Influence of grain-boundary and surface scattering on the electrical resistivity of single-layered thin copper films

1993 ◽  
Vol 5 (5) ◽  
pp. 559-566 ◽  
Author(s):  
N Artunc ◽  
Z Z Ozturk
2004 ◽  
Vol 821 ◽  
Author(s):  
Markus J. Buehler ◽  
Alexander Hartmaier ◽  
Huajian Gao

AbstractIn a recent study of diffusional creep in polycrystalline thin films deposited on substrates, we have discovered a new class of defects called the grain boundary diffusion wedges (Gao et al., Acta Mat. 47, pp. 2865-2878, 1999). These diffusion wedges are formed by stress driven mass transport between the free surface of the film and the grain boundaries during the process of substrate-constrained grain boundary diffusion. The mathematical modeling involves solution of integro-differential equations representing a strong coupling between elasticity and diffusion. The solution can be decomposed into diffusional eigenmodes reminiscent of crack-like opening displacement along the grain boundary which leads to a singular stress field at the root of the grain boundary. We find that the theoretical analysis successfully explains the difference between the mechanical behaviors of passivated and unpassivated copper films during thermal cycling on a silicon substrate. An important implication of our theoretical analysis is that dislocations with Burgers vector parallel to the interface can be nucleated at the root of the grain boundary. This is a new dislocation mechanism in thin films which contrasts to the well known Mathews-Freund-Nix mechanism of threading dislocation propagation. Recent TEM experiments at the Max Planck Institute for Metals Research have shown that, while threading dislocations dominate in passivated metal films, parallel glide dislocations begin to dominate in unpassivated copper films with thickness below 400 nm. This is consistent with our theoretical predictions. We have developed large scale molecular dynamics simulations of grain boundary diffusion wedges to clarify the nucleation mechanisms of parallel glide in thin films. Such atomic scale simulations of thin film diffusion not only show results which are consistent with both continuum theoretical and experimental studies, but also revealed the atomic processes of dislocation nucleation, climb, glide and storage in grain boundaries. The study should have far reaching implications for modeling deformation and diffusion in micro- and nanostructured materials.


1999 ◽  
Vol 581 ◽  
Author(s):  
J.L. McCrea ◽  
K.T. Aust ◽  
G. Palumbo ◽  
U. Erb

ABSTRACTThe electrical resistivity as a function of temperature (4K to 673K) of several electrodeposited nanocrystalline materials (Ni, Ni-Fe, Co) has been examined. The contribution of the grain boundaries to the electrical resistivity was quantified in terms of a specific grain boundary resistivity, which was found to be similar to previously reported values of specific grain boundary resistivity for copper and aluminum obtained from studies involving polycrystalline materials. In the high temperature range, the resistivity of the nanocrystalline samples was monitored as a function of time. The observed time dependence of the resistivity at elevated temperatures was correlated to microstructural changes in the material. The study has shown that electrical resistivity is an excellent characterization tool for nanocrystalline materials giving useful information regarding grain size and degree of thermal stability, as well as some insight into the grain growth kinetics at various temperatures.


We present measurements of the d.c. electrical resistance of three classes of pure epitaxial gold films in the thickness range 30 to 900 nm. The combination of diverse morphological techniques with temperature-dependent data from 2 to 300 K enables us to apply a new theory based on those of Mayadas and Shatzkes for grain-boundary scattering, and of Soffer for surface scattering. Gold, evaporated and annealed on mica substrates, produced (111) films which gave a mean microscopic surface roughness to Fermi wavelength ratio, r, of 0.05 and a grain-boundary reflexion coefficient, Rg, of 0.45. On KBr substrates, samples, prepared similarly, formed two distinct types of (100) film. Use of reflexion high energy electron diffraction and electron microscopy showed that the grain structure of these types of film differed; however, both gave an r of 0.1. An R g of 0.10 was determined for one type but remained unknown for the other. Our results show how previous workers, often relying on the validity of Fuchs’s theory and the misapplication thereof, have failed to present convincing evidence for specular surface scattering. We demonstrate the necessity for, experimentally, morphological observations and measurements over a wide temperature range, and, theoretically, the use of a method that combines the effects of both grain-boundary and angular-dependent surface scattering.


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