Cathode Unit of Magnetron Sputter for High Target Utilization

2009 ◽  
Vol 514 (1) ◽  
pp. 201/[531]-208/[538]
Author(s):  
Jang Sick Park ◽  
Lee Soon Park ◽  
Yun-Su Lee ◽  
Won Geon Lee ◽  
Min Ki Jung
Keyword(s):  
Cathode Unit ◽  
Magnetron Sputter

Growth and characterization of radio frequency magnetron sputter-deposited zinc stannate, Zn2SnO4, thin films

2002 ◽  
Vol 92 (1) ◽  
pp. 310-319 ◽  
Author(s):  
David L. Young ◽  
Helio Moutinho ◽  
Yanfa Yan ◽  
Timothy J. Coutts
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Zinc Stannate ◽  
Magnetron Sputter ◽  
Sputter Deposited

Energetic particle fluxes in magnetron sputter deposition of a-Si:H

1991 ◽  
Vol 137-138 ◽  
pp. 783-786 ◽  
Author(s):  
Alan M. Myers ◽  
James R. Doyle ◽  
G. Jeff Feng ◽  
Nagi Maley ◽  
David L. Ruzic ◽  
...  
Keyword(s):  
Energetic Particle ◽  
Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Particle Fluxes

Study of the surface characteristics of magnetron-sputter calcium phosphate coatings

1994 ◽  
Vol 28 (12) ◽  
pp. 1477-1484 ◽  
Author(s):  
J. G. C. Wolke ◽  
K. van Dijk ◽  
H. G. Schaeken ◽  
K. de Groot ◽  
J. A. Jansen
Keyword(s):  
Calcium Phosphate ◽  
Surface Characteristics ◽  
Phosphate Coatings ◽  
Magnetron Sputter ◽  
Calcium Phosphate Coatings

The Influence of Annealing Temperature on the Characteristics of 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 263-266
Author(s):  
Chien Chen Diao ◽  
Chia Ching Wu ◽  
Cheng Fu Yang ◽  
Chao Chin Chan
Keyword(s):  
Thin Films ◽  
Deposition Process ◽  
Leakage Currents ◽  
Cross Sectional ◽  
Si Substrates ◽  
Polarization Characteristics ◽  
Magnetron Sputter ◽  
Xrd Patterns ◽  
Top View ◽  
Better Than

In this study, 0.95 (Na0.5Bi0.5)TiO3-0.05 BaTiO3 + 1 wt% Bi2O3 (NBT-BT3) composition sintered at 1200oC for 2h is used as target to deposit the NBT-BT3 thin films. The excess 1wt% Bi2O3 is used to compensate the vaporization of Bi2O3 during the deposition process. Ferroelectric NBT-BT3 thin films are deposited on SiO2/Si and Pt/Ti/SiO2/Si substrates using RF magnetron sputter method using the ceramic target fabricated by ourselves. After depositing under the optimal parameters, the thin films are then heated by a conventional thermal annealing (CFA) process conducted in air at temperatures ranging from 600- 800oC for 60min. The morphologies of NBT- BT3 thin films are observed using SEM the crystalline structures of NBT-BT3 thin films are investigated using XRD patterns. The large memory window and stable leakage current density examination reveals that NBT-BT3 thin films annealed on 600oC are better than other thin films under different CTA temperatures. Finally, the top view and cross-sectional images of SEM, memory windows, leakage currents and polarization characteristics of NBT-BT3 thin films are also well developed.

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