scholarly journals STUDIES AND APPLICATION OF BENT CRYSTALS FOR BEAM STEERING AT 70 GEV IHEP ACCELERATOR

2010 ◽  
Vol 25 (supp01) ◽  
pp. 86-97
Author(s):  
A.G. AFONIN ◽  
V.T. BARANOV ◽  
G.I. BRITVICH ◽  
V.N. CHEPEGIN ◽  
YU.A. CHESNOKOV ◽  
...  
Keyword(s):  
Beam Steering ◽  
High Energy ◽  
Proton Synchrotron ◽  
Beam Extraction ◽  
Reflection Effect ◽  
Light Ions ◽  
Volume Reflection ◽  
High Energy Collider ◽  
Major Attention ◽  
Bent Crystals

This report overviews studies accomplished in the U70 proton synchrotron of IHEP-Protvino during the recent two decades. Major attention is paid to a routine application of bent crystals for beam extraction from the machine. It has been confirmed experimentally that efficiency of beam extraction with a crystal deflector of around 85% is well feasible for a proton beam with intensity up to 1012 protons per cycle. Another trend is to use bent crystals for halo collimation in a high energy collider. New promising options emerge for, say, LHC and ILC based on the "volume reflection" effect, which has been discovered recently in machine study runs at U70 of IHEP (50 GeV) and SPS of CERN (400 GeV). Perspectives to use bent crystals for extraction of light ions from the U70 accelerator are also disclosed.

scholarly journals Observation of channeling and volume reflection in bent crystals for high-energy negative particles

2009 ◽  
Vol 681 (3) ◽  
pp. 233-236 ◽  
Author(s):  
W. Scandale ◽  
A. Vomiero ◽  
E. Bagli ◽  
S. Baricordi ◽  
P. Dalpiaz ◽  
...  
Keyword(s):  
High Energy ◽  
Volume Reflection ◽  
Bent Crystals

scholarly journals Angular asymmetry of the nuclear interaction probability of high energy particles in short bent crystals

2020 ◽  
Vol 80 (1) ◽  
Author(s):  
W. Scandale ◽  
F. Cerutti ◽  
L. S. Esposito ◽  
M. Garattini ◽  
S. Gilardoni ◽  
...  
Keyword(s):  
Silicon Crystal ◽  
Nuclear Interaction ◽  
High Energy ◽  
Planar Channeling ◽  
The North ◽  
Volume Reflection ◽  
Bent Crystals ◽  
First Time ◽  
High Energy Particles ◽  
Hadron Beam

AbstractThe rate of inelastic nuclear interactions in a short bent silicon crystal was precisely measured for the first time using a 180 GeV/c positive hadron beam produced in the North Experimental Area of the CERN SPS. An angular asymmetry dependence on the crystal orientation in the vicinity of the planar channeling minimum has been observed. For the inspected crystal, this probability is about $$\sim 20\%$$∼20% larger than in the amorphous case because of the atomic density increase along the particle trajectories in the angular range of volume reflection, whose dimension is determined by the crystal bending angle. Instead, for the opposite angular orientation with respect to the planar channeling, there is a smaller probability excess of $$\sim 4\%$$∼4%.

scholarly journals Beam steering performance of bent silicon crystals irradiated with high-intensity and high-energy protons

2019 ◽  
Vol 79 (11) ◽  
Author(s):  
W. Scandale ◽  
M. Calviani ◽  
M. D’Andrea ◽  
L. S. Esposito ◽  
M. Garattini ◽  
...  
Keyword(s):  
High Intensity ◽  
Beam Steering ◽  
Hadron Collider ◽  
Pulse Length ◽  
High Energy ◽  
Proton Synchrotron ◽  
Super Proton Synchrotron ◽  
Silicon Crystals ◽  
Performance Reduction ◽  
Before And After

AbstractBeam steering performance of bent silicon crystals irradiated with high-intensity and high-energy protons has been studied. In particular, crystals of the type used for collimation and extraction purposes in the Large Hadron Collider and the Super Proton Synchrotron at CERN have been irradiated at the HiRadMat CERN facility with $$2.5 \times 10^{13}$$2.5×1013 440 GeV/c protons, with a pulse length of 7.2 $$\upmu $$μs. The purpose is to study possible changes in bending angle and channeling efficiency due to thermo-mechanical stresses in case of accidental irradiation during accelerator operations. A comparison between measurements performed before and after the irradiation does not show any appreciable performance reduction in either crystal.

INELASTIC PHOTOPRODUCTION OF W-BOSON

1998 ◽  
Vol 13 (25) ◽  
pp. 2013-2020
Author(s):  
S. M. KHAIRUL ALAM ◽  
A. M. HARUN AR RASHID
Keyword(s):  
Differential Cross Section ◽  
Cross Section ◽  
W Boson ◽  
Electric Quadrupole ◽  
Parton Model ◽  
High Energy ◽  
Electric Quadrupole Moment ◽  
Photoproduction Process ◽  
Quark Parton Model ◽  
High Energy Collider

We study the WWγ vertex through the process γq→Wq′ where q denotes the quark at a future high energy collider. The differential cross-section for the photoproduction process γq→Wq′ is computed with both anomalous magnetic moment κ and electric quadrupole moment λ for the W-boson. The deep inelastic photoproduction of W± is also calculated in a quark-parton model.

Damage in High Energy Light Ions Irradiated Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
P. Leveque ◽  
S. Godey ◽  
P.O. Renault ◽  
E. Ntsoenzok ◽  
J.F. Barbot
Keyword(s):  
Silicon Carbide ◽  
Surface Layer ◽  
Energy Transfer ◽  
High Energy ◽  
Alpha Particles ◽  
Defect Production ◽  
Majority Carrier ◽  
Reflectivity Spectra ◽  
Light Ions ◽  
Compensation Layer

AbstractCommercial n-type 4H-SiC wafers were implanted with doses of MeV alpha particles, high enough to cause majority carrier modification. Analysis of infrared reflectivity spectra shows that the implanted crystals can be divided into three layers: a surface layer of about 30 nm followed by a compensation layer where the energy transfer of the incident particles is low and an overdoping layer in the region of maximum defect production, i.e. near the theoretical mean range of ions Rp

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