Evaluation of carbon stripper foils produced by a nitrogen ion beam sputtering method

ABSTRACTWN films were deposited on clean Si substrates by Reactive Ion Beam Sputtering in a UHV system. The growth mode of the films as a function of the nitrogen ion energy was investigated by in situ Auger Electron Spectrometry. The energy of the incident ions was varied from 250 eV to 3 keV. We observed a significant nitridation of the silicon at the very beginning of the deposition. This nitridation is more pronounced for the lower energy and is more reduced for 2 keV-ions. It seems to follow the trend of the film composition: 250 eV-ions and 2 keV-ions result in N-rich films (N/W≈1) and W-rich films (N/W≈0.5), respectively. All these results are discussed in terms of sputtering yield, backscattering and sticking coefficient and are explained by taking into account: first, the interaction between the incident ions and the target, and second, the interaction between the species emitted by the target and the growing film.

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Dual Ion Beam Sputtering for Chromium Nitride as an Alternative to Electroplated Hexavalent Chromium

Materials Science Forum ◽

10.4028/www.scientific.net/msf.486-487.301 ◽

2005 ◽

Vol 486-487 ◽

pp. 301-304

Author(s):

Kyoung Chul Shin ◽

Jong Min Lim ◽

Chong Mu Lee

Keyword(s):

Corrosion Resistance ◽

Deposition Rate ◽

Ion Beam ◽

Rf Power ◽

Ion Beam Sputtering ◽

Chromium Plating ◽

Beam Sputtering ◽

Nitrogen Ion ◽

Dual Ion Beam Sputtering ◽

Argon Ion

The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and even carcinogenic. Therefore, it is indispensable to develop an alternative deposition technique. To explore the feasibility of sputtering as an alternative technique for chromium plating, we investigated the dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrNx deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-powers. The deposition rate of CrNx depends more strongly upon the rf-power for argon ion beam than that of the nitrogen ion beam. The hardness of the CrNx film can be maximized by optimizing the rf-power, so that the volume percent of the Cr2N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrNx film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium.

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Investigation of Mechanical Properties and Microstructure of Boron Films Implanted by Polyenergetic Nitrogen Ion

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.373-374.396 ◽

2008 ◽

Vol 373-374 ◽

pp. 396-399

Author(s):

Zhi Hai Cai ◽

Ping Zhang ◽

Jia Wu He ◽

Jun Jun Zhao ◽

Jun Tan

Keyword(s):

Mechanical Properties ◽

Photoelectron Spectroscopy ◽

High Speed ◽

Ion Beam ◽

High Speed Steel ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Nitrogen Ions ◽

Ir Analysis ◽

Nitrogen Ion

In this paper, boron films were deposited on W6Mo5Cr4V2 high speed steel (HSS) via ion beam sputtering of boron target and implanted with polyenergetic(50 keV, 30 keV, 10 keV) nitrogen ions. The mechanical properties of the implanted layer were tested by Vicker`s hardness and SKODA wear tester. The microstructure of the implanted layer was analysed by X-ray Photoelectron Spectroscopy (XPS) and Fourier Infrared (IR) spectroscopy. Experimental results showed that the HSS substrate was intensified obviously after the implantation of boron and nitrogen ion. When the nitrogen dose equals to 12.8×1017 ions/cm2, the hardness reaches its highest value, HV1982 and the relative wearability was increased for about ten times under the load of 30N. XPS depth concentration profiles show an interfacial mixing between film and substrate, and compared with monoenergetic ion implantation, polyenergetic ion implanted layer have an even N/B distribution. Combined with XPS and IR analysis results, It can conclude that boron exists in the form of boron nitride and first as a-BN or h-BN, with the depth decreasing, it has a tendency to transform to c-BN.

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