Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 63-66 ◽  
Author(s):  
Guoli L. Sun ◽  
Irina G. Galben-Sandulache ◽  
Thierry Ouisse ◽  
Jean Marc Dedulle ◽  
Michel Pons ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Seeded Growth ◽  
Grown Layer ◽  
Continuous Feed ◽  
Transport Technique

The Continuous Feed-Physical Vapor Transport Technique (CF-PVT) was optimized by considering the heating, thermal insulation and the geometry of growth cavity. The effects of seeds on the surface morphology of the grown layer have been discussed. We successfully grew 3C-SiC bulk with a diameter of 7.0 mm and 3.3 mm in height with a high growth rate of 0.8 mm/h by the CF-PVT technique.

A Technique For Rapid Thick Film Sic Epitaxial Growth

1997 ◽  
Vol 483 ◽  
Author(s):  
I. Khlebnikov ◽  
T. S. Sudarshan ◽  
V. Madangarli ◽  
M. A. Capano
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Structural Quality ◽  
Epitaxial Layers ◽  
Rocking Curve ◽  
X Ray

AbstractIn this paper we demonstrate the growth of thick SiC epitaxial layers (≥100 μm) of good structural quality at a high growth rate (>100 μm/hr) by controlling the vapor dynamics during conventional physical vapor transport (PVT) process. We propose that our PVT technique be used to ‘repair’ or ‘heal’ commercially available substrates dominated by micropipes, by ‘filling up’ the micropipes through crystal growth inside the micropipe. Extensive experiments performed on thick SiC epitaxial layers grown on Lely substrates indicate that the thick epitaxial layers are of single polytype of high structural quality, with a single peak X-ray rocking curve of less than 12 arcsecs FWHM.

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

2011 ◽  
Vol 679-680 ◽  
pp. 169-172
Author(s):  
Georgios Zoulis ◽  
Jian Wu Sun ◽  
Irina G. Galben-Sandulache ◽  
Guoli L. Sun ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Small Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Optical Investigation ◽  
Continuous Feed ◽  
Transport Technique

We present the results of an optical investigation performed using low temperature photomuminescence and Raman spectroscopy on bulk 3C-SiC samples grown with the Continuous-Feed Physical Vapor Transport technique, using a small diameter neck to filter the defects and improve the as-grown material.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals

2012 ◽  
Vol 717-720 ◽  
pp. 1291-1294 ◽  
Author(s):  
Mamoru Imade ◽  
Yusuke Konishi ◽  
Hideo Takazawa ◽  
Kosuke Murakami ◽  
Hiroki Imabayashi ◽  
...  
Keyword(s):  
Growth Rate ◽  
Gallium Nitride ◽  
Single Crystals ◽  
Growth Habit ◽  
High Growth ◽  
High Growth Rate ◽  
Flux Growth ◽  
Seeded Growth ◽  
Flux Method ◽  
Flux Composition

Seeded growth of gallium nitride (GaN) crystals on a spontaneously nucleated small GaN by the Na flux method was performed. In this study, we attempted to control the growth habit by changing the flux composition (Ga/Na) and by introducing a small amount of additives (Ca and Li). Our experiment clarified that a low Ga composition was preferred to grow high-crystallinity prismatic GaN crystals with a high growth rate. Furthermore, the transparent GaN single crystals with prism shape could be grown by the addition of Ca and Li.

Investigation of silicon carbide physical vapor transport growth on the C-terminated face of 6H seeds

2000 ◽  
Vol 640 ◽  
Author(s):  
D. Schulz ◽  
J. Doerschel ◽  
K. Irmscher ◽  
H.-J. Rost ◽  
D. Siche ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Step Bunching ◽  
Sublimation Growth

ABSTRACTSublimation growth of 6H-SiC has been studied with respect to surface morphology, growth temperature, supersaturation and growth rate. Growth was performed on the C-terminated face of 6H seeds mainly and for comparison also the Si-terminated face was used. Step bunching is observed dependent on different parameters and is strongly influenced by the seed orientation. The growth rate of 4H on the C-face is found to be higher than the rate of 6H grown on the Siface.

Growth Rate and Surface Morphology of 4H-SiC Single Crystal Grown under Various Supersaturations Using Si-C Solution

2013 ◽  
Vol 740-742 ◽  
pp. 23-26 ◽  
Author(s):  
Naoyoshi Komatsu ◽  
Takeshi Mitani ◽  
Tetsuo Takahashi ◽  
Masayuki Okamura ◽  
Tomohisa Kato ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Single Crystal ◽  
Growth Temperature ◽  
Crystallization Front ◽  
Stable Solution ◽  
High Growth ◽  
High Growth Rate ◽  
Solute Element ◽  
Adequate Condition

We have investigated growth rate and surface morphology of 4H-SiC single crystal grown from Si-C solution with various supersaturation levels at growth temperature in the range from 1840 to 2140 °C. The growth rate depends linearly on the amount of supersaturated carbon, irrespective of the growth temperature. This indicates that the growth is limited by the transfer of solute element onto the crystallization front. The adequate condition for stable solution growth are discussed with respect to high growth rate and surface morphology.

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

2011 ◽  
Vol 679-680 ◽  
pp. 115-118 ◽  
Author(s):  
Jawad ul Hassan ◽  
Peder Bergman ◽  
Anne Henry ◽  
Erik Janzén
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Surface Morphology ◽  
High Growth ◽  
Lower Surface ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Homoepitaxial Growth ◽  
Order Of Magnitude ◽  
Reduced Surface

The effect of different C/Si ratio on the surface morphology has been studied to optimize the on-axis homoepitaxial growth conditions on 4H-SiC substrates to improve the surface roughness of epilayers. The overall surface roughness is found to decrease with decreasing C/Si ratio. An order of magnitude lower surface roughness has been observed using C/Si ratio = 0.8 without disturbing the polytype stability in the epilayer. A high growth rate of 10 µm/h was achieved without introducing 3C inclusions. The epilayers grown at higher growth rate with C/Si ratio = 1 also had improvements in the surface roughness. 100% 4H polytype was maintained in the epilayers grown with C/Si ratio in the range of 1.2 to 0.8 and with high growth rate of 10 µm/h.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 354
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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