Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2

Author(s):  
Venkatnarayan Hariharan ◽  
Juzer Vasi ◽  
Ramgopal Rao



2011 ◽  
Vol 11 (12) ◽  
pp. 10480-10484
Author(s):  
Lining Zhang ◽  
Xingye Zhou ◽  
Yiwen Xu ◽  
Lin Chen ◽  
Wang Zhou ◽  
...  


2008 ◽  
Vol 55 (8) ◽  
pp. 2173-2180 ◽  
Author(s):  
Venkatnarayan Hariharan ◽  
Juzer Vasi ◽  
V. Ramgopal Rao


2010 ◽  
Vol 25 (11) ◽  
pp. 115003 ◽  
Author(s):  
Servin Rathi ◽  
Jyotika Jogi ◽  
Mridula Gupta ◽  
R S Gupta




2013 ◽  
Vol 89 ◽  
pp. 134-138 ◽  
Author(s):  
Ashkhen Yesayan ◽  
Fabien Prégaldiny ◽  
Jean-Michel Sallese


2011 ◽  
Vol 51 (3) ◽  
pp. 550-555 ◽  
Author(s):  
F. Djeffal ◽  
T. Bentrcia ◽  
M.A. Abdi ◽  
T. Bendib


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