Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy

2011 ◽  
Vol 1309 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Yoshihiro Irokawa ◽  
Yasunobu Sumida ◽  
Shuichi Yagi ◽  
Hiroji Kawai
Keyword(s):  
Steady State ◽  
Schottky Barrier ◽  
Conduction Band ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Barrier Diodes ◽  
Current Collapse ◽  
Capacitance Voltage ◽  
Capacitance Spectroscopy

ABSTRACTWe have investigated a correlation between electronic deep levels and current collapses in AlGaN/GaN hetero-structures by capacitance-voltage and photo-capacitance spectroscopy techniques, using Schottky barrier diodes. Three specific deep levels located at ~2.07, ~2.80, ~3.23eV below the conduction band were found to be significantly enhanced for the severe current collapse. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapses of the AlGaN/GaN hetero-structures.

scholarly journals Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Schottky Barrier ◽  
Deep Level ◽  
Depletion Region ◽  
Intrinsic Defect ◽  
Defect State ◽  
Schottky Barrier Diodes ◽  
Defect States ◽  
State Distribution

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.

Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy

2009 ◽  
Vol 1202 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Keiji Nakamura ◽  
Yoshihiro Irokawa ◽  
Masaki Takeguchi
Keyword(s):  
Steady State ◽  
Optical Spectroscopy ◽  
Deep Level ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Capacitance Voltage ◽  
Dimensional Electron Gas ◽  
Gap States

AbstractPlanar Pt/AlGaN/GaN Schottky barrier diodes (SBDs) have been characterized by capacitance-voltage and capacitance deep-level optical spectroscopy measurements, compared to reference Pt/GaN:Si SBDs. Two specific deep levels are found to be located at ∼1.70 and ∼2.08 eV below the conduction band, which are clearly different from deep-level defects (Ec - 1.40, Ec - 2.64, and Ec - 2.90 eV) observed in the Pt/GaN:Si SBDs. From the diode bias dependence of the steady-state photocapacitance, these levels are believed to stem from a two-dimensional electron gas (2DEG) region at the AlGaN/GaN hetero-interface. In particular, the 1.70 eV level is likely to act as an efficient generation-recombination center of 2DEG carriers.

scholarly journals Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CG01 ◽  
Author(s):  
Philippe Ferrandis ◽  
Matthew Charles ◽  
Yannick Baines ◽  
Julien Buckley ◽  
Gennie Garnier ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barrier Diodes ◽  
Transient Spectroscopy ◽  
Gate Recess
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