AbstractA ternary compound results from the fast radiative processing of Ni/Ti bilayers on Si<100> substrates. In the Ti-Ni-Si system, Ni is the dominant moving specie at low temperatures while Si starts to diffuse at 575°C. For bilayers with Ti in excess, the final product,above 750°C, is a mixture of ternary compound and TiSi2 whereas excess Ni leads to a layer of NiSi between the substrate and the ternary layer, at tempera-tures below 700° C.
ABSTRACTA new Rapid Thermal Annealing technique has been developed which uses very small samples of low melting elements and eutectic alloys to standardize temperature measurements. Temperatures of thin films during anneal are shown to lie within −3°C to +13°C of nominal for measured short anneal times using a special sample geometry. Results of annealing Ge/Ni/GaAs and Au/Ge/Ni/GaAs at 200°C and 250°C are presented. Rutherford backscattering is used to analyze the films and the resulting channeling spectra show that Ge consumption follows parabolic kinetics, with an activation energy estimate of ≈ 0.7eV. The data is consistent with a controlling process of fast Ni diffusion through grain boundaries at these low temperatures. We expect that a Ni2Ge phase is being formed preferentially, along with a NixGaAs phase at the GaAs/Ni interface. In this contact metal system Au interacts only minimally for the times and temperatures studied. Our results agree with those of previous workers who studied Ni diffusion during NixGaAs phase formation at comparable temperatures.
In this article, based on nucleation and growth mechanism of films, different process conditions of rapid thermal annealing (RTA) had been investigated to attain different orientation and the crystallinity of PZT film. At first, the PZT films had been fabricated by magnetron sputtering on Si/SiO2/Ti/Pt substrates, then crystallized by different stepped rapid thermal annealing process. X-ray diffraction (XRD) was used to analyze the crystal structures of the films and scanning electron microscope (SEM) was used to analyze the surface morphology of the films. As a conclusion about the research is that it is good for controlling the crystallographic orientation and enhancing the crystallinity of PZT film by different stepped rapid thermal annealing process
AbstractSol-gel derived PZT films were successfully prepared from precursor solutions based on lead acetate and Zr/Ti alkoxides. A pyrochlore phase was observed in films fired at low temperatures, while single-phase perovskite films were obtained at temperatures above 725C. The dielectric constant increased to above 1000 when there was a higher proportion of perovskite than pyrochlore. The films were essentially fatigue-free up to 108 cycles and exhibited a low aging rate of 5.7% / decade-sec.
Effects of the Introduction of UV Irradiation and Rapid Thermal Annealing Process to Sol-Gel Method Derived Ferroelectric Sr0.9Bi2.1Ta1.8Nb0.2O9Thin Films on Crystallization and Dielectric/Electrical Properties