coatings Ni—Cu—P—Cr2O3 obtained from weakly acidic and slightly alkaline solutions are compared. It is shown that coatings deposited from slightly alkaline solution contain slightly less phosphorus and chromium oxide than coatings deposited from weakly acid solution (2...3 % wt. phosphorus and up to 3.4 % wt. chromium oxide), formed at higher rate (24...25 microns per 1 hour of deposition at temperature of 80 °C), are characte rized by lower roughness and increased microhardness. The Vickers microhardness at 0.05 N load of composite coatings obtained from slightly alkaline solution and heat-treated at 400 °C for 1 hour is 13.5...15.2 GPa, which is higher than values for coatings deposited made of weakly acidic solution. The maximum microhardness of coatings is achieved at concentration 20 g/l of Cr2O3 particles. The technology of chemical deposition of Ni—Cu—P—Cr2O3 coatings formed in slightly alkaline solution is promising for obtaining of materials with increased hardness and wear resistance.

The diffusion coefficients 110mAg isotope in copper-contained chalcogenide films obtained by chemical deposition

2016 ◽  
Author(s):  
Д.Л. Байдаков
Keyword(s):  
Diffusion Coefficients ◽  
Chalcogenide Glasses ◽  
Film Formation ◽  
Polymer Network ◽  
Chemical Deposition ◽  
Film Deposition ◽  
Constant Current ◽  
Residual Pressure ◽  
Quartz Ampoule ◽  
Chalcogenide Films

Методом химического нанесения из растворов халькогенидных стекол в н-бутиламине получены многокомпонентные халькогенидные пленки CuI-As2Se3, CuI-PbI2-As2Se3, CuI-SbI3-As2Se3, CuI-SbI3-PbI2-As2Se3. Синтез многокомпонентных медьсодержащих халькогенидных стекол, использовавшихся для нанесения пленок, проводили методом вакуумной плавки в кварцевых ампулах при температуре 400…950 °С и остаточном давлении не более 0,13 Па. Закалку стекол производили от 600 °С в воду со льдом с разливом расплава в ампуле. Навеску стекла размельчали в порошок и кипятили в н-бутиламине до полного растворения. Для предотвращения процессов окисления, нанесение и отжиг пленок проводили в атмосфере химически инертного азота. Подложку помещали на устройство для вращения, наносили на нее раствор и вращали подложку со скоростью несколько тысяч оборотов в минуту. Отжиг пленок проводили при температуре 100 °С в течение 1 ч. Измерение электропроводности полученных пленок проводили на постоянном и переменном токе в зависимости от значений электропроводности в температурном интервале 20…100 °С. Измерение коэффициентов диффузии проводили абсорбционным методом. Из диффузионных экспериментов определены значения коэффициентов диффузии катионов изотопа 110mAg в медьсодержащих халькогенидных пленках. Установлено, что значения коэффициентов диффузии ионов Ag+ в химически нанесенных пленках и исходных стеклах практически не различаются. Аналогию значений коэффициентов диффузии изотопа 110mAg в халькогенидных стеклах и пленках на их основе можно объяснить сохранением полимерной сетки связей халькогенидных стекол при их растворении в органических основаниях (аминах). В процессе нанесения и формирования пленок полимерная (макромолекулярная) структура раствора халькогенидных стекол сохраняется. The method of chemical deposition from solutions of chalcogenide glasses in n-butyl amine obtained multicomponent chalcogenide films CuI-As2Se3, CuI-PbI2-As2Se3, CuI-SbI3-As2Se3, CuI-SbI3-PbI2-As2Se3. Synthesis of copper multicomponent chalcogenide glasses, used for film deposition was carried out by vacuum melting in quartz ampoule at a temperature of 400…950 °C and a residual pressure of not more than 0.13 Pa. The temperature of glass produced from the 600 °C to the ice water spill of the melt in the ampoule. Weigh glass comminuted to a powder and heated in n-butylamine until complete dissolution. To prevent oxidation, deposition and annealing of the films was carried out in an atmosphere of nitrogen chemically inert. The substrate is placed on a device for rotating, it was applied to the solution and the substrate was rotated at a speed of several thousand revolutions per minute. Annealing of the films was carried out at 100 °C for 1 hour. Measurement of the electrical conductivity of the obtained films was conducted at a constant current and variable depending on the conductivity values ​​in the temperature range from 20 to 100 °C. Measurement of diffusion coefficients was performed according to the absorption method. From diffusion experiments, the values ​​of the diffusion coefficients 110mAg isotope cations in copper chalcogenide films. It was found that the values ​​of the diffusion coefficients of the ions Ag+ in a chemically deposited films and the original glasses are indistinguishable. The analogy of the diffusion coefficient values ​​110mAg isotope in chalcogenide glasses and films based on them can be attributed to the preservation of the polymer network connections chalcogenide glasses when dissolved in organic bases (amines). During application and film formation the polymer (macromolecular) structure of chalcogenide glasses of the solution is maintained.

Boundary Condition Design to Heat a Moving Object at Uniform Transient Temperature Using Inverse Formulation

2004 ◽  
Vol 126 (3) ◽  
pp. 619-626 ◽  
Author(s):  
Hakan Ertu¨rk ◽  
Ofodike A. Ezekoye ◽  
John R. Howell
Keyword(s):  
Boundary Condition ◽  
Temperature Distribution ◽  
Design Problem ◽  
Manufacturing Industry ◽  
Three Dimensional ◽  
Chemical Deposition ◽  
Iterative Solution ◽  
Conveyor Belt ◽  
Temperature History ◽  
Transient Temperature

The boundary condition design of a three-dimensional furnace that heats an object moving along a conveyor belt of an assembly line is considered. A furnace of this type can be used by the manufacturing industry for applications such as industrial baking, curing of paint, annealing or manufacturing through chemical deposition. The object that is to be heated moves along the furnace as it is heated following a specified temperature history. The spatial temperature distribution on the object is kept isothermal through the whole process. The temperature distribution of the heaters of the furnace should be changed as the object moves so that the specified temperature history can be satisfied. The design problem is transient where a series of inverse problems are solved. The process furnace considered is in the shape of a rectangular tunnel where the heaters are located on the top and the design object moves along the bottom. The inverse design approach is used for the solution, which is advantageous over a traditional trial-and-error solution where an iterative solution is required for every position as the object moves. The inverse formulation of the design problem is ill-posed and involves a set of Fredholm equations of the first kind. The use of advanced solvers that are able to regularize the resulting system is essential. These include the conjugate gradient method, the truncated singular value decomposition or Tikhonov regularization, rather than an ordinary solver, like Gauss-Seidel or Gauss elimination.

Kinetic laws of the process of chemical deposition of copper from trilonate solutions

2020 ◽  
Author(s):  
L. A. Brusnitsina ◽  
E. I. Stepanovskih ◽  
T. A. Alekseeva
Keyword(s):  
Chemical Deposition

scholarly journals Low-voltage activated (LVA) inward current in murine antral smooth muscle cells is an artifact

2021 ◽  
Author(s):  
Ji Yeon Lee ◽  
Haifeng Zheng ◽  
Kenton M. Sanders ◽  
Sang Don Koh
Keyword(s):  
Low Voltage ◽  
External Solution ◽  
Physiological Salt Solution ◽  
Channel Blockers ◽  
Free Solution ◽  
Inward Current ◽  
High K ◽  
Voltage Dependent ◽  
Inward Currents ◽  
Rich Solution

We characterized the two types of voltage-dependent inward currents in murine antral SMC. The HVA and LVA inward currents were identified when cells were bathed in Ca2+-containing physiological salt solution. We examined whether the LVA inward current was due to: 1) T-type Ca2+ channels, 2) Ca2+-activated Cl- channels, 3) non-selective cation channels (NSCC) or 4) voltage-dependent K+ channels with internal Cs+-rich solution. Replacement of external Ca2+ (2 mM) with equimolar Ba2+ increased the amplitude of the HVA current but blocked the LVA current. Nicardipine blocked the HVA current, and in the presence of nicardipine, T-type Ca2+ blockers failed to block LVA. The Cl- channel antagonist had little effect on LVA. Cation-free external solution completely abolished both HVA and LVA. Addition of Ca2+ in cation-free solution restored only HVA currents. Addition of K+ (5 mM) to cation-free solution induced LVA current that reversed at -20 mV. These data suggest that LVA is not due to T-type Ca2+ channels, Ca2+-activated Cl- channels or NSCC. Antral SMC express A-type K+ currents (KA) and delayed rectifying K+ currents (KV) with dialysis of high K+ (140 mM) solution. When cells were exposed to high K+ external solution with dialysis of Cs+-rich solution in the presence of nicardipine, LVA was evoked and reversed at positive potentials. These HK-induced inward currents were blocked by K+ channel blockers, 4-aminopyridine and TEA. In conclusion, LVA inward currents can be generated by K+ influx via KA and KV channels in murine antral SMC when cells were dialyzed with Cs+-rich solution.

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