AbstractThe sample preparation procedures which enable us to observe large areas over a few tens of microns in one-dimension of semiconducting heteroepitaxial materials are described. The main principle involves the careful grinding and polishing of samples. In these procedures, another side thinning of the specimen after finishing initial side polishing is carried out using a sample platform by hand throughout all of the following steps. It is shown that for some typical examples of heteroepitaxial films general information concerning the film growth modes and structures, as well as the defect morphologies and natures introduced during growth can be effectively obtained by using the present technique.
