Electrical Resistivity as a Characterization Tool for Nanocrystalline Metals

1999 ◽  
Vol 581 ◽  
Author(s):  
J.L. McCrea ◽  
K.T. Aust ◽  
G. Palumbo ◽  
U. Erb

ABSTRACTThe electrical resistivity as a function of temperature (4K to 673K) of several electrodeposited nanocrystalline materials (Ni, Ni-Fe, Co) has been examined. The contribution of the grain boundaries to the electrical resistivity was quantified in terms of a specific grain boundary resistivity, which was found to be similar to previously reported values of specific grain boundary resistivity for copper and aluminum obtained from studies involving polycrystalline materials. In the high temperature range, the resistivity of the nanocrystalline samples was monitored as a function of time. The observed time dependence of the resistivity at elevated temperatures was correlated to microstructural changes in the material. The study has shown that electrical resistivity is an excellent characterization tool for nanocrystalline materials giving useful information regarding grain size and degree of thermal stability, as well as some insight into the grain growth kinetics at various temperatures.

2009 ◽  
Vol 475 (1-2) ◽  
pp. 893-897 ◽  
Author(s):  
Zheng Chen ◽  
Feng Liu ◽  
Wei Yang ◽  
Haifeng Wang ◽  
Gencang Yang ◽  
...  

2001 ◽  
Author(s):  
J. Narayan ◽  
H. Wang ◽  
A. Kvit

Abstract We have synthesized nanocrystalline thin films of Cu, Zn, TiN, and WC having uniform grain size in the range of 5 to 100 nm. This was accomplished by introducing a couple of manolayers of materials with high surface and have a weak interaction with the substrate. The hardness measurements of these well-characterized specimens with controlled microstructures show that hardness initially increases with decreasing grain size following the well-known Hall-Petch relationship (H∝d−½). However, there is a critical grain size below which the hardness decreases with decreasing grain size. The experimental evidence for this softening of nanocrystalline materials at very small grain sizes (referred as reverse Hall-Petch effect) is presented for the first time. Most of the plastic deformation in our model is envisioned to be due to a large number of small “sliding events” associated with grain boundary shear or grain boundary sliding. This grain-size dependence of hardness can be used to create functionally gradient materials for improved adhesion and wear among other improved properties.


2019 ◽  
Vol 51 (1) ◽  
pp. 513-530 ◽  
Author(s):  
Zhenbo Zhang ◽  
Éva Ódor ◽  
Diana Farkas ◽  
Bertalan Jóni ◽  
Gábor Ribárik ◽  
...  

Abstract Nanocrystalline materials reveal excellent mechanical properties but the mechanism by which they deform is still debated. X-ray line broadening indicates the presence of large heterogeneous strains even when the average grain size is smaller than 10 nm. Although the primary sources of heterogeneous strains are dislocations, their direct observation in nanocrystalline materials is challenging. In order to identify the source of heterogeneous strains in nanocrystalline materials, we prepared Pd-10 pct Au specimens by inert gas condensation and applied high-pressure torsion (HPT) up to γ ≅ 21. High-resolution transmission electron microscopy (HRTEM) and molecular dynamic (MD) simulations are used to investigate the dislocation structure in the grain interiors and in the grain boundary (GB) regions in the as-prepared and HPT-deformed specimens. Our results show that most of the GBs contain lattice dislocations with high densities. The average dislocation densities determined by HRTEM and MD simulation are in good correlation with the values provided by X-ray line profile analysis. Strain distribution determined by MD simulation is shown to follow the Krivoglaz–Wilkens strain function of dislocations. Experiments, MD simulations, and theoretical analysis all prove that the sources of strain broadening in X-ray diffraction of nanocrystalline materials are lattice dislocations in the GB region. The results are discussed in terms of misfit dislocations emanating in the GB regions reducing elastic strain compatibility. The results provide fundamental new insight for understanding the role of GBs in plastic deformation in both nanograin and coarse grain materials of any grain size.


1991 ◽  
Vol 238 ◽  
Author(s):  
A. M. El-Sherik ◽  
K. Boylan ◽  
U. Erb ◽  
G. Palumbo ◽  
K. T. Aust

ABSTRACTThe thermal stability of electrodeposited nanocrystalline Ni-1.2%P and Ni-0.12%S alloys is evaluated by in-situ electron microscopy studies. Isothermal grain size versus annealing time curves at 573K and 623K show an unexpected thermal stabilization in form of a transition from rapid initial grain growth to negligible grain growth. This behaviour is discussed in terms of the various grain boundary drag mechanisms which may be operative in these alloys.


2016 ◽  
Vol 01 (02) ◽  
pp. 1650008 ◽  
Author(s):  
Q. H. Fang ◽  
L. C. Zhang

This paper establishes a theoretical model to explore the coupled effect of grain boundary (GB) sliding deformation and crack tip dislocation emission on the critical stress intensity factor (SIF) for crack growth in ultrafine-grained and nanocrystalline materials (NCMs). The model postulates that the stress concentration near a crack tip initiates GB sliding. It is found that GB sliding leads to the formation of wedge disclination dipole at the triple junctions of grain boundaries. Under the external load and stress fields produced by wedge disclinations, dislocations are emitted from crack tips but will stop at the opposite GBs. The influence of the wedge disclination dipole and the dislocation emitted from crack tip on the critical SIF for crack growth is investigated. The model prediction shows that the critical SIF varies with the decrement of grain size, and that there is a critical grain size corresponding to a minimum value of SIF. Compared with the pure brittle fracture in NCMs at the grain sizes of tens of nanometers, the combined deformation mechanisms can bring an increase of the critical SIF for crack growth.


2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
J. Wang ◽  
A. Du ◽  
Di Yang ◽  
R. Raj ◽  
H. Conrad

The grain size dependence of the bulk resistivity of 3 mol% yttria-stabilized zirconia at 1400°C was determined from the effect of a dc electric field Ea=18.1 V/cm on grain growth and the corresponding electric current during isothermal annealing tests. Employing the brick layer model, the present annealing test results were in accordance with extrapolations of the values obtained at lower temperature employing impedance spectroscopy and 4-point-probe dc. The combined values give that the magnitude of the grain boundary resistivity ρb=133 ohm-cm. The electric field across the grain boundary width was 28–43 times the applied field for the grain size and current ranges in the present annealing test.


2019 ◽  
Vol 55 (7) ◽  
pp. 2661-2681 ◽  
Author(s):  
Sneha N. Naik ◽  
Stephen M. Walley

AbstractWe review some of the factors that influence the hardness of polycrystalline materials with grain sizes less than 1 µm. The fundamental physical mechanisms that govern the hardness of nanocrystalline materials are discussed. The recently proposed dislocation curvature model for grain size-dependent strengthening and the 60-year-old Hall–Petch relationship are compared. For grains less than 30 nm in size, there is evidence for a transition from dislocation-based plasticity to grain boundary sliding, rotation, or diffusion as the main mechanism responsible for hardness. The evidence surrounding the inverse Hall–Petch phenomenon is found to be inconclusive due to processing artefacts, grain growth effects, and errors associated with the conversion of hardness to yield strength in nanocrystalline materials.


2013 ◽  
Vol 364 ◽  
pp. 754-759 ◽  
Author(s):  
Jian Qiu Zhou ◽  
Lu Wang ◽  
Zhi Xiong Ye

A theoretical model to describe the nanovoid growth by emission dislocation shear loop in nanocrystalline metal under equal biaxial remote stress was developed. The critical stress for emission of dislocation was derived by considering the effects of surface stress. Within our description, dislocations emitted from surface of nanovoid were piled up at grain boundaries and the stress field generated by arrested dislocations can prevent further dislocation emission. The effect of grain boundary of nanocrystalline materials on nanovoid growth was investigated, and the results showed that the smaller of the grain size, the harder for the nanovoid growth.


1997 ◽  
Vol 12 (7) ◽  
pp. 1828-1836 ◽  
Author(s):  
Rachman Chaim

A physical percolating composite model is presented for description of the changes in the transport-type properties with grain size in nanocrystalline materials. The model is based on hierarchial percolation through the different microstructural components such as grain boundaries, triple lines, and quadruple nodes at grain sizes when their respective percolation thresholds are reached. The model yields critical grain sizes at which the properties may change significantly. These grain sizes depend on the grain boundary thickness. Master curves were calculated for the elastic modulus and compared to the experimental data from the literature. Better fit was found with the experimental data in comparison to Hill's approximation model. The critical grain size at grain boundary percolation threshold is suggested as a criterion for definition of materials to exhibit nanocrystalline properties.


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