Electric field induced changes in the coercivity of a thin-film ferromagnet

2011 ◽  
Vol 44 (30) ◽  
pp. 305001 ◽  
Author(s):  
C Fowley ◽  
K Rode ◽  
K Oguz ◽  
H Kurt ◽  
J M D Coey
2021 ◽  
pp. 2101316
Author(s):  
Weinan Lin ◽  
Liang Liu ◽  
Qing Liu ◽  
Lei Li ◽  
Xinyu Shu ◽  
...  

1991 ◽  
Vol 202 (2) ◽  
pp. 213-220 ◽  
Author(s):  
Akiyoshi Takeno ◽  
Norimasa Okui ◽  
Tetsuji Kitoh ◽  
Michiharu Muraoka ◽  
Susumu Umemoto ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.


Author(s):  
Andong Wang ◽  
Caifeng Chen ◽  
Jilong Qian ◽  
Fan Yang ◽  
Lu Wang ◽  
...  

2007 ◽  
Vol 17 (03) ◽  
pp. 571-576
Author(s):  
A. GLADUN ◽  
V. LEIMAN ◽  
A. ARSENIN ◽  
O. MANNOUN ◽  
V. TARAKANOV

We present numerical investigation of anomalous internal photoelectric effect which is realized in thin film (< 100 nm) structures by surface plasmon (SP) excitation and its interaction with primary laser radiation. SP electric field gain and electron temperature in the SP field have been calculated.


2006 ◽  
Vol 20 (14) ◽  
pp. 821-833 ◽  
Author(s):  
ARIF NESRULLAJEV ◽  
ŞENER OKTIK

In this work, the effect of thin films on the thermotropic and thermo-optical properties and peculiarities of the phase transitions between the smectic A and isotropic liquid have been investigated. Peculiarities of the heterophase regions of the straight smectic A-isotropic liquid and reverse isotropic liquid-smectic A phase transitions have been studied. Change of morphologic properties of the heterophase regions, shift of the phase transition temperatures and the change of temperature widths of these heterophase regions under thin film influence have been observed.


2004 ◽  
Vol 84 (3) ◽  
pp. 440-442 ◽  
Author(s):  
Tetsuo Tsutsui ◽  
Masaya Terai

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