Irradiation of PMMA with high energy light ions: The depth distribution for volatile reaction-product emission

1994 ◽  
Vol 128 (4) ◽  
pp. 277-285 ◽  
Author(s):  
A. Schmoldt ◽  
L. T. Chadderton ◽  
D. Fink
Keyword(s):  
Depth Distribution ◽  
High Energy ◽  
Volatile Reaction Product ◽  
Light Ions

Damage in High Energy Light Ions Irradiated Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
P. Leveque ◽  
S. Godey ◽  
P.O. Renault ◽  
E. Ntsoenzok ◽  
J.F. Barbot
Keyword(s):  
Silicon Carbide ◽  
Surface Layer ◽  
Energy Transfer ◽  
High Energy ◽  
Alpha Particles ◽  
Defect Production ◽  
Majority Carrier ◽  
Reflectivity Spectra ◽  
Light Ions ◽  
Compensation Layer

AbstractCommercial n-type 4H-SiC wafers were implanted with doses of MeV alpha particles, high enough to cause majority carrier modification. Analysis of infrared reflectivity spectra shows that the implanted crystals can be divided into three layers: a surface layer of about 30 nm followed by a compensation layer where the energy transfer of the incident particles is low and an overdoping layer in the region of maximum defect production, i.e. near the theoretical mean range of ions Rp

Cathodoluminescence Study of Hydrothermal Zn1-xMgxO Alloy Crystals

2006 ◽  
Vol 957 ◽  
Author(s):  
Julio Mass ◽  
Manuel Avella ◽  
Juan Jiménez ◽  
Michael Callahan ◽  
E. Grant ◽  
...  
Keyword(s):  
Depth Distribution ◽  
Energy Shift ◽  
High Energy ◽  
Growth Sector ◽  
Spectral Parameters ◽  
Luminescence Emission ◽  
Acceleration Voltage ◽  
Marked Dependence ◽  
Excitonic Luminescence ◽  
Cathodoluminescence Study

ABSTRACTHydrothermal ZnMgO crystals were studied by cathodoluminescence. The high energy shift of the excitonic luminescence demonstrates the Mg incorporation in the ZnO lattice in at a few percent. The spectral parameters of the luminescence emission show a marked dependence of the incorporation of defects and Mg on the growth facet. This growth sector selectivity shows similar trends to those observed in hydrothermal ZnO crystals. The in depth distribution of Mg was studied varying the acceleration voltage of the excitation e-beam, showing a slight accumulation of Mg close to the surface.

scholarly journals A Bragg grating embedded in a slab waveguide fabricated by the implantation of high-energy light ions in KLTN substrate

2013 ◽  
Vol 115 (1) ◽  
pp. 143-147 ◽  
Author(s):  
Sagi Frishman ◽  
Alexander Gumennik ◽  
Har’el Ilan ◽  
Aharon J. Agranat
Keyword(s):  
High Energy ◽  
Slab Waveguide ◽  
Bragg Grating ◽  
Light Ions

Depth distribution of defects and impurities in diamond and cubic boron nitride after high-energy ion implantation

1989 ◽  
Vol 115 (2) ◽  
pp. 427-435 ◽  
Author(s):  
A. F. Burenkov ◽  
V. S. Varychenko ◽  
A. M. Zaitsev ◽  
F. F. Komarov ◽  
G. G. Konoplyanik ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Implantation ◽  
Depth Distribution ◽  
Cubic Boron Nitride ◽  
High Energy ◽  
Defects And Impurities

scholarly journals STUDIES AND APPLICATION OF BENT CRYSTALS FOR BEAM STEERING AT 70 GEV IHEP ACCELERATOR

2010 ◽  
Vol 25 (supp01) ◽  
pp. 86-97
Author(s):  
A.G. AFONIN ◽  
V.T. BARANOV ◽  
G.I. BRITVICH ◽  
V.N. CHEPEGIN ◽  
YU.A. CHESNOKOV ◽  
...  
Keyword(s):  
Beam Steering ◽  
High Energy ◽  
Proton Synchrotron ◽  
Beam Extraction ◽  
Reflection Effect ◽  
Light Ions ◽  
Volume Reflection ◽  
High Energy Collider ◽  
Major Attention ◽  
Bent Crystals

This report overviews studies accomplished in the U70 proton synchrotron of IHEP-Protvino during the recent two decades. Major attention is paid to a routine application of bent crystals for beam extraction from the machine. It has been confirmed experimentally that efficiency of beam extraction with a crystal deflector of around 85% is well feasible for a proton beam with intensity up to 1012 protons per cycle. Another trend is to use bent crystals for halo collimation in a high energy collider. New promising options emerge for, say, LHC and ILC based on the "volume reflection" effect, which has been discovered recently in machine study runs at U70 of IHEP (50 GeV) and SPS of CERN (400 GeV). Perspectives to use bent crystals for extraction of light ions from the U70 accelerator are also disclosed.

Damage Accumulation and Annealing in Ion Irradiated Silicon

1990 ◽  
Vol 201 ◽  
Author(s):  
F. Priolo ◽  
A. Battaglia ◽  
C. Spinella ◽  
E. Rimini
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Heavy Ions ◽  
Damage Accumulation ◽  
Ion Irradiation ◽  
High Energy ◽  
Doping Content ◽  
Damage Morphology ◽  
Light Ions

AbstractThe evolution of pre-existing damage structures in Si under high energy ion irradiation is discussed. Different initial morphologies are investigated: a sample partially pre-damaged with heavy ions and a sample partially pre-damaged with light ions are compared within them and with an undamaged single crystal. It is shown that ion irradiation can produce either damage accumulation, in the form of amorphous regions, or damage annealing depending on the pre-existing damage morphology, on the substrate temperature, and on the doping content in the irradiated layer. These data are discussed and interpreted on the basis of the existing models on ion induced amorphization and crystallization.

Small angle proton-proton correlations in collisions of high energy light ions with carbon and gold nuclei

1990 ◽  
Vol 243 (4) ◽  
pp. 341-345 ◽  
Author(s):  
V.A. Budilov ◽  
A. Filipkowski ◽  
A. Golembiewski ◽  
V.I. Ilyuschenko ◽  
A. Korejwo ◽  
...  
Keyword(s):  
Small Angle ◽  
High Energy ◽  
Proton Proton ◽  
Light Ions

Photoluminescence and reflectivity studies of high energy light ions irradiated polymethyl methacrylate films

2017 ◽  
Vol 73 ◽  
pp. 550-554 ◽  
Author(s):  
Madhu Lata Bharti ◽  
Fouran Singh ◽  
R.C. Ramola ◽  
Veena Joshi
Keyword(s):  
Polymethyl Methacrylate ◽  
High Energy ◽  
Light Ions

FORMATION OF HIGH ENERGY MICROBEAMS AND THEIR APPLICATION TO MICROELECTRONICS

1992 ◽  
Vol 02 (02) ◽  
pp. 107-128 ◽  
Author(s):  
MIKIO TAKAI
Keyword(s):  
Three Dimensional ◽  
Quadrupole Doublet ◽  
Spot Size ◽  
High Energy ◽  
Beam Optics ◽  
X Ray ◽  
Beam Spot Size ◽  
Radiation Damages ◽  
Magnetic Quadrupole ◽  
Light Ions

Scanning nuclear microprobes using Rutherford backscattering (RBS) and particle-induced X-ray emission (PIXE) with light ions have been formed using variable objective slits and a magnetic quadrupole doublet. Beam optics, focusing techniques, factors limiting the minimum beam-spot size, and data acquisition systems are discussed. Two- and three-dimensional RBS mapping and channeling contrast mapping of processed semiconductor layers such as multilayered wiring and focused ion-implanted layers are demonstrated. Problems with microbeam analysis such as radiation damages due to the probe beams are discussed.

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