The organometal halide perovskite (OHP) materials have attracted much attention throughout the world due to their superb optoelectronic properties. Tremendous progress has been made in the OHP based solar cells with increased efficiency from 3.8% to 24.2% within the last decade, benefiting
from efforts in the photovoltaic field. However, all the OHP solar cells with highest efficient are based on a normal mesoporous structure with TiO2 at the bottom, which needs high temperature process. The inverted planar structure OHP solar cells based on PEDOT:PSS suffer from low efficiency
(lower than 15%) and inferior stability due to degradation of PEDOT:PSS in ambient air. Herein, we employed sol–gel method to fabricate a NiOx nano film as the hole transporting layer for inverted OHP solar cells. The device performance based on PEDOT:PSS and NiOx
were systematically investigated. It was found that the perovskite films on NiOx film had larger grain size and thus lower defects) density. The Capacitance–Voltage measurement indicated that the device based on NiOx exhibited larger built-in potential, which significantly
enhanced the open-circuit potential of the OHP solar cells. Furthermore, the solar cell based on NiOx nano film exhibited excellent stability compared with the PEDOT:PSS based device, due to robust property of NiOx in ambient air.
Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells
