Chemically deposited p-type MoBiCuS4 thin film for photoelectrochemical cell applications

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

MRS Proceedings ◽

10.1557/proc-403-489 ◽

1995 ◽

Vol 403 ◽

Cited By ~ 1

Author(s):

T. S. Hayes ◽

F. T. Ray ◽

K. P. Trumble ◽

E. P. Kvam

Keyword(s):

Thin Film ◽

Thin Films ◽

Silicon Carbide ◽

Ohmic Contacts ◽

Microstructure Development ◽

P Type ◽

Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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A Multi Objective Evolutionary Algorithm for the Parameters Extraction of Organic Thin Film Transistors Models

Electronics ◽

10.3390/electronics10080939 ◽

2021 ◽

Vol 10 (8) ◽

pp. 939

Author(s):

Rosario Schiano Lo Moriello ◽

Davide Ruggiero ◽

Leopoldo Angrisani ◽

Enzo Caputo ◽

Francesco de Pandi ◽

...

Keyword(s):

Thin Film ◽

Evolutionary Algorithm ◽

Design Stage ◽

Model Parameters ◽

Organic Transistors ◽

Organic Thin Film ◽

Multi Objective ◽

Application Fields ◽

Channel Lengths ◽

P Type

Thanks to their peculiar features, organic transistors are proving to be a valuable alternative to traditional semiconducting devices in several application fields; however, before releasing their exploitation, simulating their behaviour through adequate circuital models could be advisable during the design stage of electronic circuits and/or boards. Consequently, accurately extracting the parameter value of those models is fundamental to developing useful libraries for hardware design environments. To face the considered problem, the authors present a method based on successive application of Single- and Multi-Objective Evolutionary Algorithm for the optimal tuning of model parameters of organic transistors on thin film (OTFT). In particular, parameters are first roughly estimated to assure the best fit with the experimental transfer characteristics; the estimates are successively refined through the multi-objective strategy by also matching the values of the experimental mobility. The performance of the method has been assessed by estimating the parameters value of both P-type and N-type OTFTs characterized by different values of channel lengths; the obtained results evidence that the proposed method can obtain suitable parameters values for all the considered channel lengths.

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Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c18915 ◽

2021 ◽

Vol 13 (3) ◽

pp. 4156-4164

Author(s):

Mari Napari ◽

Tahmida N. Huq ◽

David J. Meeth ◽

Mikko J. Heikkilä ◽

Kham M. Niang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Surface Passivation ◽

Cu2o Thin Film ◽

P Type

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Organic solar cells employing magnetron sputtered p-type nickel oxide thin film as the anode buffer layer

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2010.08.004 ◽

2010 ◽

Vol 94 (12) ◽

pp. 2332-2336 ◽

Cited By ~ 74

Author(s):

Sun-Young Park ◽

Hye-Ri Kim ◽

Yong-Jin Kang ◽

Dong-Ho Kim ◽

Jae-Wook Kang

Keyword(s):

Thin Film ◽

Solar Cells ◽

Nickel Oxide ◽

Buffer Layer ◽

Organic Solar Cells ◽

Oxide Thin Film ◽

Anode Buffer Layer ◽

P Type ◽

Type Nickel ◽

Nickel Oxide Thin Film

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p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

Journal of Nanomaterials ◽

10.1155/2016/8219326 ◽

2016 ◽

Vol 2016 ◽

pp. 1-6 ◽

Cited By ~ 4

Author(s):

Daiki Itohara ◽

Kazato Shinohara ◽

Toshiyuki Yoshida ◽

Yasuhisa Fujita

Keyword(s):

Thin Film ◽

Arc Discharge ◽

Thin Film Transistor ◽

Chamber Pressure ◽

Zno Nanoparticle ◽

Zno Nps ◽

Lower Chamber ◽

Hall Effect Measurements ◽

Particle Process ◽

P Type

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.

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