The Optical Characteristics of the Light Emitting Device with TPD and PBD Thin Films

Author(s):  
Dong-Myung Shin ◽  
Jung-Hyun Kim
1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Yiyue Zhang ◽  
Masoumeh Keshavarz ◽  
Elke Debroye ◽  
Eduard Fron ◽  
Miriam Candelaria Rodríguez González ◽  
...  

Abstract Lead halide perovskites have attracted tremendous attention in photovoltaics due to their impressive optoelectronic properties. However, the poor stability of perovskite-based devices remains a bottleneck for further commercial development. Two-dimensional perovskites have great potential in optoelectronic devices, as they are much more stable than their three-dimensional counterparts and rapidly catching up in performance. Herein, we demonstrate high-quality two-dimensional novel perovskite thin films with alternating cations in the interlayer space. This innovative perovskite provides highly stable semiconductor thin films for efficient near-infrared light-emitting diodes (LEDs). Highly efficient LEDs with tunable emission wavelengths from 680 to 770 nm along with excellent operational stability are demonstrated by varying the thickness of the interlayer spacer cation. Furthermore, the best-performing device exhibits an external quantum efficiency of 3.4% at a high current density (J) of 249 mA/cm2 and remains above 2.5% for a J up to 720 mA cm−2, leading to a high radiance of 77.5 W/Sr m2 when driven at 6 V. The same device also shows impressive operational stability, retaining almost 80% of its initial performance after operating at 20 mA/cm2 for 350 min. This work provides fundamental evidence that this novel alternating interlayer cation 2D perovskite can be a promising and stable photonic emitter.


2018 ◽  
Vol 5 (2) ◽  
pp. 171179 ◽  
Author(s):  
Bramaramba Gnapareddy ◽  
Sreekantha Reddy Dugasani ◽  
Junyoung Son ◽  
Sung Ha Park

DNA is considered as a useful building bio-material, and it serves as an efficient template to align functionalized nanomaterials. Riboflavin (RF)-doped synthetic double-crossover DNA (DX-DNA) lattices and natural salmon DNA (SDNA) thin films were constructed using substrate-assisted growth and drop-casting methods, respectively, and their topological, chemical and electro-optical characteristics were evaluated. The critical doping concentrations of RF ([RF] C , approx. 5 mM) at given concentrations of DX-DNA and SDNA were obtained by observing the phase transition (from crystalline to amorphous structures) of DX-DNA and precipitation of SDNA in solution above [RF] C . [RF] C are verified by analysing the atomic force microscopy images for DX-DNA and current, absorbance and photoluminescence (PL) for SDNA. We study the physical characteristics of RF-embedded SDNA thin films, using the Fourier transform infrared spectrum to understand the interaction between the RF and DNA molecules, current to evaluate the conductance, absorption to understand the RF binding to the DNA and PL to analyse the energy transfer between the RF and DNA. The current and UV absorption band of SDNA thin films decrease up to [RF] C followed by an increase above [RF] C . By contrast, the PL intensity illustrates the reverse trend, as compared to the current and UV absorption behaviour as a function of the varying [RF]. Owing to the intense PL characteristic of RF, the DNA lattices and thin films with RF might offer immense potential to develop efficient bio-sensors and useful bio-photonic devices.


1999 ◽  
Vol 40 (6) ◽  
pp. 285-293 ◽  
Author(s):  
Poopathy Kathirgamanathan ◽  
Vijendra Kandappu ◽  
Susumu Hara ◽  
Kanagarajah Chandrakumar ◽  
S.Leo Marianesan ◽  
...  

2021 ◽  
pp. 2101419
Author(s):  
Ping Liu ◽  
Wanqing Cai ◽  
Cong Zhao ◽  
Siwei Zhang ◽  
Pengbo Nie ◽  
...  

2017 ◽  
Vol 4 (5) ◽  
pp. 6365-6371 ◽  
Author(s):  
R. Prachachet ◽  
P. Buranasiri ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
S.Limwichean ◽  
...  

2000 ◽  
Vol 660 ◽  
Author(s):  
Xiang Zhou ◽  
Andreas Nollau ◽  
Jan Blochwitz ◽  
Martin Pfeiffer ◽  
Torsten Fritz ◽  
...  

ABSTRACTWe investigate the electrical properties and the OLED application of controlledly doped amorphous hole transporters. Thin films of starburst amine, 4,4',4“-tris(N,N-diphenyl- amino) triphenylamine (TDATA), doped by a fully fluorinated form of tetracyano- quinodimethane (F4-TCNQ), are characterized in situ by temperature dependent conductivity and Seebeck measurements. The conductivity and hole concentration increase with dopant concentration and are many orders of magnitude higher than those of undoped material. OLED devices with the layer sequence ITO/TDATA(200 nm)/Alq3(65 nm)/LiF(1 nm)/Al were fabricated. The use of p-doped TDATA thin films with high bulk conductivity and hole concentration reduces the resistance of the devices and leads to a thinner space charge layer which facilitates injection of holes from the ITO anode.


RSC Advances ◽  
2015 ◽  
Vol 5 (31) ◽  
pp. 24178-24187 ◽  
Author(s):  
Shashikant D. Shinde ◽  
S. K. Date ◽  
Alka V. Deshmukh ◽  
Amit Das ◽  
Pankaj Misra ◽  
...  

Aluminium dopant segregation from AD-xAZO thin films on annealing is established by structural, optical and electrical characterizations.


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