Analysis of Factors in the Nanoscale Physical and Electrical Characterization of High-K Materials by Conductive Atomic Force Microscope

Photosystem II (PSII) is different from all other reaction centers in that it splits water to evolve oxygen and hydrogen ions. This unique ability to evolve oxygen is partly due to three oxygen evolving polypeptides (OEPs) associated with the PSII complex. Freeze etching on grana derived insideout membranes revealed that the OEPs contribute to the observed tetrameric nature of the PSIl particle; when the OEPs are removed, a distinct dimer emerges. Thus, the surface of the PSII complex changes dramatically upon removal of these polypeptides. The atomic force microscope (AFM) is ideal for examining surface topography. The instrument provides a topographical view of individual PSII complexes, giving relatively high resolution three-dimensional information without image averaging techniques. In addition, the use of a fluid cell allows a biologically active sample to be maintained under fully hydrated and physiologically buffered conditions. The OEPs associated with PSII may be sequentially removed, thereby changing the surface of the complex by one polypeptide at a time.

Download Full-text

Case Studies in Atomic Force Probe Analysis

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0153 ◽

2006 ◽

Author(s):

Randal Mulder ◽

Sam Subramanian ◽

Tony Chrastecky

Keyword(s):

Failure Analysis ◽

Case Studies ◽

Light Emission ◽

Electrical Characterization ◽

Logic Circuits ◽

Contrast Imaging ◽

Atomic Force ◽

Measuring Surface ◽

Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

Download Full-text

Digital light processing in a hybrid atomic force microscope: In Situ, nanoscale characterization of the printing process

Additive Manufacturing ◽

10.1016/j.addma.2020.101744 ◽

2021 ◽

Vol 38 ◽

pp. 101744

Author(s):

Callie I. Higgins ◽

Tobin E. Brown ◽

Jason P. Killgore

Keyword(s):

Atomic Force Microscope ◽

Digital Light Processing ◽

Printing Process ◽

Atomic Force ◽

Nanoscale Characterization

Download Full-text

Anin situatomic force microscope for normal-incidence nanofocus X-ray experiments

Journal of Synchrotron Radiation ◽

10.1107/s1600577516011437 ◽

2016 ◽

Vol 23 (5) ◽

pp. 1110-1117 ◽

Cited By ~ 3

Author(s):

M. V. Vitorino ◽

Y. Fuchs ◽

T. Dane ◽

M. S. Rodrigues ◽

M. Rosenthal ◽

...

Keyword(s):

Thin Film ◽

Atomic Force Microscope ◽

High Speed ◽

Normal Incidence ◽

Organic Thin Film ◽

X Ray ◽

Atomic Force ◽

Synchrotron Beamlines

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.

Download Full-text