Monte Carlo calculation of X-ray depth profiles in Si substrate coated with films

A Monte Carlo simulation of an ordering phase transition in the surface region of a f.c.c.-type A 3 B binary alloy is reported. The main emphasis of this simulation is the evaluation of short and long-range-order correlations near the surface which are used for calculating X-ray intensities under grazing-incident-angle conditions. These calculations suggest effective ways of conducting surface diffraction experiments on order-disorder phase transitions. The simulation results are also compared with available experimental data.

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Monte Carlo Calculation of X-Rays Deposited Energy in CdZnTe Detector

Materials Science Forum ◽

10.4028/www.scientific.net/msf.555.141 ◽

2007 ◽

Vol 555 ◽

pp. 141-146 ◽

Cited By ~ 2

Author(s):

Srboljub J. Stanković ◽

M. Petrović ◽

M. Kovačević ◽

A. Vasić ◽

P. Osmokrović ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Calculation ◽

Absorbed Dose ◽

Detector Response ◽

X Rays ◽

X Ray ◽

Cdznte Detector ◽

Deposited Energy ◽

Photon Direction ◽

Cdznte Detectors

CdZnTe detectors have been employed in diagnostic X-ray spectroscopy. This paper presents the Monte Carlo calculation of X-ray deposited energy in a CdZnTe detector for different energies of photon beam. In incident photon direction, the distribution of absorbed dose as deposited energy in detector is determined. Based on the dependence of the detector response on the thickness and different Zn fractions, some conclusions about changes of the material characteristics could be drawn. Results of numerical simulation suggest that the CdZnTe detector could be suitable for X-ray low energy.

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Path-integral Monte Carlo calculation of the effects of thermal disorder in extended x-ray-absorption fine structure of copper

Physical Review B ◽

10.1103/physrevb.77.172304 ◽

2008 ◽

Vol 77 (17) ◽

Cited By ~ 20

Author(s):

S. a Beccara ◽

P. Fornasini

Keyword(s):

Monte Carlo ◽

Fine Structure ◽

Path Integral ◽

Monte Carlo Calculation ◽

Path Integral Monte Carlo ◽

X Ray ◽

Absorption Fine ◽

Thermal Disorder ◽

X Ray Absorption

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Characterization of Recoiling Oxygen in Silicon by Double-Crystal X-Ray Diffraction, Tem and Monte Carlo Simulation

MRS Proceedings ◽

10.1557/proc-69-197 ◽

1986 ◽

Vol 69 ◽

Author(s):

F. Cembali ◽

A. M. Mazzone ◽

M. Servidori

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

X Ray Diffraction ◽

Si Substrate ◽

Double Crystal ◽

X Ray ◽

Free Carriers ◽

Anomalous Formation

The widespread use of through-oxide implants in Si-MOS technology has prompted many studies to characterize the behaviour of oxygen recoiling from the passivating SiO2 layer into the Si substrate. These studies have given support for the idea that an anomalous formation of defects, which alter the profile of the implanted impurity and the mobility of the free carriers, is connected with the oxygen recoils.

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A Monte Carlo calculation of the interparticle interference in small-angle X-ray scattering

Journal of Applied Crystallography ◽

10.1107/s002188988800826x ◽

1988 ◽

Vol 21 (6) ◽

pp. 953-959 ◽

Cited By ~ 2

Author(s):

S. R. Hubbard ◽

S. Doniach

Keyword(s):

Monte Carlo ◽

Small Angle ◽

Monte Carlo Calculation ◽

X Ray ◽

X Ray Scattering ◽

Interparticle Interference ◽

Ray Scattering

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A Monte Carlo calculation of the x-ray production from multilayer samples

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100086970 ◽

1991 ◽

Vol 49 ◽

pp. 532-533

Author(s):

T. D. Ly ◽

D. G. Howitt

Keyword(s):

Monte Carlo ◽

Layered Structure ◽

Electron Microprobe ◽

Monte Carlo Calculation ◽

Monte Carlo Program ◽

Step Size ◽

Homogeneous Sample ◽

X Ray ◽

Microstructural Effects ◽

Signal Production

The X ray generation and absorption from a sample in an SEM or Electron Microprobe depends upon the geometry as well as the composition. Various schemes for calculating the X-ray signal from a homogeneous sample have been developed but few have addressed the problem associated with the presence of distinct microstructures. We have developed a Monte Carlo program to calculate the signal production from a multilayer sample as a first step to the incorporation of microstructural effects.The X-ray production from a layered structure is different from a homogeneous sample because the signal production and absorption are discontinuous. The differences can be calculated if the layer thicknesses and positions can be taken into account. The principle behind the calculation we have undertaken is the continuously monitor the energy and position of the electron in the specimen. Each trajectory is calculated in the usual stepwise manner except that the step size and scattering probability are continuously adjusted to accommodate the scale of the microstructure.

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Angle-Resolved X-Ray Depth Profiling: Interpretation of Angleresolved Profiles Using a Monte Carlo Approach

Microscopy and Microanalysis ◽

10.1017/s1431927600016238 ◽

1999 ◽

Vol 5 (S2) ◽

pp. 582-583

Author(s):

D.K. Wilkinson ◽

M. Prutton ◽

D.A. Loveday

Keyword(s):

Monte Carlo ◽

Electron Scattering ◽

Photoelectron Spectroscopy ◽

Depth Profiling ◽

Incident Beam ◽

Angle Of Incidence ◽

X Rays ◽

X Ray ◽

Interaction Volume ◽

Depth Profiles

A technique has been developed for the interpretation of composition depth profiles from angleresolved x-ray data using a Monte Carlo electron scattering simulation. Conventional methods for the interpretation of angle-resolved depth profiles used in the fields of x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) assume that the outgoing signal is exponentially attenuated along its path. This assumption if not valid for angle-resolved x-ray techniques, as the x-ray signal is dependent on both the paths of the incident electrons and the path of the emitted x-rays. In this case, while the latter can be treated using an exponential attenuation, the path of the incident beam is more complex and corresponds to the well known “pear-shaped” interaction volume. In order to reliably interpret angle-resolved depth profiles in which the angle of the incident beam is varied, it is necessary to be able to obtain the distribution of x-ray emission within the sample for any angle of incidence.

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