Microstructure and phonon behavior in W/Si periodic multilayer structures

2021 ◽  
Author(s):  
Niranjan Kumar ◽  
Aleksey Vladimirovich Nezhdanov ◽  
Sergey Garakhin ◽  
Pavel Yunin ◽  
Vladimir N. Polkovnikov ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Crystallite Size ◽  
Amorphous Phase ◽  
Multilayer Structure ◽  
Bond Angle ◽  
Multilayer Structures ◽  
Angle Deviation ◽  
Amorphous Si

Abstract The crystallinity of the tungsten (W) phase was improved with an increase in the thickness of this layer in the periodic W/Si multilayer structure. Both the α- and β- W phases were grown simultaneously and the contribution of these phases has modified upon a change in the thickness of the W layers. For thinner W layers, the thermodynamically metastable β- W phase was dominated, and with an increase in thickness, this phase has suppressed, and the stable α- W phase became prominent. The crystallite size of these phases was almost linearly proportional to the thickness of the W layers in the multilayers. With the increase in thickness of Si layers in multilayers, Raman scattering showed a decrease in bond-angle deviation of Si-Si bonding in the amorphous Si phase. The study revealed, ordering of Si-Si bonding in the amorphous phase of Si with an increase in thickness of these layers in periodic W/Si multilayers.

scholarly journals Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

2002 ◽  
Vol 719 ◽  
Author(s):  
Ian D. Sharp ◽  
Hartmut A. Bracht ◽  
Hughes H. Silvestri ◽  
Samuel P. Nicols ◽  
Jeffrey W. Beeman ◽  
...  
Keyword(s):  
Multilayer Structure ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Processes ◽  
Quantitative Description ◽  
Multilayer Structures ◽  
Dopant Diffusion ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Boron Doped ◽  
P Type

AbstractIsotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. 30Si was used as a tracer through a multilayer structure of alternating natural Si and enriched 28Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850°C and 1100°C. A specially designed ion-implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

Raman scattering in multilayer structures with CdTe quantum dots in ZnTe

JETP Letters ◽  
2003 ◽  
Vol 77 (3) ◽  
pp. 143-145 ◽  
Author(s):  
L. K. Vodop’yanov ◽  
V. S. Vinogradov ◽  
N. N. Mel’nik ◽  
G. Karczewski
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Cdte Quantum Dots ◽  
Multilayer Structures

Mechanisms of intrinsic stresses generation in sputtered amorphous Si: H films

1995 ◽  
Vol 10 (11) ◽  
pp. 2736-2741 ◽  
Author(s):  
Hiroki Takahashi ◽  
Hirotoshi Nagata ◽  
Haruki Kataoka ◽  
Hiroshi Takai
Keyword(s):  
Compressive Stress ◽  
Volume Expansion ◽  
Bond Angle ◽  
Film Deposition ◽  
The Other ◽  
Structural Disorders ◽  
First Results ◽  
Amorphous Si ◽  
Deposition Processes ◽  
Deposition Conditions

The relation between stresses of sputtered a-Si: H films and the film deposition conditions are investigated. The film stresses change from a large compressive stress of 1000 MPa to an almost stress-free one. They arise from distortions of the Si network via the following two mechanisms. The first results from the inclusion of the Ar-sputtering gas into the films, which provides volume expansion of the film network. The other is due to structural disorders, such as a deviation of the Si bond angle which is generated during the deposition processes. Moreover, it is found that Si–H terminations in the films contribute to reducing the film stresses because the Si–H termination breaks and relaxes the Si network. These effects can be realized as long as the Si–H terminations are homogeneously distributed in the films.

Amorphous Phase Formation During Ion Mixing of Ti/Si Bilayers at Elevated Temperature

1988 ◽  
Vol 100 ◽  
Author(s):  
K. Maex ◽  
R. F. De Keersmaecker ◽  
M. Van rossum ◽  
W. F. Van Der Weg
Keyword(s):  
Elevated Temperature ◽  
Thermal Treatment ◽  
Diffusion Couple ◽  
Amorphous Phase ◽  
Phase Formation ◽  
Multilayer Structure ◽  
Elevated Temperatures ◽  
Binary Diffusion ◽  
Amorphous Phase Formation

ABSTRACTThe amorphous phaseformation in Ti-Si bilayers upon ion mixing at elevated temperatures and in Ti-Si multilayers upon thermal treatment was studied. In the case of ion mixing with 5×1015 cm−2 Xe atoms at temperatures around 240°C a 100nm thick amorphous Ti-Si alloy is formed with a very homogeneous Ti:Si=3 :4 composition. Thermal treatment of the Ti-Si multilayer structure at similar temperatures also yields amorphous silicide layers. The results are interpreted according to the evolution in a planar binary diffusion couple, where the Si and Ti concentrations in the reacted layer are dictated by thermodynamic and kinetic arguments.

Structure and Morphology Properties of Nanosized La0.75K0.05Ba0.05Sr0.15MnO3 Manganite

2020 ◽  
Vol 860 ◽  
pp. 106-111
Author(s):  
Dhawud Sabilur Razaq ◽  
Budhy Kurniawan ◽  
Ikhwan Nur Rahman ◽  
Dicky Rezky Munazat
Keyword(s):  
Bond Length ◽  
Crystallite Size ◽  
Sintering Temperature ◽  
Bond Angle ◽  
Sol Gel ◽  
Rhombohedral Structure ◽  
Phase Purity ◽  
X Ray ◽  
Structure And Morphology ◽  
Scanning Electron

Nanosized La0.75K0.05Ba0.05Sr0.15MnO3 manganite have been synthesized using sol-gel method. Afterwards, the samples were sintered at eight different temperature ranging from 650 to 1000 °C. Phase purity, crystal structure and the morphology of the sample have been examined using X-Ray Diffractometer (XRD) and Scanning Electron Microscope. It has been found that different higher sintering temperature greatly affect the phase purity and crystallite size of the sample. Regardless of the sintering temperature, all the samples crystallized in rhombohedral structure with R-3c space group. The crystallite size of the samples is found to increase from 41.59 nm up to 73.42 nm as the sintering temperature increases. Further analysis from XRD result shows that sintering temperature also affect the average Mn-O bond length and Mn-O-Mn bond angle of the sample. The average Mn-O bond length is found to increase while the average Mn-O-Mn bond angle tends to decrease as sintering temperature increases. SEM measurement shows that various grain size ranging from ~100 nm up to ~ 350 nm exists in all the sample regardless the sintering temperature.

Field dependent electroluminescence from amorphous Si/SiNx multilayer structure

2009 ◽  
Vol 94 (16) ◽  
pp. 161101 ◽  
Author(s):  
Hengping Dong ◽  
Danqing Wang ◽  
Kunji Chen ◽  
Jian Huang ◽  
Hongcheng Sun ◽  
...  
Keyword(s):  
Multilayer Structure ◽  
Field Dependent ◽  
Amorphous Si

Raman scattering in amorphous Si, Ge and III–V semiconductors

1972 ◽  
Vol 8-10 ◽  
pp. 179-184 ◽  
Author(s):  
J.E. Smith ◽  
M.H. Brodsky ◽  
B.L. Crowder ◽  
M.I. Nathan
Keyword(s):  
Raman Scattering ◽  
Amorphous Si

Optical Modulation Spectroscopy of a-Si:H Based Multilayer Structures

1986 ◽  
Vol 77 ◽  
Author(s):  
T. X. Zhou ◽  
H. Stoddart ◽  
Z. Vardeny ◽  
J. Tauc ◽  
B. Abeles
Keyword(s):  
Steady State ◽  
Temperature Dependence ◽  
Multilayer Structure ◽  
Optical Modulation ◽  
Multilayer Structures ◽  
Time Decay ◽  
Dangling Bonds ◽  
Band Tail ◽  
Modulation Spectroscopy ◽  
Modulation Spectrum

ABSTRACTSteady state optical modulation spectrum of a-Si:H/a-SiNx:H multilayer structure, its temperature dependence and time decay have been studied. For multilayers with very thin sublayers the onset of the spectrum is more gradual and occurs at higher energy than the spectrum for unlayered a-Si:H, indicating a broadening of the band tail. For larger layer thicknesses the optical modulation spectrum is compared to that for P-doped a-Si:H and interpreted as due to charged dangling bonds at the interfaces.

scholarly journals Non-equilibrium critical dynamics of low-dimensional magnetics and multilayer structures

2018 ◽  
Vol 185 ◽  
pp. 11009
Author(s):  
Pavel V. Prudnikov ◽  
Vladimir V. Prudnikov ◽  
Alena Yu. Danilova ◽  
Vadim O. Borzilov ◽  
Georgy G. Baksheev
Keyword(s):  
Critical Behavior ◽  
Multilayer Structure ◽  
Heisenberg Model ◽  
Uniaxial Anisotropy ◽  
Multilayer Structures ◽  
Critical Dynamics ◽  
Aging Effects ◽  
Magnetic Systems ◽  
Low Dimensional ◽  
Non Equilibrium

The Monte Carlo simulation of the critical behavior of multilayer structures based on anisotropic Heisenberg model is performed. The influence of the uniaxial anisotropy on the critical behavior of the thin Heisenberg-like film is described. The investigation of non-equilibrium critical behavior of multilayer structure which correspond to the nanoscale superlattice Co/Cu demonstrates that the aging effects can be observed in a wider temperature range than for bulk magnetic systems.

LOCAL DOPING AND OPTIMAL ANNEALING OF A MESH MULTILAYER STRUCTURE TO DECREASE THE SPATIAL DIMENSIONS OF INTEGRATED p–n-JUNCTIONS

NANO ◽  
2009 ◽  
Vol 04 (05) ◽  
pp. 303-323 ◽  
Author(s):  
E. L. PANKRATOV
Keyword(s):  
Integrated Circuits ◽  
Annealing Time ◽  
Multilayer Structure ◽  
Paper Analysis ◽  
Bipolar Transistor ◽  
Multilayer Structures ◽  
Dopant Distribution ◽  
Spatial Dimensions ◽  
Dopant Redistribution ◽  
Junction Rectifiers

It has been recently shown that inhomogeneity of a multilayer structure and optimization of annealing time give us the possibility to decrease the depth of p–n-junctions, which were produced in the structures. The additional to the considered effect is increasing of homogeneity of dopant distribution in enriched by the dopant area of p–n-junction. In the present paper analysis of dopant redistribution in a multilayer structures during production a series of p–n-junctions, which was produced in the multilayer structures, has been done. We consider an approach to increase the sharpness of both diffused-junction and implanted-junction rectifiers, which comprise in a bipolar transistor or thyristor, and increasing of homogeneity of dopants distributions in enriched by the dopants areas of p–n-junctions. The approach gives us possibility to increase the degree of integration of p–n-junctions, which was produced as elements of integrated circuits. Optimization of annealing time for simultaneously increasing of the sharpness and homogeneity has been done.

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