Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2
2011 ◽
Vol 11
(12)
◽
pp. 10480-10484
2008 ◽
Vol 55
(8)
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pp. 2173-2180
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2010 ◽
Vol 25
(11)
◽
pp. 115003
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Keyword(s):
2016 ◽
Vol 59
◽
pp. 30-36
◽
2011 ◽
Vol 51
(3)
◽
pp. 550-555
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Keyword(s):