Fluorine plasma treatment induced deep level traps and their effect on current transportation in Al0.83In0.17N/AlN/GaN Schottky barrier diodes

2016 ◽  
Vol 49 (30) ◽  
pp. 305103
Author(s):  
Yong Xiang ◽  
Tongjun Yu ◽  
Cheng Ji ◽  
Yutian Cheng ◽  
Xuelin Yang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Schottky Barrier ◽  
Deep Level ◽  
Schottky Barrier Diodes

scholarly journals Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Schottky Barrier ◽  
Deep Level ◽  
Depletion Region ◽  
Intrinsic Defect ◽  
Defect State ◽  
Schottky Barrier Diodes ◽  
Defect States ◽  
State Distribution

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.

scholarly journals Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CG01 ◽  
Author(s):  
Philippe Ferrandis ◽  
Matthew Charles ◽  
Yannick Baines ◽  
Julien Buckley ◽  
Gennie Garnier ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barrier Diodes ◽  
Transient Spectroscopy ◽  
Gate Recess

Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

2021 ◽  
Author(s):  
Wei Mao ◽  
shihao Xu ◽  
Haiyong Wang ◽  
Cui Yang ◽  
ShengLei Zhao ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Surface Oxide Layer ◽  
Schottky Barrier Diodes ◽  
X Ray ◽  
Current Collapse ◽  
Effect Of Oxygen

Abstract The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device with oxygen plasma treatment has a relatively more inhomogeneous barrier height.

Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy

2011 ◽  
Vol 1309 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Yoshihiro Irokawa ◽  
Yasunobu Sumida ◽  
Shuichi Yagi ◽  
Hiroji Kawai
Keyword(s):  
Steady State ◽  
Schottky Barrier ◽  
Conduction Band ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Barrier Diodes ◽  
Current Collapse ◽  
Capacitance Voltage ◽  
Capacitance Spectroscopy

ABSTRACTWe have investigated a correlation between electronic deep levels and current collapses in AlGaN/GaN hetero-structures by capacitance-voltage and photo-capacitance spectroscopy techniques, using Schottky barrier diodes. Three specific deep levels located at ~2.07, ~2.80, ~3.23eV below the conduction band were found to be significantly enhanced for the severe current collapse. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapses of the AlGaN/GaN hetero-structures.

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

2020 ◽  
Vol 1004 ◽  
pp. 960-972
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Jana Toompuu
Keyword(s):  
Schottky Barrier ◽  
Deep Level ◽  
Numerical Study ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Diffusion Welding ◽  
Schottky Barrier Diodes ◽  
Schottky Rectifiers ◽  
Barrier Inhomogeneities ◽  
P Type

The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

Sign in / Sign up

Export Citation Format

Share Document